WINNERJOIN BF620 Transistor (npn) Datasheet

RoHS
BF620
BF620
1. BASE
FEATURES
Power dissipation
2. COLLECTOR
PCM:
500
2
3. EMITTER
IC
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
DC current gain
Collector-emitter saturation voltage
J
E
Marking
E
O
Test
R
T
C
E
L
Emitter cut-off current
N
O
3
C
unless otherwise specified)
Symbol
Collector cut-off current
1
mW (Tamb=25℃)
Collector current
ICM:
50
mA
Collector-base voltage
V(BR)CBO:
300
V
Operating and storage junction temperature range
Transition frequency
D
T
,. L
SOT-89
TRANSISTOR (NPN)
conditions
MIN
TYP
MAX
Ic=100µA, IE=0
300
V
Ic=1mA, IB=0
300
V
IE=100µA, IC=0
5
V
ICBO
VCB=200V, IE=0
10
nA
IEBO
VEB=5V, IC=0
50
nA
hFE(1)
VCE=20V, IC=25mA
VCE(sat)
IC=30mA, IB=5mA
0.6
V
fT
VCE=10V, IC=100mA, f=100MHz
50
60
DC
W
WEJ ELECTRONIC CO.
UNIT
Http:// www.wej.cn
E-mail:[email protected]
MHz
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