BCV62 PNP general-purpose double transistors Rev. 4 — 26 July 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV62 Package NPN complement NXP JEITA SOT143B - BCV61 BCV62A BCV61A BCV62B BCV61B BCV62C BCV61C 1.2 Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Matched pairs AEC-Q101 qualified Small SMD plastic package 1.3 Applications Applications with working point independent of temperature Current mirrors 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit open base - - −30 V - - −100 mA VCE = −5 V; IC = −100 μA 100 - - VCE = −5 V; IC = −2 mA 100 - 800 Per transistor VCEO collector-emitter voltage IC collector current Transistor TR1 hFE DC current gain BCV62 NXP Semiconductors PNP general-purpose double transistors Table 2. Symbol Quick reference data …continued Parameter Conditions Min Typ Max BCV62 100 - 800 BCV62A 100 - 250 BCV62B 220 - 475 BCV62C 420 - 800 Unit Transistor TR2 VCE = −5 V; IC = −2 mA DC current gain hFE 2. Pinning information Table 3. Pinning Pin Description 1 collector TR2; base TR1 and TR2 2 collector TR1 3 emitter TR1 4 emitter TR2 Simplified outline 4 3 Graphic symbol 4 TR2 1 3 TR1 2 1 2 006aaa843 3. Ordering information Table 4. Ordering information Type number BCV62 Package Name Description Version - plastic surface-mounted package; 4 leads SOT143B BCV62A BCV62B BCV62C 4. Marking Table 5. Marking codes Type number Marking code[1] BCV62 3M* BCV62A 3J* BCV62B 3K* BCV62C 3L* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BCV62 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - −30 V VCEO collector-emitter voltage open base - −30 V VEBS emitter-base voltage VCE = 0 V - −6 V IC collector current - −100 mA ICM peak collector current - −200 mA IBM peak base current - −200 mA - 250 mW Per device Ptot total power dissipation Tamb ≤ 25 °C [1] Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB). 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction in free air to ambient [1] Conditions Min Typ Max Unit - - 500 K/W Conditions Min Typ Max Unit VCB = −30 V; IE = 0 A - - −15 nA VCB = −30 V; IE = 0 A; Tj = 150 °C - - −5 μA nA [1] Device mounted on an FR4 PCB. 7. Characteristics Table 8. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Transistor TR1 ICBO IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 hFE DC current gain VCE = −5 V; IC = −100 μA 100 - - VCE = −5 V; IC = −2 mA 100 - 800 IC = −10 mA; IB = −0.5 mA - −75 −300 mV IC = −100 mA; IB = −5 mA - −250 −650 mV VCEsat BCV62 Product data sheet collector-base cut-off current collector-emitter saturation voltage All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors Table 8. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol VBEsat Parameter Conditions base-emitter saturation voltage base-emitter voltage VBE Min Typ Max Unit IC = −10 mA; IB = −0.5 mA [1] - −700 - mV IC = −100 mA; IB = −5 mA [1] - −850 - mV IC = −2 mA; VCE = −5 V [2] −600 −650 −750 mV IC = −10 mA; VCE = −5 V [2] - - −820 mV fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A - 4.5 - pF NF noise figure VCE = −5 V; IC = −200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz - - 10 dB VCB = 0 V; IE = −250 mA - - −1.5 V VCB = 0 V; IE = −10 μA −400 - - mV BCV62 100 - 800 BCV62A 100 - 250 BCV62B 220 - 475 BCV62C 420 - 800 0.7 - 1.3 0.7 - 1.3 - - −5 Transistor TR2 VEBS emitter-base voltage DC current gain hFE VCE = −5 V; IC = −2 mA Transistors TR1 and TR2 IC1/IE2 current matching IE2 = −0.5 mA; VCE1 = −5 V; Tamb ≤ 25 °C Tamb ≤ 150 °C IE2 [1] BCV62 Product data sheet emitter current 2 VCE1 = −5 V [3] mA VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] Device, without emitter resistors, mounted on an FR4 PCB. All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors mgt711 500 mgt712 −1200 VBE (mV) −1000 hFE 400 (1) (1) −800 300 (2) −600 (2) 200 (3) −400 (3) 100 −200 0 −10−2 −10−1 −1 −10 0 −10−2 −102 −103 IC (mA) VCE = −5 V −10−1 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = 150 °C BCV62A: DC current gain as a function of collector current; typical values mgt713 −104 Fig 2. BCV62A: Base-emitter voltage as a function of collector current; typical values mgt714 −1200 VBEsat (mV) −1000 VCEsat (mV) (1) (2) −800 −103 (3) −600 −400 (1) −200 (3) (2) −10 −10−1 −1 −10 −102 0 −10−1 −103 −1 IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C BCV62A: Collector-emitter saturation voltage as a function of collector current; typical values BCV62 Product data sheet −10 −102 −103 IC (mA) (1) Tamb = 150 °C Fig 3. −102 −103 IC (mA) (1) Tamb = −55 °C (3) Tamb = −55 °C −102 −10 VCE = −5 V (2) Tamb = 25 °C Fig 1. −1 Fig 4. BCV62A: Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors mgt715 1000 mgt716 −1200 VBE (mV) −1000 hFE 800 (1) −800 600 (2) (1) −600 400 200 0 −10−2 −10−1 (2) −400 (3) −200 −1 −10 (3) 0 −10−2 −102 −103 IC (mA) VCE = −5 V −10−1 −1 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 5. −10 BCV62B: DC current gain as a function of collector current; typical values mgt717 −104 Fig 6. BCV62B: Base-emitter voltage as a function of collector current; typical values mgt718 −1200 VBEsat (mV) −1000 VCEsat (mV) (1) −800 −103 (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 −102 0 −10−1 −103 −1 IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C BCV62B: Collector-emitter saturation voltage as a function of collector current; typical values BCV62 Product data sheet −102 −103 IC (mA) (1) Tamb = 150 °C Fig 7. −10 Fig 8. BCV62B: Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors mgt719 1000 mgt720 −1200 VBE (mV) −1000 hFE (1) 800 (1) −800 600 (2) (2) −600 400 −400 (3) (3) 200 −200 0 −10−2 −10−1 −1 −10 −102 −103 IC (mA) 0 −10−1 VCE = −5 V −1 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 9. −10 BCV62C: DC current gain as a function of collector current; typical values mgt721 −104 Fig 10. BCV62C: Base-emitter voltage as a function of collector current; typical values mgt722 −1200 VBEsat (mV) −1000 VCEsat (mV) (1) −800 −103 (2) −600 (3) −400 −102 (1) −200 (3) (2) −10 −10−1 −1 −10 −102 −103 0 −10−1 −1 IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C Fig 11. BCV62C: Collector-emitter saturation voltage as a function of collector current; typical values Product data sheet −102 −103 IC (mA) (1) Tamb = 150 °C BCV62 −10 Fig 12. BCV62C: Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors −30 mbk083 −VCE1max (V) IE2 = 1 mA −20 5 mA 10 mA −10 50 mA 0 10−1 1 10 102 RE (Ω) IC1/IE2 = 1.3 Fig 13. Maximum collector-emitter voltage as a function of emitter resistor (see Figure 15) 8. Test information A IC1 −VCE1 2 TR1 1 TR2 3 IE2 = constant 4 006aaa841 Fig 14. Test circuit current matching A IC1 −VCE1 2 TR1 3 RE 1 TR2 IE2 = constant 4 RE 006aac001 Fig 15. Current mirror with emitter resistors BCV62 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm 04-11-16 Fig 16. Package outline SOT143B 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BCV62 Package Description SOT143B 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 BCV62A BCV62B BCV62C [1] BCV62 Product data sheet For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors 11. Soldering 3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands 0.7 0.6 (3×) (3×) solder resist 2 solder paste 3 occupied area 0.7 0.6 Dimensions in mm 0.75 0.95 0.9 1 sot143b_fr Fig 17. Reflow soldering footprint SOT143B 4.45 2.2 1.2 (3×) 1.425 (3×) solder lands solder resist 4.6 2.575 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 sot143b_fw Fig 18. Wave soldering footprint SOT143B BCV62 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCV62 v.4 20100726 Product data sheet - BCV62_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 1 “Product profile”: amended Section 3 “Ordering information”: added Section 4 “Marking”: updated Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added Section 8 “Test information”: added Figure 16: superseded by minimized package outline drawing Section 10 “Packing information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated BCV62_3 19990408 Product specification - BCV62_CNV_2 BCV62_CNV_2 19970618 Product specification - - BCV62 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BCV62 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BCV62 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 BCV62 NXP Semiconductors PNP general-purpose double transistors 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 July 2010 Document identifier: BCV62