ON MMBFJ175LT1 Jfet chopper p-channel - depletion Datasheet

MMBFJ175LT1
Preferred Device
JFET Chopper
P−Channel − Depletion
Features
• Pb−Free Package is Available
http://onsemi.com
2 SOURCE
MAXIMUM RATINGS
Rating
Drain−Gate Voltage
Reverse Gate−Source Voltage
Symbol
Value
Unit
VDG
25
V
VGS(r)
−25
V
Symbol
Max
Unit
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
3
GATE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1 DRAIN
PD
3
SOT−23 (TO−236)
CASE 318
STYLE 10
1
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
−
V
Gate Reverse Current
(VDS = 0 V, VGS = 20 V)
IGSS
−
1.0
nA
Gate −Source Cutoff Voltage
(VDS = 15, ID = 10 nA)
VGS(OFF)
3.0
6.0
V
Zero Gate−Voltage Drain Current (Note 2)
(VGS = 0, VDS = 15 V)
IDSS
7.0
60
mA
Drain Cutoff Current
(VDS = 15 V, VGS = 10 V)
ID(off)
−
1.0
nA
Drain Source On Resistance
(ID = 500 mA)
rDS(on)
−
Ciss
−
11
Crss
−
5.5
6W M G
G
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(VDS = 0, ID = 1.0 mA)
1
ON CHARACTERISTICS
Input Capacitance
Reverse Transfer
Capacitance
VDS = 0, VGS = 10V
f = 1.0 MHz
W
125
6W = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBFJ175LT1
SOT−23
3,000 / Tape & Reel
MMBFJ175LT1G
pF
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
MMBFJ175LT1/D
MMBFJ175LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2
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MMBFJ175LT1/D
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