LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 LP8556 High-Efficiency LED Backlight Driver for Tablets Check for Samples: LP8556 FEATURES 1 • 2 • • • • • • High Efficiency DC/DC Boost Converter with Integrated 0.19Ω Power MOSFET and Three Switching Frequency Options: 312 / 625 / 1250 kHz 2.7V to 36V Boost Switch Input Voltage Range Supports Multi-cell Li-Ion Batteries (2.7V - 20V VDD Input Range) 7V to 43V Boost Switch Output Voltage Range Supports as few as 3 WLEDs in Series per Channel and as Many as 12 Configurable Channel Count (1 to 6) Up to 50 mA per Channel PWM and / or I2C Brightness Control Phase-Shift PWM Mode Reduces Audible Noise • • • • Adaptive Dimming for Higher LED Drive Optical Efficiency Programmable Edge-rate Control and Spread Spectrum Scheme Minimize Switching Noise and Improve EMI Performance LED Fault (short/open) Detection, UVLO, TSD, OCP and OVP (up to 6 Threshold Options) Available in Tiny 20-bump, 1.715 mm x 2.376 mm x 0.6 mm, 0.4 mm pitch, DSBGA Package, and 24-pad, 4 mm x 4 mm x 0.8 mm, 0.5 mm Pitch, WQFN Package. APPLICATIONS • Tablet LCD Display LED Backlight DESCRIPTION LP8556 is a white LED driver featuring an asynchronous boost converter and six high precision current sinks that can be controlled by a PWM signal or an I2C master. The boost converter uses adaptive output voltage control for setting the optimal LED driver voltages as low as 7V and as high as 43V. This feature minimizes the power consumption by adjusting the output voltage to the lowest sufficient level under all conditions. The converter can operate at three switching frequencies: 312, 625 and 1250 kHz settable with an external resistor or pre-configured via EPROM. Programmable slew rate control and spread spectrum scheme minimize switching noise and improve EMI performance. LED current sinks can be set with the PWM dimming resolution of up to 15 bits. Proprietary adaptive dimming mode allows higher system power saving. In addition, phase shifted LED PWM dimming allows reduced audible noise and smaller boost output capacitors. The LP8556 has a full set of safety features that ensure robust operation of the device and external components. The set consists of input under-voltage lockout, thermal shutdown, over-current protection, up to 6 levels of overvoltage protection, LED open and short detection. The LP8556 operates over the ambient temperature range of -30°C to +85°C. It is available in space saving 20bump DSBGA and 24-pad WQFN packages. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Typical Application 7V ± 43V 2.7V - 20V L1 D1 1.1 ” 9OUT / VIN ” 15 VOUT VIN CIN COUT VDD EN / VDDIO 1.62V ± 3.6V SW EN / VDDIO VBOOST CVLDO VLDO LED1 RFSET FSET LED2 RISET ISET LP8556 LED3 Optional LED4 LED5 PWM LED6 SDA MCU SCL GNDs Typical Application (2) 7V ± 43V L1 2.7V - 36V D1 1.1 ” 9OUT / VIN ” 15 VOUT VIN CIN 2.7V ± 20V VDD COUT SW VDD CVDD VBOOST EN / VDDIO 1.62V ± 3.6V EN / VDDIO LED1 CVLDO VLDO LED2 RFSET FSET RISET LP8556 LED3 ISET LED4 Optional LED5 PWM MCU SCL 2 LED6 SDA GNDs Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 Recommended Inductance for the Boost Power Stage Assumes 20 mA as the maximum LED current per string and 3.3V as the maximum LED forward voltage. Number of LED Strings Number of LEDs per Boost Input Voltage String Range [V] L1 Inductance [μH] fSW = 1250 kHz fSW = 625 kHz 2.7V - 4.4V 3.3 μH - 6.8 μH 6.8 μH - 15 μH 10 μH - 33 μH 5.4V - 8.8V 10 μH - 22 μH 22 μH - 47 μH 47 μH - 100 μH 2.7V - 4.4V 4.7 μH - 10 μH 10 μH - 15 μH 22 μH - 33 μH 5.4V - 8.8V 10 μH - 22 μH 22 μH - 68 μH 47 μH - 100 μH 6 6 6 8 4 10 5.4V - 8.8V 6.8 μH - 22 μH 22 μH - 47 μH 47 μH - 100 μH 4 12 5.4V - 8.8V 10 μH - 22 μH 22 μH - 47 μH 33 μH - 100 μH Recommended Capacitances for the Boost and LDO Power Stages (1) fSW = 312 kHz (1) Switching Frequency [kHz] CIN [μF] COUT [μF] CVLDO [μF] 1250 2.2 4.7 10 625 2.2 4.7 10 312 4.7 10 10 Capacitance of Multi Layer Ceramic Capacitors (MLCC) can change significantly with the applied DC voltage. Use capacitors with good capacitance vs. DC bias characteristics. In general, MLCC in bigger packages have lower capacitance de-rating than physically smaller capacitors. Connection Diagrams (DSBGA) 1 2 3 4 4 3 2 1 A SW GND SW SDA SCL SCL SDA GND SW SW A B SW GND SW PWM EN VDDIO EN VDDIO PWM GND SW SW B C VDD VBOOST FSET LED3 LED3 FSET VBOOST VDD C D VLDO ISET GND LED2 LED2 GND ISET VLDO D E LED6 LED5 LED4 LED1 LED1 LED4 LED5 LED6 E Figure 1. 20-bump DSBGA Package – Top View See Package Number YFQ0020 Figure 2. Bottom View Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 3 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com 1 1 2 3 4 5 6 24 7 EN / VDDIO ISET 23 8 NC PWM 9 22 VDD VDD 22 9 PWM GND 10 21 FSET FSET 21 10 GND GND 11 20 VBOOST VBOOST 20 11 GND VLDO 19 12 LED1 14 15 16 17 18 GND LED4 LED5 LED6 VLDO 18 LED6 13 LED3 19 LED2 12 Figure 3. 