AP4506GEH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 30V RDS(ON) ▼ Good Thermal Performance ID ▼ Fast Switching Performance S1 ▼ RoHS Compliant & Halogen-Free 24mΩ G1 9A P-CH BVDSS S2 G2 -30V 36mΩ RDS(ON) TO-252-4L Description ID Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. -8A D1 D2 G1 G2 S1 S2 o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter Rating N-channel Units P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage +20 +20 V 9 -8 A 7.2 -6.4 A 50 -50 A ID@TA=25℃ ID@TA=70℃ Drain Current 3 Drain Current 3 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG TJ 3.1 W Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 8 ℃/W 40 ℃/W 1 201501164 AP4506GEH-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance Test Conditions Min. Typ. 30 - - V VGS=10V, ID=6A - - 24 mΩ VGS=4.5V, ID=4A - - 32 mΩ VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 17 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA Qg Total Gate Charge ID=6A - 8.3 13 nC Qgs Gate-Source Charge VDS=24V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time VDS=15V - 5 - ns tr Rise Time ID=6A - 18 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18 - ns tf Fall Time RD=2.5Ω - 4 - ns Ciss Input Capacitance VGS=0V - 575 920 pF Coss Output Capacitance VDS=25V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Min. Typ. IS=6A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=6A, VGS=0V - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC 2 AP4506GEH-HF o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. -30 - - V VGS=-10V, ID=-5A - - 36 mΩ VGS=-4.5V, ID=-3A - - 48 mΩ VGS=0V, ID=-250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A - 12 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -10 uA Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage - - +30 uA o IGSS VGS=+20V, VDS=0V Qg Total Gate Charge ID=-5A - 12.6 20 nC Qgs Gate-Source Charge VDS=-24V - 2.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6.2 - nC td(on) Turn-on Delay Time VDS=-15V - 8 - ns tr Rise Time ID=-5A - 16 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns tf Fall Time RD=3Ω - 41 - ns Ciss Input Capacitance VGS=0V - 1045 1670 pF Coss Output Capacitance VDS=-25V - 220 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 150 - pF Min. Typ. IS=-5A, VGS=0V - - -1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-5A, VGS=0V - 23 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 15 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4506GEH-HF N-Channel 50 50 40 ID , Drain Current (A) ID , Drain Current (A) 40 30 20 10V 7.0V 5.0V 4.5V T C = 150 o C 10V 7.0V 5.0V 4.5V T C = 25 o C V G =3.0V 30 V G =3.0V 20 10 10 0 0 0 1 2 3 4 5 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 28 1.8 I D =4A T C =25 o C I D =6A V G =10V 1.6 Normalized RDS(ON) RDS(ON) (mΩ ) 26 24 22 1.4 1.2 1.0 20 0.8 0.6 18 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 IS(A) o o T j =150 C 6 Normalized VGS(th) 8 T j =25 C 4 1.2 0.8 2 0.4 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4506GEH-HF N-Channel f=1.0MHz 1000 C iss I D =6A V DS =24V 8 C (pF) VGS , Gate to Source Voltage (V) 12 C oss 100 C rss 4 0 10 0 5 10 15 20 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10 100us 1 1ms 10ms 100ms Normalized Thermal Response (R thja) ID (A) Duty factor=0.5 1s 0.1 T A =25 o C Single Pulse DC 0.01 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + Ta 0.01 Rthja=75℃ ℃ /W Single Pulse 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.01 0.1 1 10 100 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 5 AP4506GEH-HF P-Channel 50 50 T C = 25 o C 30 20 V G = - 3.0V 30 20 V G = - 3.0V 10 10 0 0 0 1 2 3 4 0 5 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.6 I D =-5A V G =-10V I D =-3A T C =25 o C 1.4 Normalized RDS(ON) 41 RDS(ON) (mΩ ) -10V -7.0V -5.0V -4.5V 40 -ID , Drain Current (A) 40 -ID , Drain Current (A) T C = 150 o C -10V -7.0V -5.0V -4.5V 37 33 1.2 1.0 0.8 29 0.6 25 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS ,Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 T j =150 o C Normalized VGS(th) 8 T j =25 o C -IS(A) 6 4 1.2 0.8 2 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4506GEH-HF P-Channel f=1.0MHz 10000 10 I D = -5A V DS = -24V 8 C iss 1000 C (pF) -VGS , Gate to Source Voltage (V) 12 6 4 C oss C rss 100 2 0 10 0 5 10 15 20 25 1 30 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thjc) 100 100us 10 -ID (A) 13 -V DS , Drain-to-Source Voltage (V) 1ms 10ms 100ms 1 1s 0.1 DC T A =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=75℃ ℃ /W 0.01 0.01 0.1 1 10 100 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.1 1 10 100 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 7 AP4506GEH-HF MARKING INFORMATION 4506GEH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 8