ETL MC74VHC1G00DFT2 2-input nand gate Datasheet

2–Input NAND Gate
MC74VHC1G00
The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is
composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G00 input
structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G00 to be
used to interface 5 V circuits to 3 V
circuits.
• High Speed: t PD = 3.0 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
MARKING DIAGRAMS
5
4
1
2
V1d
3
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
5
4
V1d
1
2
3
SOT–23/TSOP–5/SC–59
DT SUFFIX
CASE 483
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION TABLE
Inputs
PIN ASSIGNMENT
1
2
3
4
5
IN B
IN A
GND
OUT Y
V CC
A
L
L
H
H
B
L
H
L
H
Output
Y
H
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH0–1/4
MC74VHC1G00
MAXIMUM RATINGS
Symbol
V CC
V IN
V OUT
I IK
I OK
I OUT
I CC
T STG
TL
TJ
θ JA
Parameter
Value
Unit
DC Supply Voltage
– 0.5 to + 7.0
V
DC Input Voltage
– 0.5 to V CC + 0.5
V
DC Output Voltage
– 0.5 to V CC + 0.5
V
DC Input Diode Current
± 20
mA
DC Output Diode Current
± 20
mA
DC Output Sink Current
± 12.5
mA
DC Supply Current per Supply Pin
± 25
mA
Storage Temperature Range
– 65 to + 150
°C
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
Junction Temperature Under Bias
+ 150
°C
Thermal Resistance
SC–70/SC–88A (Note 1)
150
°C/W
TSOP–5
200
PD
Power Dissipation in Still Air at 85C
SC–70/SC–88A
150
mW
TSOP–5
230
MSL
Moisture Sensitivity
Level 1
Flammability Rating
Oxygen Index: 30% – 35%
UL 94 V–0 (0.125 in)
FR
V ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance
Above V CC and Below GND at 85C (Note 5)
± 500
mA
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 2–ounce copper trace with no air flow.
2. Tested to EIA/JESD22–A114–A.
3. Tested to EIA/JESD22–A115–A.
4. Tested to JESD22–C101–A.
5. Tested to EIA/JESD78.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time,
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Min
2.0
0.0
0.0
– 55
0
0
V CC = 3.3 ± 0.3 V
V CC = 5.0 ± 0.5 V
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC
DC Supply Voltage
V IN
DC Input Voltage
V OUT
DC Output Voltage
TA
Operating Temperature Range
t r ,t f
Input Rise and Fall Time
Max
5.5
5.5
V CC
+ 125
100
20
Unit
V
V
V
°C
ns/V
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VH0–2/4
MC74VHC1G00
DC ELECTRICAL CHARACTERISTICS
V
Symbol
V IH
Parameter
Minimum High–Level
Test Conditions
Input Voltage
V IL
Maximum Low–Level
Input Voltage
V OH
V OL
Min
1.5
Max
Min
1.5
Max
Min
1.5
3.0
4.5
2.1
3.15
2.1
3.15
2.1
3.15
5.5
2.0
3.85
3.85
3.85
V
0.5
0.5
0.9
1.35
0.9
1.35
2.0
1.9
1.9
3.0
4.5
2.9
4.4
3.0
4.0
2.9
4.4
2.9
4.4
V IN = V IH or V IL
I OH = –4 mA
3.0
2.58
2.48
2.34
I OH = –8 mA
V IN = V IH or V IL
4.5
2.0
3.94
3.80
I OL = 50 µA
3.0
4.5
I OH = – 50 µA
Unit
V
0.9
1.35
1.9
Output Voltage
V IN = V IH or V IL
Max
0.5
5.5
2.0
V IN = V IH or V IL
Output Voltage
V IN = V IH or V IL
Typ
T A < 85°C –55°C to 125°C
(V)
2.0
3.0
4.5
Minimum High–Level
Maximum Low–Level
T A = 25°C
CC
1.65
1.65
1.65
V
3.66
0.0
0.1
0.1
0.1
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
V
V IN = V IH or V IL
I OL = 4 mA
3.0
0.36
0.44
0.52
4.5
0 to5.5
0.36
±0.1
0.44
±1.0
0.52
±1.0
µA
5.5
2.0
20
40
µA
I IN
Maximum Input
I OL = 8 mA
V IN = 5.5 V or GND
I CC
Leakage Current
Maximum Quiescent
V IN = V CC or GND
Supply Current
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns
Symbol
t PLH ,
t PHL
Parameter
Maximum
Propagation Delay,
Test Conditions
Min
T A < 85°C –55°C<TA <125°C
T A = 25°C
Typ
Max Min Max Min Max Unit
V CC = 3.3± 0.3 V C L = 15 pF
C L = 50 pF
4.5
5.6
7.9
11.4
9.5
13.0
11.0
15.1
V CC = 5.0± 0.5 V C L = 15 pF
3.0
5.5
6.5
8.0
C L = 50 pF
3.8
5.5
7.5
10
8.5
10
10.0
10
ns
Input A or B to Y
C IN
Maximum Input
pF
Capacitance
Typical @ 25°C, V CC = 5.0 V
C PD
Power Dissipation Capacitance (Note 6)
10
pF
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC . C PD is used to determine the no–
load dynamic power consumption; P D = C PD • V CC 2 • f in + I CC • V CC .
*Includes all probe and jig capacitance.
A 1–MHz square input wave is recommended
for propagation delay tests.
Figure 4. Switching Waveforms
Figure 5. Test Circuit
VH0–3/4
MC74VHC1G00
DEVICE ORDERING INFORMATION
Device Nomenclature
Device Order
Number
Logic
Temp
Circuit
Range
Technology
Indicator Identifier
Package Type
Device
Package Tape and
Function
Suffix
Reel Suffix
MC74VHC1G00DFT
MC
74
VHC1G
00
DF
T1
MC74VHC1G00DFT2
MC
74
VHC1G
00
DF
T2
MC74VHC1G00DTT1
MC
74
VHC1G
00
DT
T1
(Name/SOT#/
Common Name)
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SOT–23/TSOP–5/
SC–59
Tape and
Reel Size
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
VH0–4/4
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