24–pin WQFN Package – Top View See Package Number RTW0024A Submit Documentation Feedback 17 16 15 14 13 LED2 GND ISET GND GND 23 LED3 24 8 LED4 7 NC LED5 EN/VDDIO LED1 4 SCL SW 2 SDA SW 3 GND_SW GND_SW 4 GND_SW GND_SW 5 PIN 1 ID SW SDA 6 PIN 1 ID SW SCL Connection Diagrams (WQFN) Figure 4. Bottom View Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 PIN DESCRIPTIONS (1) Name Type (1) uSMD WQFN Description A1, B1 1, 2 SW A A connection to the drain terminal of the integrated power MOSFET. A2, B2 3, 4 GND_SW G A connection to the source terminal of the integrated power MOSFET. A3 5 SDA I/O I2C data input/output pin. A4 6 SCL I I2C clock input pin. B3 9 PWM I PWM dimming input. Supply a 75 Hz to 25 kHz PWM signal to control dimming. This pin must be connected to GND if unused. B4 7 EN / VDDIO P Dual purpose pin serving both as a Chip enable and as a power supply reference for PWM, SDA and SCL inputs. Drive this pin with a logic gate capable of sourcing a minimum of 1 mA. C1 22 VDD P Device power supply pin. Provide 2.7V to 20V supply to this pin. This pin is an input of the internal LDO regulator. The output of the internal LDO is what powers the device. C2 20 VBOOST A Boost converter output pin. The internal Feedback (FB) and Overvoltage Protection (OVP) circuitry monitors the voltage on this pin. Connect the converter output capacitor bank close to this pin. C3 21 FSET A A connection for setting the boost frequency and PWM output dimming frequency by using an external resistor. Connect a resistor, RFSET, between this pin and the ground reference (See Table 5). This pin may be left floating if PWM_FSET_EN=0 AND BOOST_FSET_EN=0 (See Table 9). C4 14 LED3 A LED driver - current sink terminal. If unused, it may be left floating. D1 19 VLDO P Internal LDO output pin. Connect a capacitor, CVLDO, between this pin and the ground reference. D2 23 ISET A A connection for the LED current set resistor. Connect a resistor, RISET, between this pin and the ground reference. This pin may be left floating if ISET_EN=0 (See Table 9). D3 10, 11, 15, 24, DAP GND I Ground pin. D4 13 LED2 A LED driver - current sink terminal. If unused, it may be left floating. E1 18 LED6 A LED driver - current sink terminal. If unused, it may be left floating. E2 17 LED5 A LED driver - current sink terminal. If unused, it may be left floating. E3 16 LED4 A LED driver - current sink terminal. If unused, it may be left floating. E4 12 LED1 A LED driver - current sink terminal. If unused, it may be left floating. 8 NC - No Connect pin. A: Analog Pin, G: Ground Pin, P: Power Pin, I: Digital Input Pin, I/O: Digital Input/Output Pin These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 5 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Absolute Maximum Ratings (1) (2) Min Max Units VDD -0.3 24 V Voltage on Logic Pins (SCL, SDA, PWM) -0.3 6 V Voltage on Analog Pins (VLDO, EN / VDDIO) -0.3 6 V Voltage on Analog Pins (FSET, ISET) -0.3 VLDO+0.3 V V (LED1...LED6,SW, VBOOST ) -0.3 50 V 125 °C 150 °C Junction Temperature (TJ-MAX) (3) Storage Temperature Range -65 Maximum Lead Temperature (Soldering) 260 °C HBM (4) 2 kV CDM (5) 500 V (1) (2) (3) (4) (5) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be de-rated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125 °C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX). Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Field Induced Charge Device Model, applicable std. JESD22-C101-C Operating Ratings (1) (2) Min Max Units VDD Range 2.7 20 V EN / VDDIO Range 1.62 3.6 V V (LED1...LED6, SW, VBOOST) 0 48 V Junction Temperature Range (TJ) -30 125 °C Ambient Temperature Range (TA) -30 85 °C (1) (2) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. All voltages are with respect to the potential at the GND pins. Thermal Properties (1) Min Max Units Junction-to-Ambient Thermal Resistance (θJA), TMD Package 40 73 °C/W Junction-to-Ambient Thermal Resistance (θJA), SQA Package 35 50 °C/W (1) 6 Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 Electrical Characteristics (1) (2) Limits in standard typeface are for TA = 25 °C. Limits in boldface type apply over the full operating ambient temperature range (-30 °C ≤ TA ≤ +85 °C). Unless otherwise specified: VDD=12V, EN / VDDIO = 1.8V Symbol Parameter VDDIO Supply voltage for digital I/Os VDD Input voltage for the internal LDO Standby Supply Current IDD Normal Mode Supply Current fOSC Internal Oscillator Frequency Accuracy VLDO LDO Output Voltage TTSD Thermal Shutdown Threshold TTSD_hyst Thermal Shutdown Hysteresis Condition Min 2.7 EN / VDDIO=0V, LDO disabled (3) Max Units 3.6 V 20 V 1.6 μA LDO enabled, Boost disabled 0.9 1.5 LDO enabled, Boost enabled, no load 2.2 3.65 -4 -7 VDD ≥ 3.1V (1) (2) Typ 1.62 2.95 2.7V ≤ VDD < 3.1V See (3) mA +4 +7 3.05 % 3.15 VDD 0.05 V 150 °C 20 °C All voltages are with respect to the potential at the GND pins. Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Guaranteed by design and not tested in production. Boost Converter Electrical Characteristics (1) Symbol Parameter Condition RDS_ON Switch ON resistance ISW = 0.5A VBOOST_MIN Boost minimum output voltage VBOOST_RANGE = 0 VBOOST_RANGE = 1 VBOOST_MAX ILOAD_MAX Boost maximum output voltage Maximum continuous output load current Max Units 0.19 Ω 7 16 V = 100, = 101, = 110, = 111, VBOOST_RANGE VBOOST_RANGE VBOOST_RANGE VBOOST_RANGE =0 =0 =0 =0 19.0 24.0 28.0 32 21 25 30 34 22 27 32 37 V VBOOST_MAX VBOOST_MAX VBOOST_MAX VBOOST_MAX VBOOST_MAX VBOOST_MAX = 010, = 011, = 100, = 101, = 110, = 111, VBOOST_RANGE VBOOST_RANGE VBOOST_RANGE VBOOST_RANGE VBOOST_RANGE VBOOST_RANGE =1 =1 =1 =1 =1 =1 17.9 22.8 27.8 32.7 37.2 41.8 21 25 30 34.5 39 43 23.1 27.2 31.5 36.6 40.8 44.2 V VIN = 3V, VOUT = 18V 220 VIN = 3V, VOUT = 24V 160 VIN = 3V, VOUT = 30V 120 mA fSW = 625 kHz 15 fSW = 1250 kHz 12 Conversion ratio (2) fSW Switching frequency BOOST_FREQ = 00 BOOST_FREQ = 01 BOOST_FREQ = 10 VOVP Over-voltage protection voltage VBOOST_RANGE = 1 VUVLO VIN under-voltage lockout threshold VUVLO_hyst tPULSE (2) Typ VBOOST_MAX VBOOST_MAX VBOOST_MAX VBOOST_MAX VOUT/VIN (1) Min 312 625 1250 kHz VBOOST + 1.6V V UVLO_EN=1 UVLO_TH = 0, falling UVLO_TH = 1, falling 2.5 5.2 VUVLO hysteresis VUVLO[rising] VUVLO[falling] UVLO_TH = 0 50 UVLO_TH = 1 100 Switch minimum pulse width no load V mV 50 ns Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Guaranteed by design and not tested in production. