SEMICONDUCTORS MSS40 / MSS50 Series BACK TO BACK SCR MODULE The MSS40 / MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity. They are suitable for high power applications. The compactness of the SOT-227 package allows high power density and optimized power bus connections. Compliance to RoHS. SOT-227 MAIN FEATURES • • • IT(RMS) : 55 and 70 A VDRM/VRRM : 800 and 1200 V IGT : 50 mA 1 : Thyristor 2 Anode (A2) 2 : Thyristor 2 Gate (G2) 3 : Thyristor 1 Anode (A1) 4 : Thyristor 1 Gate (G1) MSS 40 - SCR MODULE SERIES 800 VOLTAGE : 800 : 800V 1200 : 1200V CURRENT : 40 : 55A 50 : 70A 29/10/2012 COMSET SEMICONDUCTORS 1|4 SEMICONDUCTORS MSS40 / MSS50 Series ABSOLUTE MAXIMUM RATINGS Value Symbol IT(RMS) ITSM I2t Dl/dt IGM PG(AV) Tj Tstg VRGM Ratings Unit TC = 80 °C TC = 85 °C RMS on-state current tp = 16.7ms Non repetitive surge peak on-state current tp = 20ms I2t Value for fusing tp = 10ms Critical rate of rise of onstate current F = 120Hz IG = 2xIGT, tr ≤ 100ns Peak gate current tp = 20µs Average gate power dissipation Operating junction temperature range Storage junction temperature range Maximum peak reverse gate voltage Tj = 25 °C Tj = 25 °C MSS40 MSS50 55 420 400 800 70 630 600 1800 A A A2s Tj = 125 °C 50 A/µs Tj = 125 °C Tj = 125 °C 4 1 -40 to +125 -40 to +150 5 A W °C V THERMAL CHARACTERISTICS Symbol Rth(j-c) Ratings Value MSS40 0.6 MSS50 0.45 Junction to case (AC) 29/10/2012 Unit °C/W COMSET SEMICONDUCTORS 2|4 SEMICONDUCTORS MSS40 / MSS50 Series ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Test Conditions Tj = 25 °C IDRM VDRM = VDRM Rated Tj = 125 °C Tj = 25 °C IRRM VRRM = VRRM Rated Tj = 125 °C IGT VD = 12 V, RL = 33 Ω VGT VD = 12 V, RL = 33 Ω VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA Gate open VTM ITM = 80A tp = 380 µs ITM = 100A tp = 380 µs IL IG = 1.2xIGT dV/dt VD = 67% VDRM Gate open Tj = 125 °C Vt0 Threshold voltage Tj = 125 °C Rd Dynamic resistance Tj = 125 °C 29/10/2012 Tj = 125 °C Tj = 25 °C MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 MSS40 MSS50 COMSET SEMICONDUCTORS Min Typ Max Unit - - 20 µA - - 10 mA - - 20 µA - - 10 mA 5 - 50 mA - - 1.3 V 0.2 - - V - - 80 mA - - 1.7 1.7 V - - 120 mA 1000 - - V/µs - - 0.85 V - - 11 7 mΩ 3|4 SEMICONDUCTORS MSS40 / MSS50 Series MECHANICAL DATA CASE SOT-227 Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 29/10/2012 [email protected] COMSET SEMICONDUCTORS 4|4