T PL IA N M CO *R oH S Features Applications n RoHS compliant* n Switch Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters LE AD FR EE n Telecommunications CD214B-B3xR Series Schottky Barrier Rectifier Chip Diode General Information Ro VE LEA HS RS D CO ION FRE M SA E PL R IA E NT * Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip package compatible with DO-214AA (SMB) size format. The Schottky Rectifier Diodes offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Operating Junction Temperature Range Storage Temperature Range VRRM B320R 20 B340R 40 CD214B- B360R 60 B3100R 100 Unit V IF(AV) 3 A IFSM 80 A TOPR -55 to +125 TSTG -55 to +150 °C -55 to +150 °C Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Maximum Instantaneous Forward Voltage (NOTE 1) IF = 1 A VF IF = 3 A DC Reverse Current Typical Junction Capacitance Typical Thermal Resistance (NOTE 2) IR CJ Condition or Model CD214B-B320R CD214B-B340R CD214B-B360R CD214B-B3100R CD214B-B320R CD214B-B340R CD214B-B360R CD214B-B3100R VR = VRRM VR = 4 V, f = 1.0 MHz Min. Typ. Max. Unit 0.40 0.48 0.58 0.48 0.50 0.65 0.78 0.04 180 0.70 0.85 0.50 Junction to Ambient RθJA 55 Junction to Lead RθJL 17 NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. V mA pF °C/W 3312 - 2 mm SMD Trimming Potentiometer CD214B-B3xR Series Schottky Barrier Rectifier Chip Diode 100 Forward3.0 Current Derating Curve 3.0 2.0 2.0 1.0 1.0 1.0 0 0 0 0 0 0 CD214B-B320R Resistive or CD214B-B340R Inductive Load CD214B-B320R PCB Mounted on Resistive or CD214B-B340R 5.0 x 5.0 mm Inductive Load (0.2 x 0.2 inch) PCB Mountedoron Resistive Copper Pad Areas 5.0 x 5.0 mm Inductive Load (0.2 x 0.2 70 inch) 50 Mounted 110 130 PCB on 90 Copper Padmm Areas 5.0 x 5.0 (0.2 x 0.2 Lead inch) Temperature (°C) 50 70 90 110 130 Copper Pad Areas 50 Max. Peak 100 80 Forward Surge Current CD214B-B360R CD214B-B3100R CD214B-B360R CD214B-B3100R CD214B-B320R CD214B-B340R 2.0 CD214B-B360R CD214B-B3100R 150 Lead Temperature (°C) 90 110 130 70 PeakSurge Forward Surge Current PeakPeak Forward Forward Surge Current Current (Amps) (Amps) (Amps) Average Forward Rectified Current Average Average Forward Forward Rectified Rectified Current Current (Amps) (Amps) (Amps) Performance Graphs 3.0 170 150 170 150 170 100 80 60 80 60 40 60 40 20 (JEDEC Method) 40 20 0 0 20 0 0 0 0 10 10 CD214B-B360R CD214B-B320R 1 CD214B-B340R CD214B-B320R CD214B-B340R 1 CD214B-B360R CD214B-B3100R CD214B-B3100R 1 CD214B-B3100R 0.1 0.1 0.1 0.01 Ta = 25 °C 0 0.01 0.01 0 0 0.2 0.4 0.6 0.8 1.0 Ta = 25 °C Instantaneous Forward Voltage (Volts) 0.2 0.4 0.6 0.8 Ta =1.0 25 °C Instantaneous Forward Voltage (Volts) 0.4 0.6 0.8 1.0 0.2 1.2 1.2 1.2 100 10 100 TJ = 100 °C 10 1 10 TJ = 100 °C TJ = 100 °C 1 0.1 1 0.1 0.01 0.1 TJ = 25 °C 0.01 0.001 0.010 0.001 0.001 0 0 20 40 Percent of Rated Peak 20 40 TJ = 25 °C 80 T = 25 °C J Reverse Voltage 60 80 60 Junction Capacitance Junction Junction Capacitance Capacitance (pF) (pF) (pF) 400 400 100 10 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVP-P TJ = 25 °C f = 1.0 MHz VsigT ==5025mVP-P °C J f = 1.01.0 MHz Vsig = 50 mVP-P 10 (%) 100 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (Volts) 100 100 Percent of Rated Peak Reverse Voltage (%)100 20 40 60 80 Typical Junction Capacitance 400 100 100 Number of