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 7 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Boost Converter Electrical Characteristics(1) (continued) Symbol tSTARTUP ISW_LIM Parameter Condition Startup time See (3) SW pin current limit (4) IBOOST_LIM IBOOST_LIM_2X = IBOOST_LIM 0 IBOOST_LIM IBOOST_LIM Min Typ Max 8 = 00 = 01 = 10 = 11 0.66 0.88 1.12 1.35 IBOOST_LIM_2X = IBOOST_LIM = 00 1 IBOOST_LIM = 01 IBOOST_LIM = 10 0.9 1.2 1.5 1.8 Units ms 1.16 1.40 1.73 2.07 A 1.6 2.1 2.6 A ΔVSW / toff_on EN_DRV3 = 0 AND EN_DRV2 = 0 SW pin slew rate during OFF EN_DRV3 = 0 AND EN_DRV2 = 1 to ON transition EN_DRV3 = 1 AND EN_DRV2 = 1 3.7 5.3 7.5 V / ns ΔVSW / ton_off SW pin slew rate during ON to OFF transition EN_DRV3 = 0 AND EN_DRV2 = 0 EN_DRV3 = 0 AND EN_DRV2 = 1 EN_DRV3 = 1 AND EN_DRV2 = 1 1.9 4.4 4.8 V / ns ΔtON / tSW Peak to peak switch ON time deviation to SW period ratio SSCLK_EN = 1 (Spread spectrum feature) 1 % (3) (4) Startup time is measured from the moment boost is activated until the VBOOST crosses 90% of its target value. 1.8A is the maximum ISW_LIM supported with the DSBGA package. For applications requiring the ISW_LIM to be greater than 1.8A and up to 2.6A, WQFN package should be considered. LED Driver Electrical Characteristics (1) Symbol Parameter Condition ILED_LEAKAGE Leakage current ILED_MAX Maximum Sink Current LED1...LED6 ILED LED Current Accuracy (2) Output current set to 23 mA IMATCH Matching Output current set to 23 mA PWMDUTY LED PWM output pulse duty cycle (3) Min Outputs LED1...LED6, VOUT = 48V Typ Max Units 0.1 1 μA 50 -3 -4 1 mA +3 +4 0.5 % % 100 Hz < fPWM ≤ 200 Hz 0.02 100 200 Hz < fPWM ≤ 500 Hz 0.02 100 500 Hz < fPWM ≤ 1 kHz 0.02 100 1 kHz < fPWM ≤ 2 kHz 0.04 100 2 kHz < fPWM ≤ 5 kHz 0.1 100 5 kHz < fPWM ≤ 10 kHz 0.2 100 10 kHz < fPWM ≤ 20 kHz 0.4 100 20 kHz < fPWM ≤ 30 kHz 0.6 100 30 kHz < fPWM ≤ 39 kHz 0.8 100 % fLED PWM output frequency PWM_FREQ = 1111 38.5 kHz VSAT Saturation Voltage (4) Output current set to 23 mA 200 mV (1) (2) (3) (4) 8 Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Output Current Accuracy is the difference between the actual value of the output current and programmed value of this current. Matching is the maximum difference from the average. For the constant current sinks on the part (OUT1 to OUT6), the following are determined: the maximum output current (MAX), the minimum output current (MIN), and the average output current of all outputs (AVG). Two matching numbers are calculated: (MAX-AVG)/AVG and (AVG-MIN/AVG). The largest number of the two (worst case) is considered the matching figure. The typical specification provided is the most likely norm of the matching figure for all parts. Note that some manufacturers have different definitions in use. Guaranteed by design and not tested in production. Saturation voltage is defined as the voltage when the LED current has dropped 10% from the value measured at 1V. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 PWM Interface Characteristics (1) Symbol Parameter Condition Min Typ Max Units 25000 Hz fPWM PWM Frequency Range (2) tMIN_ON Minimum Pulse ON time 1 tMIN_OFF Minimum Pulse OFF time 1 tSTARTUP Turn on delay from standby to backlight on PWM input active, VDDIO pin transitions from 0V to 1.8V. 10 ms tSTBY Turn off delay PWM input low time for turn off 50 ms PWMRES PWM Input Resolution fIN < 9.0 kHz 8 bits (1) (2) 75 μs Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Guaranteed by design and not tested in production. Logic Interface Characteristics (1) Symbol Parameter Condition Min Typ Max Units 0.3 X VDDIO V Logic Inputs (PWM, SDA, SCL) VIL Input Low Level VIH Input High Level II Input Current 0.7 X VDDIO (VDDIO = 0V or 3.6V) AND (VI = 0V or 3.6V) V -1.0 1.0 μA Logic Outputs (SDA) VOL Output Low Level IOUT = 3 mA (pull-up current) IL Output Leakage Current VOUT = 5V (1) 0.3 -1.0 0.4 V 1.0 μA Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 9 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com I2C Serial Bus Timing Parameters (SDA, SCL) (1) Symbol Limit Parameter Min Max fSCL Clock Frequency 1 Hold Time (repeated) START Condition 0.6 μs 2 Clock Low Time 1.3 μs 3 Clock High Time 600 ns 4 Setup Time for a Repeated START Condition 600 ns 5 Data Hold Time 50 ns 6 Data Setup Time 100 7 Rise Time of SDA and SCL 20+0.1Cb 300 ns 8 Fall Time of SDA and SCL 15+0.1Cb 300 ns 9 Set-up Time for STOP condition 600 ns 10 Bus Free Time between a STOP and a START Condition 1.3 μs Cb (1) 400 Units Capacitive Load Parameter for Each Bus Line Load of 1 pF corresponds to 1 ns. 10 kHz ns 200 ns Guaranteed by design and not tested in production. Figure 5. I2C Compatible Timing 10 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 Typical Performance Characteristics Unless otherwise specified: VIN = 3.8V, CVLDO = 10 μF, L1 = 4.7 μH, CIN = 2.2 μF, COUT = 4.7 μF, fSW = 1.25 MHz Boost and LED Drive Efficiency, VIN = 3.8V 95 Boost and LED Drive Efficiency, VIN = 6.3V 95 Boost Efficiency 85 EFFICIENCY [%] EFFICIENCY [%] 85 Boost Efficiency LED Efficiency 75 VIN = 3.8V 6x7 LED Array ILEDMAX = 20 mA/CH L = 10 PH 1.5 mm Max Height fSW = 625 kHz 65 55 LED Efficiency 75 VIN = 6.3V 6x7 LED Array ILEDMAX = 20 mA/CH L = 10 PH 1.5 mm Max Height fSW = 625 kHz 65 55 45 45 0 20 40 60 80 100 0 20 BRIGHTNESS [%] 80 100 BRIGHTNESS [%] Figure 7. Boost and LED Drive Efficiency, VIN = 8.6V Boost and LED Drive Efficiency, VIN = 12.9V 95 Boost Efficiency Boost Efficiency 85 EFFICIENCY [%] 85 EFFICIENCY [%] 60 Figure 6. 