Mitsubishi CM800HC-90R High power switching use insulated type Datasheet

< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800HC-90R






IC ················································································800A
VCES ······································································4500V
1-element in a pack
Insulated type
LPT-IGBT / Soft Recovery Diode
AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
December 2012 HVM-1065-B
Dimensions in mm
1
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
Item
VCES
Collector-emitter voltage
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Ve
Tj
Tjop
Tstg
Gate-emitter voltage
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
tpsc
Short circuit pulse width
Collector current
Emitter current
(Note 2)
Conditions
VGE = 0V, Tj = -40…+125°C
VGE = 0V, Tj = −50°C
VCE = 0V, Tj = 25°C
DC, Tc = 85°C
Pulse (Note 1)
DC
Pulse (Note 1)
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
Ratings
4500
4400
± 20
800
1600
800
1600
8300
6000
3500
−50 ~ +150
−50 ~ +125
−55 ~ +125
10
VCC = 3200V, VCE ≤ VCES, VGE =15V, Tj =125°C
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
s
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Tj = 25°C
Tj = 125°C
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
IGES
Cies
Coes
Cres
QG
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VCE = 10 V, IC = 80 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
VCEsat
Collector-emitter saturation voltage
td(on)
Turn-on delay time
tr
Turn-on rise time
Eon(10%)
Turn-on switching energy
(Note 5)
Eon
Turn-on switching energy
(Note 6)
td(off)
Turn-off delay time
tf
Turn-off fall time
Eoff(10%)
Turn-off switching energy
(Note 5)
Eoff
Turn-off switching energy
(Note 6)
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
VCC = 2800V, IC = 800A, VGE = ±15V, Tj = 25°C
IC = 800 A (Note 4)
Tj = 25°C
VGE = 15 V
Tj = 125°C
Tj = 25°C
Tj = 125°C
VCC = 2800 V
Tj = 25°C
IC = 800 A
VGE = ±15 V
Tj = 125°C
RG(on) = 4.0 Ω
Tj = 25°C
Ls = 150 nH
Tj = 125°C
Inductive load
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VCC = 2800 V
Tj = 25°C
IC = 800 A
Tj = 125°C
VGE = ±15 V
RG(off) = 15 Ω
Tj = 25°C
Ls = 150 nH
Tj = 125°C
Inductive load
Tj = 25°C
Tj = 125°C
December 2012
2
Min
—
—
5.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
10.0
6.3
—
117.0
7.3
3.3
9.0
3.50
4.40
1.00
0.95
0.28
0.30
2.90
3.55
3.10
3.80
3.60
3.80
0.35
0.45
1.95
2.55
2.15
2.85
Max
10.0
—
6.8
0.5
—
—
—
—
—
5.10
—
1.50
—
0.50
—
—
—
—
—
5.00
—
1.00
—
—
—
—
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J
J
µs
µs
J
J
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
Item
Conditions
(Note 2)
VEC
Emitter-collector voltage
trr
Reverse recovery time
(Note 2)
Irr
Reverse recovery current
(Note 2)
Qrr
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2)
Erec(10%)
Erec
(Note 5)
Reverse recovery energy
IE = 800 A (Note 4)
VGE = 0 V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VCC = 2800 V
IC = 800 A
VGE = ±15 V
RG(on) = 4.0 Ω
Ls = 150 nH
Inductive load
(Note 2)
(Note 6)
Min
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
2.50
2.80
0.70
0.90
780
850
660
1000
0.85
1.35
1.00
1.55
Max
—
3.40
—
—
—
—
—
—
—
—
—
—
Min
—
—
—
Limits
Typ
—
—
9.0
Max
15.0
28.5
—
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
—
—
Limits
Typ
—
—
—
0.9
—
—
—
16.5
0.18
2.5
Max
22.0
6.0
3.0
—
—
—
—
—
—
—
Unit
V
µs
A
µC
J
J