Cycles @ 60 Hz Instantaneous Reverse Current Instantaneous Instantaneous Reverse Reverse Current Current (mA) (mA) (mA) Instantaneous Forward Instantaneous Instantaneous Forward Forward Current Current (A)Current (A) (A) CD214B-B320R 10 CD214B-B340R 100 Number of Cycles @ 60 Hz 10 Typical100Reverse Characteristics CD214B-B360R 10 100 Number of Cycles @ 60 Hz Lead Temperature (°C) 10 Typical Instantaneous Forward Characteristics 8.3 ms Single Half Sine-Wave 8.3 ms (JEDEC Method) Single Half Sine-Wave 8.3 ms SingleMethod) Half (JEDEC Sine-Wave 100 10 Reverse Voltage (Volts) 0.1 1.0 10 100 10 Reverse Voltage (Volts) Specifications are subject to change without notice. 0.1 1.0 10 100 The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Reverse inVoltage (Volts) Users should verify actual device performance their specific applications. 3312 - 2 mmSeries SMDSchottky Trimming Potentiometer CD214B-B3xR Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A A G G B D DIA. C B C D DIA. H H I I E E E E Dimension CD214B-B3 Series G 2.65 MAX. (0.104) H 3.00 MIN. (0.118) I 6.65 REF. (0.262) F F Dimension CD214B-B3 Series A 5.20 ± 0.10 (0.205 ± 0.004) B 3.60 ± 0.10 (0.142 ± 0.004) C 3.01 TYP. TYP. (0.119) D (Dia.) 0.695 ± 0.015 (0.027 ± 0.001) E 1.15 ± 0.1 (0.045 ± 0.004) F 1.10 ± 0.15 (0.043 ± 0.006) DIMENSIONS: MM (INCHES) Typical Part Marking DATE CODE: Y = LAST DIGIT OF YEAR WW = WEEK NUMBER 302 YWW DEVICE CODE: 302 = CD214B-B320R 304 = CD214B-B340R 306 = CD214B-B360R 310 = CD214B-B3100R DIMENSIONS: MM (INCHES) Environmental Specifications Moisture Sensitivity Level.................................................................1 ESD Classification (HBM)............................................................. 3B How to Order CD 214B - B 3 20 R Common Code CD = Chip Diode Package 214B = SMB/DO-214AA Compatible Model B = Schottky Barrier Series Maximum Average Forward Rectified Current 3=3A Maximum Repetitive Peak Reverse Voltage 20 = 20 V 40 = 40 V 60 = 60 V 100 = 100 V Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mmSeries SMDSchottky Trimming Potentiometer CD214B-B3xR Barrier Rectifier Chip Diode Packaging Information The product is dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D1 D P A Trailer End D2 W B ....... ....... C Device ....... ....... Leader ....... ....... ....... ....... 30 pitches W1 Start DIMENSIONS: MM (INCHES) 30 pitches Direction of Feed Item Symbol CD214B-B3 Series Carrier Width A 3.70 ± 0.10 (0.146 ± 0.004) Carrier Length B 5.40 ± 0.10 (0.213 ± 0.004) Carrier Depth C 1.65 ± 0.10 (0.065 ± 0.004) Sprocket Hole d 1.50 ± 0.10 (0.059 ± 0.004) Reel Outside Diameter D 330 ± 2.0 (12.992 ± 0.079) Reel Inner Diameter D1 50.0 MIN. (1.969) D2 13.0 ± 0.50 (0.512 ± 0.020) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 8.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.10 (0.079 ± 0.004) Feed Hole Diameter Overall Tape Thickness T Tape Width W Reel Width W1 Quantity per Reel -- Asia-Pacific: Tel: +886-2 2562-4117 Email: [email protected] Europe: Tel: +36 88 520 390 Email: [email protected] The Americas: Tel: +1-951 781-5500 Email: [email protected] www.bourns.com 0.40 MAX. (0.016) 12.00 ± 0.30 (0.472 ± 0.012) 18.7 MAX. (0.736) 5,000 01/18 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.