95 LED Efficiency 75 VIN = 8.6V 6x7 LED Array ILEDMAX = 20 mA/CH L = 10 PH 1.5 mm Max Height fSW = 625 kHz 65 55 LED Efficiency 75 VIN = 12.9V 6x7 LED Array ILEDMAX = 20 mA/CH L = 10 PH 1.5 mm Max Height fSW = 625 kHz 65 55 45 45 0 20 40 60 80 100 0 20 BRIGHTNESS [%] 40 60 80 100 BRIGHTNESS [%] Figure 8. Figure 9. Optical Efficiency with 10" Panel Luminance as a Function of Brightness 200 500 Adaptive Dimming Adaptive Dimming 180 400 PWM Dimming LUMINANCE [Nits] OPTICAL EFFICIENCY [Nits/W] 40 160 VIN = 3.6V 10" Panel 6x7 LED Array ILEDMAX = 23 mA/CH L = 4.7 PH 1.5 mm Max Height fSW = 1.25 MHz 140 120 PWM Dimming 300 VIN = 3.6V 10" Panel 6x7 LED Array ILEDMAX = 23 mA/CH L = 4.7 PH 1.5 mm Max Height fSW = 1.25 MHz 200 100 100 0 0 20 40 60 80 100 BRIGHTNESS [%] 0 20 40 60 80 100 BRIGHTNESS [%] Figure 10. Figure 11. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 11 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Typical Performance Characteristics (continued) Unless otherwise specified: VIN = 3.8V, CVLDO = 10 μF, L1 = 4.7 μH, CIN = 2.2 μF, COUT = 4.7 μF, fSW = 1.25 MHz Input Power as a Function of Brightness Power Savings with Adaptive Dimming When Compared to PWM Dimming 5 100 INPUT POWER [W] 4 3 2 POWER SAVINGS [mW] VIN = 3.6V 10" Panel 6x7 LED Array ILEDMAX = 23 mA/CH L = 4.7 PH 1.5 mm Max Height fSW = 1.25 MHz PWM Dimming 1 80 60 VIN = 3.6V 10" Panel 6x7 LED Array ILEDMAX = 23 mA/CH L = 4.7 PH 1.5 mm Max Height fSW = 1.25 MHz 40 20 Adaptive Dimming 0 0 0 100 200 300 400 500 0 LUMINANCE [Nits] 20 40 60 100 BRIGHTNESS [%] Figure 12. Figure 13. Steady State Operation Waveforms Start-up Waveforms VSW 20V/DIV 80 EN/VDDIO 2V/DIV IL 500 mA/DIV VSW 20V/DIV IOUT 100 mA/DIV VBOOST 20V/DIV VBOOSTac 200 mV/DIV 4 ms/DIV 1 Ps/DIV Figure 14. 12 Figure 15. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 FUNCTIONAL OVERVIEW LP8556 is a white LED driver featuring an asynchronous boost converter and six high precision current sinks that can be controlled by a PWM signal or an I2C master. The boost converter uses adaptive output voltage control for setting the optimal LED driver voltages as high as 43V. This feature minimizes the power consumption by adjusting the voltage to the lowest sufficient level under all conditions. The converter can operate at three switching frequencies: 312, 625 and 1250 kHz pre-configured via EPROM or settable via an external resistor. Programmable slew rate control and spread spectrum scheme minimize switching noise and improve EMI performance. LED current sinks can be set with the PWM dimming resolution of up to 15 bits. Proprietary adaptive dimming mode allows higher system power saving. In addition, phase shifted LED PWM dimming allows reduced audible noise and smaller boost output capacitors. The LP8556 has a full set of safety features that ensure robust operation of the device and external components. The set consists of input under-voltage lockout, thermal shutdown, over-current protection, up to six levels of over-voltage protection, LED open and short detection. Block Diagram VIN VOUT VDD SW VBOOST Boost Converter VLDO LDO Reference Voltage Thermal shutdown Switching Frequency 312, 625, 1250 kHz PWM Control BOOST_FREQ Oscillator Headroom Control POR Fault Detection (Open LED, OCP, OVP) LED Current Sinks LED1 PWM LED2 PWM Detector LED3 BRIGHTNESS EN/VDDIO LED4 CONTROL SDA LED5 2 SCL I C Slave FSET BOOST_FREQ PWM_FREQ LED6 ISET EPROM Figure 16. LP8556 Block Diagram Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 13 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Boost Converter Overview OPERATION The LP8556 boost DC/DC converter generates a 7V to approximately 43V boost output voltage from a 2.7V to 36V boost input voltage. The boost output voltage minimum, maximum value and range can be set digitally by pre-configuring EPROM memory (VBOOST_RANGE, VBOOST and VBOOST_MAX fields). The converter is a magnetic switching PWM mode DC/DC boost converter with a current limit. It uses CPM (current programmed mode) control, where the inductor current is measured and controlled with the feedback. During startup, the soft-start function reduces the peak inductor current. LP8556 has an internal 20 MHz oscillator which is used for clocking the boost. The following figure shows the boost block diagram. VBOOST SW Startup OVP Light Load R R R S R R Spread Spectrum OCP VREF Edge Rate Control + gm + VFB Osc/ ramp + - 6 Active Load Figure 17. LP8556 Boost Converter Block Diagram SETTING BOOST SWITCHING FREQUENCY The LP8556 boost converter switching frequency can be set either by an external resistor (BOOST_FSET_EN = 1 selection), RFSET, or by pre-configuring EPROM memory with the choice of boost frequency (BOOST_FREQ field). Table 1 summarizes setting of the switching frequency. Note that the RFSET is shared for setting the PWM dimming frequency in addition to setting the boost switching frequency. Setting the boost switching frequency and PWM dimming frequency using an external resistor is separately shown in Table 5. Table 