PD - 94892D
IRLML2502PbF
HEXFET® Power MOSFET
l
l
l
l
l
l
l
l
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
Halogen-Free
G 1
VDSS = 20V
3 D
S
RDS(on) = 0.045Ω
2
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Micro3™
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
4.2
3.4
33
1.25
0.8
0.01
± 12
-55 to + 150
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambient
Typ.
Max.
Units
75
100
°C/W
1
09/25/12
IRLML2502PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
Parameter
20
–––
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.01
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.035
0.045
–––
0.050
0.080
Conditions
VGS = 0V, ID = 250uA
V/°C Reference to 25°C, ID = 1.0mA
Ω
VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.6A
VGS(th)
Gate Threshold Voltage
0.60
–––
1.2
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-3.2
–––
mV/°C
S
VDS = VGS, ID = 250μA
gfs
Forward Transconductance
5.8
–––
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
25
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Qg
Total Gate Charge
–––
8.0
12
Q gs
Gate-to-Source Charge
–––
1.8
2.7
Q gd
Gate-to-Drain ("Miller") Charge
–––
1.7
2.6
VGS = 5.0V
td(on)
Turn-On Delay Time
–––
7.5
–––
VDD = 10V
tr
Rise Time
–––
10
–––
td(off)
Turn-Off Delay Time
–––
54
–––
tf
Fall Time
–––
26
–––
RD = 10Ω
Ciss
Input Capacitance
–––
740
–––
VGS = 0V
Coss
Output Capacitance
–––
90
–––
Crss
Reverse Transfer Capacitance
–––
66
–––
Min.
Typ.
Max.
IGSS
μA
nA
d
d
VDS = 10V, ID = 4.0A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
VGS = 12V
VGS = -12V
ID = 4.0A
nC
ns
pF
VDS = 10V
d
ID = 1.0A
RG = 6Ω
d
VDS = 15V
ƒ = 1.0MHz
Source-Drain Rating and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
c
–––
–––
Units
1.3
A
–––
–––
33
–––
–––
1.2
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
VSD
Diode Forward Voltage
V
TJ = 25°C, IS = 1.3A, VGS = 0V
trr
Reverse Recovery Time
–––
16
24
ns
TJ = 25°C, IF = 1.3A
Q rr
Reverse Recovery Charge
–––
8.6
13
nC
di/dt = 100A/μs
d
S
d
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t ≤ 5sec.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
2
www.irf.com
IRLML2502PbF
100
100
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
2.25V
10
20μs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
2.25V
10
1
0.1
100
VDS , Drain-to-Source Voltage (V)
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
V DS = 15V
20μs PULSE WIDTH
2.4
2.8
3.2
3.6
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
100
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
2.0
20μs PULSE WIDTH
TJ = 150 °C
4.0
ID = 4.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLML2502PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1000
800
Ciss
600
400
200
0
Coss
Crss
1
10
10
VGS , Gate-to-Source Voltage (V)
1200
VDS = 10V
8
6
4
2
0
100
ID = 4.0A
0
4
8
12
16
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
I D , Drain Current (A)
100
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.4
10us
10
100us
1ms
1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRLML2502PbF
ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
RDS(on) , Drain-to -Source Voltage ( Ω )
0.05
0.04
Id = 4.0A
0.03
0.02
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
IRLML2502PbF
0.30
VGS = 2.5V
0.20
0.10
VGS = 4.5V
0.00
0
VGS, Gate -to -Source Voltage ( V )
10
20
30
40
iD , Drain Current ( A )
Fig 11. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
VGS(th), Gate threshold Voltage (V)
1.3
1.1
0.9
0.7
ID = 50μA
ID = 250μA
0.5
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage Vs. Temperature
6
www.irf.com
IRLML2502PbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
6
5
SYMBOL
D
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
3
6
C
E
E1
1
2
0.15 [0.006] M C B A
0.10 [0.004] C
A1
5
B
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
L1
Recommended Footprint
c
L2
0.972
0.950
0.802
3X L
7
1.900
MILLIMETERS
INCHES
MIN
MAX
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MAX
0.0004 %6&
%6&
REF
BSC
0
8
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23/TO-236AB) Part Marking Information
Notes : This part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
DAT E CODE
PART NUMBER
Cu WIRE
HALOGEN FREE
LEAD FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LET T ER
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
X
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
7
IRLML2502PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2012
8
www.irf.com