RoHS BF620 BF620 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 2 3. EMITTER IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO DC current gain Collector-emitter saturation voltage J E Marking E O Test R T C E L Emitter cut-off current N O 3 C unless otherwise specified) Symbol Collector cut-off current 1 mW (Tamb=25℃) Collector current ICM: 50 mA Collector-base voltage V(BR)CBO: 300 V Operating and storage junction temperature range Transition frequency D T ,. L SOT-89 TRANSISTOR (NPN) conditions MIN TYP MAX Ic=100µA, IE=0 300 V Ic=1mA, IB=0 300 V IE=100µA, IC=0 5 V ICBO VCB=200V, IE=0 10 nA IEBO VEB=5V, IC=0 50 nA hFE(1) VCE=20V, IC=25mA VCE(sat) IC=30mA, IB=5mA 0.6 V fT VCE=10V, IC=100mA, f=100MHz 50 60 DC W WEJ ELECTRONIC CO. UNIT Http:// www.wej.cn E-mail:[email protected] MHz