1. Configuring Boost Switching Frequency via EPROM RFSET [Ω] BOOST_FSET_EN BOOST_FREQ[1:0] fSW [kHz] don't care 0 00 312 don't care 0 01 625 don't care 0 10 1250 don't care 0 11 undefined 1 don't care (1) (1) 14 (1) See Table 5 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 OUTPUT VOLTAGE CONTROL LP8556 supports two modes of controlling the Boost output voltage, Adaptive Boost Voltage Control and Manual Boost Output Control. Each of the two modes are detailed below. ADAPTIVE CONTROL: LP8556 supports a mode of output voltage control called Adaptive Boost Control mode. In this mode, the voltage at the LED pins is periodically monitored by the control loop and adaptively adjusted to the optimum value based on the comparator thresholds set using LED DRIVER_HEADROOM, LED_COMP_HYST, BOOST_STEP_UP, BOOST_STEP_DOWN fields in the EPROM. Settings under LED DRIVER_HEADROOM along with LED_COMP_HYST fields determine optimum boost voltage for a given condition. Boost voltage will be raised if the voltage measured at any of the LED strings falls below the threshold setting determined with LED DRIVER_HEADROOM field. Likewise, boost voltage will be lowered if the voltage measured at any of the LED strings is above the combined setting determined under LED DRIVER_HEADROOM and LED_COMP_HYST fields. LED_COMP_HYST field serves to fine tune the headroom voltage for a given peak LED current. The boost voltage up/down step size can be controlled with the BOOST_STEP_UP and BOOST_STEP_DN fields. The initial boost voltage is configured with the VBOOST field. This field also sets the minimum boost voltage. The VBOOST_MAX field sets the maximum boost voltage. When an LED pin is open, the monitored voltage will never have enough headroom and the adaptive mode control loop will keep raising the boost voltage. The VBOOST_MAX field allows the boost voltage to be limited to stay under the voltage rating of the external components. NOTE Only LED strings that are enabled are monitored and PS_MODE field determines which LED strings are enabled. This Adaptive mode is selected using ADAPTIVE bit set to 1 (CFGA EPROM Register) and is the recommended mode of boost control. VBOOST Driver headroom OUT1 string VF OUT6 string VF OUT5 string VF OUT4 string VF OUT3 string VF OUT2 string VF OUT1 string VF VBOOST Time Figure 18. Boost Adaptive Control Principle MANUAL CONTROL: User can control the boost output voltage with the VBOOST EPROM field when adaptive mode is not used. The following expression shows the relationship between the boost output voltage and the VBOOST field: VBOOST= VBOOST_MIN+0.42*VBOOST[dec] (1) The expression is only valid when the calculated values are between the minimum boost output voltage and the maximum boost output voltage. The minimum boost output voltage is set with the VBOOST_RANGE field. The maximum boost output voltage is set with the VBOOST_MAX EPROM field. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 15 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com EMI REDUCTION The LP8556 features two EMI reduction schemes. First scheme, Programmable Slew Rate Control, uses a combination of three drivers for boost switch. Enabling all three drivers allows boost switch on/off transition times to be the shortest. On the other hand, enabling just one driver allows boost switch on/off transition times to be the longest. The longer the transition times, the lower the switching noise on the SW terminal. It should also be noted that the shortest transition times bring the best efficiency as the switching losses are the lowest. EN_DRV2 and EN_DRV3 bits in the EPROM determine the boost switch driver configuration. Refer to the SW pin slew rate parameter listed under Boost Converter Electrical Characteristics (2) for the slew rate options. The second EMI reduction scheme is the spread spectrum scheme which deliberately spreads the frequency content of the boost switching waveform, which inherently has a narrow bandwidth, makes the switching waveform's bandwidth wider and ultimately reduces its EMI spectral density. Duty cycle D = 1 - VIN / VOUT tSW = 1/fSW Slew rate control, programmable Spread spectrum scheme, programmable pseudo random duty cycle changes minimize EMI Figure 19. Principles of EMI Reduction Schemes (2) 16 Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 Brightness Control LP8556 enables various methods of brightness control. The brightness can be controlled using an external PWM signal or the Brightness register accessible by users via an I2C interface or both. How these two input sources are selected and combined is set by the BRT_MODE EPROM bits and described in the following sections, Figure 20, and Table 2. The LP8556 can also be preconfigured via EPROM memory to allow direct and unaltered brightness control by an external PWM signal. This mode of operation is obtained by setting PWM_DIRECT EPROM bit to '1' (CFG5[7] = 1). BRT_MODE = 00 With BRT_MODE = 00, the LED output is controlled by the PWM input duty cycle. The PWM detector block measures the duty cycle at the PWM pin and uses this 16-bit value to generate an internal to the device PWM data. Before the output is generated, the PWM data goes through the PWM Curve Shaper block. Then, the data goes into the Adaptive Dimming function which determines the range of the PWM and Current control as described in OUTPUT DIMMING SCHEMES. The outcome of the Adaptive Dimming function is 12-bit Current