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to heat sink, grease = 1W/m·k, D(c-s) = 100m
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
rg
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
TC = 25°C
TC = 25°C
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
December 2012
3
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Ω
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
1600
1600
T j = 25°C
1200
VGE = 16V
VGE = 11V
VGE = 15V
800
VGE = 10V
Collector Current [A]
Collector Current [A]
1200
V CE = VGE
VGE = 13V
400
800
400
0
T j = 125°C
Tj = 25°C
0
0
2
4
6
8
0
Collector - Emitter Voltage [V]
4
8
12
16
Gate - Emitter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1600
1600
V GE = 15V
1200
Tj = 25°C
Emitter Current [A]
Collector Current [A]
1200
Tj = 125°C
800
400
Tj = 25°C
Tj = 125°C
800
400
0
0
0
2
4
6
8
0
Collector-Emitter Saturation Voltage [V]
1
2
3
4
Emitter-Collector Voltage [V]
December 2012
4
5
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
1000
V CE = 2800V, IC = 800A
Tj = 25°C
15
Gate-Emitter Voltage [V]
Capacitance [nF]
Cies
100
10
Coes
V GE = 0V, Tj = 25°C
f = 100kHz
10
5
0
-5
-10
Cres
1
-15
0.1
1
10
0
100
2
4
Collector-Emitter Voltage [V]
8
V CC = 2800V, IC = 800A
V GE = ±15V, LS = 150nH
Tj = 125°C, Inductive load
Inductive load
6
E of f
4
E rec
Switching Energies [J]
Switching Energies [J]
8
2
0
0
400
800
10
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
Eon
VCC = 2800V, VGE = ±15V
RG(on) = 4.0Ω, RG(off) = 15Ω
LS = 150nH, Tj = 125°C
8
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
10
6
1200
6
Eon
4
Erec
2
0
1600
2
Collector Current [A]
December 2012
5
4
6
Gate resistor [Ohm]
8
10
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)HALF-BRIDGE
8
100
VC C = 2800V, IC = 800A
VGE = ±15V, LS = 150nH
VCC = 2800V, VGE = ±15V
RG( on) = 4.0Ω, RG(off) = 15Ω
LS = 150nH, Tj = 125°C
Inductive load
6
10
Switching Times [µs]
Switching Energies [J]
Tj = 125°C, Inductive load
4
Eoff
2
0
10
15
20
25
td(off)
td(on)
1
tf
0.1
tr
0.01
100
30
Gate resistor [Ohm]
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
10000
2500
VCC = 2800V, VGE = ±15V
VC C  3200V, VGE = ±15V
Tj = 125°C, RG(off ) = 15Ω
1
0.1
100
trr
1000
1000
100
2000
Collector Current [A]
Irr
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
RG(on) = 4.0Ω, LS = 150nH
Tj = 125°C, Inductive load
10
10000
Collector Current [A]
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
1000
1500
1000
500
10
10000
0
0
Emitter Current [A]
1000
2000
3000
4000
Collector-Emitter Voltage [V]
December 2012
6
5000
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
10
2500
VC C  3200V, di/dt < 4kA/µs
Tj = 125°C
VCC  3200V, V GE = ±15V
Tj = 125°C, RG(on) = 4.0Ω, RG(off) = 15Ω
Reverse Recovery Current [A]
Collector Current [kA]
8
6
4
2
2000
1500
1000
500
0
0
0
1000
2000
3000
4000
5000
0
Collector-Emitter Voltage [V]
1000
2000
3000
4000
5000
Emitter-Collector Voltage [V]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c)Q = 15.0K/kW
Rth(j-c)D = 28.5K/kW
1
Z
(t ) 
th( j  c )
n
 R 1 exp
i 1
0.8
0.6
0.1
1


1
0.0096
2
0.1893
3
0.4044
4
0.3967
ti [sec] :
0.0001
0.0058
0.0602
0.3512
0.2
0.01
 t 
 


i 

Ri [K/kW] :
0.4
0
0.001


i

10
Time [s]
December 2012
7
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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December 2012
8
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