NXP BC859 Pnp general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BC859; BC860
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 May 28
2004 Jan 16
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859; BC860
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
handbook, halfpage
3
3
MARKING
TYPE
NUMBER
1
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
BC859B
4B*
BC860B
4F*
BC859C
4C*
BC860C
4G*
2
1
Top view
2
MAM256
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
BC859B
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
BC859C
BC860B
BC860C
2004 Jan 16
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859; BC860
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
−
−30
V
−
−50
V
BC859
−
−30
V
BC860
−
−45
V
BC859
BC860
VCEO
MIN.
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
3
VALUE
UNIT
500
K/W
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859; BC860
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = −30 V
−
−1
−15
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−
−
−4
μA
nA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
−100
hFE
DC current gain
IC = −2 mA; VCE = −5 V;
see Figs 2 and 3
220
−
475
420
−
800
BC859B; BC860B
BC859C; BC860C
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−
−75
−300
mV
IC = −100 mA; IB = −5 mA
−
−250
−650
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA; note 1
−
−700
−
mV
IC = −100 mA; IB = −5 mA; note 1
−
−850
−
mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V; note 2
−600
−650
−750
mV
IC = −10 mA; VCE = −5 V; note 2
−
−
−820
mV
VCEsat
Cc
collector capacitance
IE = Ie = 0; VCB = −10 V; f = 1 MHz
−
4.5
−
pF
Ce
emitter capacitance
IC = Ic = 0; VEB = −500 mV; f = 1 MHz
−
10
−
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
−
MHz
F
noise figure
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 30 Hz to 15 kHz
−
−
4
dB
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
4
dB
BC859B; BC860B;
BC859C; BC860C
noise figure
BC859B; BC860B;
BC859C; BC860C
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
2004 Jan 16
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859; BC860
MBH727
400
handbook, full pagewidth
hFE
VCE = −5 V
300
200
100
0
−10−2
−10−1
−1
−10
−102
IC (mA)
−103
BC859B; BC860B.
Fig.2 DC current gain; typical values.
MBH728
600
handbook, full pagewidth
hFE
500
VCE = −5 V
400
300
200
100
0
−10−2
−10−1
−1
−10
BC859C; BC860C.
Fig.3 DC current gain; typical values.
2004 Jan 16
5
−102
IC (mA)
−103
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859; BC860
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 16
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
6
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859; BC860
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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published in this document, including without limitation
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 16
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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Printed in The Netherlands
R75/05/pp8
Date of release: 2004 Jan 16
Document order number: 9397 750 12398
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