and / or up to 6 PWM output signals. The current is then passed through the non-linear compensation block while the output PWM signals are channeled through the Dither block. BRT_MODE = 01 With BRT_MODE = 01, the PWM output is controlled by the PWM input duty cycle and the Brightness register. The PWM detector block measures the duty cycle at the PWM pin and uses this 16-bit value to generate the PWM data. Before the output is generated, the PWM data is first multiplied with BRT[7:0] register, then it goes through the PWM Curve Shaper block. Then, the data goes into the Adaptive Dimming function which determines the range of the PWM and Current control as described in OUTPUT DIMMING SCHEMES . The outcome of the Adaptive Dimming function is 12-bit Current and / or up to 6 PWM output signals. The current is then passed through the non-linear compensation block while the output PWM signals are channeled through the Dither block. BRT_MODE = 10 With BRT_MODE = 10, the PWM output is controlled only by the Brightness register. From BRT[7:0] register, the data goes through the PWM Curve Shaper block. Then, the data goes into the Adaptive Dimming function which determines the range of the PWM and Current control as described in OUTPUT DIMMING SCHEMES . The outcome of the Adaptive Dimming function is 12-bit Current and / or up to 6 PWM output signals. The current is then passed through the non-linear compensation block while the output PWM signals are channeled through the Dither block. BRT_MODE = 11 With BRT_MODE = 11, the PWM control signal path is similar to the path when BRT_MODE = 01 except that the PWM input signal is multiplied with BRT[7:0] data after the Curve Shaper block. Table 2. Brightness Control Methods Truth Table PWM_DIRECT BRT_MODE [1:0] Brightness Control Source 0 00 External PWM Signal Output ILED Form 0 01 External PWM Signal and Brightness Register (multiplied before Curve Shaper) 0 10 Brightness Register 0 11 External PWM Signal and Brightness Register (multiplied after Curve Shaper) 1 don't care External PWM Signal Adaptive. See OUTPUT DIMMING SCHEMES Same as the external PWM input Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 17 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Current_Max [2:0] BRT_MODE = 00 Current [11:0] Non-linear Compensation PWM Input PWM Detector Temp Curve Limiter Shaper CURRENT Adaptive Dimming Dither PWM Gen PWM PWM_TO_I_THRESHOLD [3:0] Current_Max [2:0] BRT_MODE = 01 Current [11:0] Brightness Non-linear Compensation PWM Input PWM Detector Temp Curve Limiter Shaper CURRENT Adaptive Dimming Dither PWM Gen PWM PWM_TO_I_THRESHOLD [3:0] Current_Max [2:0] BRT_MODE = 10 Current [11:0] Non-linear Compensation Brightness Temp Curve Limiter Shaper CURRENT Adaptive Dimming Dither PWM Gen PWM PWM_TO_I_THRESHOLD [3:0] Current_Max [2:0] BRT_MODE = 11 Current [11:0] Non-linear Compensation Brightness Temp Curve Limiter Shaper Dither PWM Input CURRENT Adaptive Dimming PWM Gen PWM PWM Detector PWM_TO_I_THRESHOLD [3:0] Figure 20. Brightness Control Signal Path Block Diagrams 18 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 OUTPUT DIMMING SCHEMES The LP8556 supports three types of output dimming control methods: PWM Control, Pure Current Control and Adaptive Dimming (Hybrid PWM & Current) Control. PWM Control PWM control is the traditional way of controlling the brightness using PWM of the outputs with a same LED current across the entire brightness range. Brightness control is achieved by varying the duty cycle proportional to the input PWM. PWM frequency is set either using an external set Resistor (RFSET) or using the PWM_FREQ EPROM field. The maximum LED current is set either using an external set Resistor ( RISET) and CURRENT and CURRENT_MAX EPROM bits or just using the CURRENT and CURRENT_MAX EPROM bits. Note that the output PWM signal is de-coupled and generated independent of the input PWM signal eliminating display flicker issues and allowing better noise immunity PWM CONTROL (PWM_TO_I_THRESHOLD = 1111b) Max current is set with CURRENT and CURRENT_MAX EPROM bits or CURRENT and CURRENT_MAX EPROM bits and RISET resistor LED CURRENT 100% 25% 50% 100% BRIGHTNESS Figure 21. PWM Only Output Dimming Scheme Pure Current Control In Pure Current Control mode, brightness control is achieved by changing the LED current proportionately from maximum value to a minimum value across the entire brightness range. Like in PWM Control mode, the maximum LED current is set either using an external set Resistor ( RISET) and CURRENT and CURRENT_MAX EPROM bits or just using the CURRENT and CURRENT_MAX EPROM bits. Current resolution in this mode is 12-bits. PURE CURRENT CONTROL (PWM_TO_I_THRESHOLD = 0000b) Max current is set with CURRENT and CURRENT_MAX EPROM bits LED CURRENT 100% or CURRENT and CURRENT_MAX EPROM bits and RISET resistor 50% 25% 25% 50% 100% BRIGHTNESS Figure 22. Pure Current / Analog Output Dimming Scheme Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 19 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Adaptive Control Adaptive dimming control combines PWM Control and Pure Current Control dimming methods. With the adaptive dimming, it is possible to achieve better optical efficiency from the LEDs compared to pure PWM control while still achieving smooth and accurate control at low brightness levels. Current resolution in this mode is 12-bits. Switch point from Current to PWM control can be set with the