MMBFJ175LT1 Preferred Device JFET Chopper P−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit VDG 25 V VGS(r) −25 V Symbol Max Unit 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 3 GATE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 DRAIN PD 3 SOT−23 (TO−236) CASE 318 STYLE 10 1 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 30 − V Gate Reverse Current (VDS = 0 V, VGS = 20 V) IGSS − 1.0 nA Gate −Source Cutoff Voltage (VDS = 15, ID = 10 nA) VGS(OFF) 3.0 6.0 V Zero Gate−Voltage Drain Current (Note 2) (VGS = 0, VDS = 15 V) IDSS 7.0 60 mA Drain Cutoff Current (VDS = 15 V, VGS = 10 V) ID(off) − 1.0 nA Drain Source On Resistance (ID = 500 mA) rDS(on) − Ciss − 11 Crss − 5.5 6W M G G OFF CHARACTERISTICS Gate −Source Breakdown Voltage (VDS = 0, ID = 1.0 mA) 1 ON CHARACTERISTICS Input Capacitance Reverse Transfer Capacitance VDS = 0, VGS = 10V f = 1.0 MHz W 125 6W = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBFJ175LT1 SOT−23 3,000 / Tape & Reel MMBFJ175LT1G pF SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 3 1 Publication Order Number: MMBFJ175LT1/D MMBFJ175LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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