PWM_TO_I_THRESHOLD EPROM field from 0% to 100% of the brightness range to get good compromise between good matching of the LEDs brightness/white point at low brightness and good optical efficiency. PWM frequency is set either using an external set Resistor (RFSET) or using the PWM_FREQ EPROM bits. The maximum LED current is set either using an external set Resistor ( RISET) and CURRENT and CURRENT_MAX EPROM bits or just using the CURRENT and CURRENT_MAX EPROM bits. PWM & CURRENT CONTROL with Switch Point at 25% of ILED_MAX (PWM_TO_I_THRESHOLD = 0111b) PWM CONTROL CURRENT CONTROL LED CURRENT 100% 50% 25% Max current is set with CURRENT and CURRENT_MAX EPROM bits or CURRENT and CURRENT_MAX EPROM bits and RISET resistor 25% 50% 100% BRIGHTNESS Figure 23. Adaptive Output Dimming Scheme 20 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 SETTING FULL SCALE LED CURRENT The maximum or full scale LED current is set either using an external set Resistor ( RISET) and CURRENT and CURRENT_MAX EPROM bits or just using the CURRENT and CURRENT_MAX EPROM bits. Table 3 summarizes setting of the full scale LED current. Table 3. Setting Full Scale LED Current (1) RISET [Ω] ISET_EN CURRENT_MAX CURRENT[11:0] Full Scale ILED [mA] don't care 0 000 FFFh 5 don't care 0 001 FFFh 10 don't care 0 010 FFFh 15 don't care 0 011 FFFh 20 don't care 0 100 FFFh 23 don't care 0 101 FFFh 25 don't care 0 110 FFFh 30 don't care 0 111 FFFh 50 don't care 0 000 - 111 001h - FFFh 24k 1 000 FFFh 5 24k 1 001 FFFh 10 24k 1 010 FFFh 15 24k 1 011 FFFh 20 24k 1 100 FFFh 23 24k 1 101 FFFh 25 24k 1 110 FFFh 30 24k 1 111 FFFh 50 12k - 100k 1 000 - 111 001h - FFFh (1) (1) See CFG0 SETTING PWM DIMMING FREQUENCY LP8556 PWM dimming frequency can be set either by an external resistor, RFSET, or by pre-configuring EPROM Memory (CFG5 register, PWM_FREQ[3:0] bits). Table 4 summarizes setting of the PWM dimming frequency. Note that the RFSET is shared for setting the boost switching frequency, too. Setting the boost switching frequency and PWM dimming frequency using an external resistor is shown in Table 5. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 21 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Table 4. Configuring PWM Dimming Frequency via EPROM RFSET [kΩ] PWM_FSET_EN don't care (1) (1) 22 0 1 PWM_FREQ[3:0] fPWM [Hz] (Resolution) 0000 4808 (12-bit) 0001 6010 (11-bit) 0010 7212 (11-bit) 0011 8414 (11-bit) 0100 9616 (11-bit) 0101 12020 (10-bit) 0110 13222 (10-bit) 0111 14424 (10-bit) 1000 15626 (10-bit) 1001 16828 (10-bit) 1010 18030 (10-bit) 1011 19232 (10-bit) 1100 24040 (9-bit) 1101 28848 (9-bit) 1110 33656 (9-bit) 1111 38464 (9-bit) don't care (1) See Table 5 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 Table 5. Setting Switching and PWM Dimming Frequency with an External Resistor RFSET [kΩ] (Tolerance) fSW [kHz] fPWM [Hz] (Resolution) Floating or FSET pin pulled HIGH 1250 9616 (11-bit) 470k - 1M (±5%) 312 2402 (12-bit) 300k, 330k (±5%) 312 4808 (12-bit) 200k (±5%) 312 6010 (11-bit) 147k, 150k, 154k, 158k (±1%) 312 9616 (11-bit) 121k (±1%) 312 12020 (10-bit) 100k (±1%) 312 14424 (10-bit) 86.6k (±1%) 312 16828 (10-bit) 75.0k (±1%) 312 19232 (10-bit) 63.4k (±1%) 625 2402 (12-bit) 52.3k, 53.6k (±1%) 625 4808 (12-bit) 44.2k, 45.3k (±1%) 625 6010 (11-bit) 39.2k (±1%) 625 9616 (11-bit) 34.0k (±1%) 625 12020 (10-bit) 30.1k (±1%) 625 14424 (10-bit) 26.1k (±1%) 625 16828 (10-bit) 23.2k (±1%) 625 19232 (10-bit) 20.5k (±1%) 1250 2402 (12-bit) 18.7k (±1%) 1250 4808 (12-bit) 16.5k (±1%) 1250 6010 (11-bit) 14.7k (±1%) 1250 9616 (11-bit) 13.0k (±1%) 1250 12020 (10-bit) 11.8k (±1%) 1250 14424 (10-bit) 10.7k (±1%) 1250 16828 (10-bit) 9.76k (±1%) 1250 19232 (10-bit) FSET pin shorted to GND 1250 Same as PWM input Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 23 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com PHASE SHIFT PWM SCHEME Phase shift PWM scheme allows delaying the time when each LED driver is active. When the LED drivers are not activated simultaneously, the peak load current from the boost output is greatly decreased. This reduces the ripple seen on the boost output and allows smaller output capacitors. Reduced ripple also reduces the output ceramic capacitor audible ringing. PSPWM scheme also increases the load frequency seen on the boost output six times and therefore transfers the possible audible noise to the frequencies outside of the audible range. Description of the PSPWM mode is seen in the following diagrams. PSPWM mode is set with <PS_MODE[2:0]> bits. PS_MODE[2:0] Waveforms Phase Delay 60 degrees Connection Cycle Time 1/(fPWM) VBOOST LED1 LED2 000 LED3 1 2 3 4 5 6 5 6 LED4 LED5 LED6 6 LED strings with 60 degree phase shift. One driver for each LED string. Phase Delay 72 degrees Cycle Time 1/(fPWM) VBOOST LED1 LED2 001 1 LED3 2 3 4 LED4 LED5 5 LED strings with 72 degree phase shift. One driver for each LED string. (Driver #6 not used). 24 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 Phase Delay 90 degrees Cycle Time 1/(fPWM) VBOOST LED1 010 LED2 1 2 3 4 5 6 5 6 5 6 LED3 LED4 4 LED strings with 90 degree phase shift. One driver for each LED string. (Drivers #5 and #6 not used). VBOOST Phase Delay 120 degrees Cycle Time 1/(fPWM) LED1 011 LED2 1 2 3 4 LED3 3 LED strings with 120 degree phase shift. One driver for each LED string. (Drivers #4, #5 and #6 not used). VBOOST Phase Delay 180 degrees 100 Cycle Time 1/(fPWM) LED1 1 2 3 4 LED2 2 LED strings with 180 degree phase shift. One driver for each LED string. (Drivers #3, #4, #5 and #6 not used). Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 25 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Phase Delay 120 degrees Cycle Time 1/(fPWM) VBOOST LED1 LED2 101 LED3 1 2 3 4 5 6 5 6 5 6 LED4 LED5 LED6 3 LED strings with 120 degree phase shift. Two drivers for each LED string. (Drivers 1&2, 3&4 and 5&6 are tied and with the same phase). Phase Delay 180 degrees Cycle Time 1/(fPWM) VBOOST LED1 LED2 110 LED3 1 2 3 4 LED4 LED5 LED6 2 LED strings with 180 degree phase shift. Three divers for each LED string. (Drivers 1&2&3 and 4&5&6 are tied and with the same phase). Phase Delay 0 degrees Cycle Time 1/(fPWM) VBOOST LED1 LED2 111 LED3 1 2 3 4 LED4 LED5 LED6 1 LED string driven by all six drivers. (All drivers are tied and with the same phase). 26 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 SLOPE AND ADVANCED SLOPE Transition time between two brightness values can be programmed with EPROM bits <PWM_SLOPE[2:0]> from 0 to 500 ms. Same slope time is used for sloping up and down. With advanced slope the brightness changes can be made more pleasing to a human eye. Brightness (PWM) Sloper Input Brightness (PWM) PWM Output Time Normal slope Advanced slope Time Slope Time Figure 24. Sloper Operation DITHERING Special dithering scheme can be used during brightness changes and in steady state condition. It allows increased resolution and smaller average steps size during brightness changes. Dithering can be programmed with EPROM bits <DITHER[1:0]> from 0 to 3 bits. <STEADY_DITHER> EPROM bit sets whether the dithering is used also in steady state or only during slopes. Example below is for 1-bit dithering. E.g. for 3-bit dithering, every 8th pulse is made 1 LSB longer to increase the average value by 1/8th. PWM value 510 (10-bit) +1 LSB PWM value 510 1/2 (10-bit) PWM value 511 (10-bit) Figure 25. Example of the Dithering, 1-bit dither, 10-bit resolution Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 27 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Fault Detection LP8556 has fault detection for LED open and short conditions, UVLO, over-current and thermal shutdown. The cause for the fault can be read from status register. Reading the fault register will also reset the fault. LED FAULT DETECTION With LED fault detection, the voltages across the LED drivers are constantly monitored. Shorted or open LED strings are detected. OPEN DETECT: The logic uses the LOW comparators and the requested boost voltage to detect the OPEN condition. If the logic is asking the boost for the maximum allowed voltage and a LOW comparator is asserted, then the OPEN bit is set in the STATUS register (ADDR=02h). In normal operation, the adaptive headroom control loop raises the requested boost voltage when the LOW comparator is asserted. If it has raised it as high as it can and an LED string still needs more voltage, then it is assumed to be disconnected from the boost voltage (open or grounded). The actual boost voltage is not part of the OPEN condition decision; only the requested boost voltage and the LOW comparators. SHORT DETECT: The logic uses all three comparators (HIGH, MID and LOW) to detect the SHORT condition. When the MID and LOW comparators are de-asserted, the headroom control loop considers that string to be optimized - enough headroom, but not excessive. If at least one LED string is optimized and at least one other LED string has its HIGH comparator asserted, then the SHORT condition is detected. It is important to note that the SHORT condition requires at least two strings for detection: one in the optimized headroom zone (LOW/MID/HIGH comparators all de-asserted) and one in the excessive headroom zone (HIGH comparator asserted). Fault is cleared by reading the fault register. UNDER-VOLTAGE DETECTION LP8556 has detection for too-low VIN voltage. Threshold level for the voltage is set with EPROM register bits as shown in the following table: Table 6. UVLO Truth Table UVLO_EN UVLO_TH Threshold (V) 0 don't care OFF 1 0 2.5V 1 1 5.2V When under voltage is detected the LED outputs and the boost will shutdown and the corresponding fault bit is set in the fault register. The LEDs and the boost will start again when the voltage has increased above the threshold level. Hysteresis is implemented to threshold level to avoid continuous triggering of fault when threshold is reached. Fault is cleared by setting the EN / VDDIO pin low or by reading the fault register. OVER-CURRENT PROTECTION LP8556 has detection for too-high loading on the boost converter. When over-current fault is detected, the the boost will shutdown and the corresponding fault bit is set in the fault register. The boost will start again when the current has dropped below the OCP threshold. Fault is cleared by reading the fault register. THERMAL SHUTDOWN If the LP8556 reaches thermal shutdown temperature (150 °C ) the LED outputs and boost will shut down to protect it from damage. Device will re-activate again when temperature drops below 130 °C degrees. Fault is cleared by reading the fault register. 28 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 I2C Compatible Serial Bus Interface INTERFACE BUS OVERVIEW The I2C-compatible synchronous serial interface provides access to the programmable functions and registers on the device. This protocol uses a two-wire interface for bidirectional communications between the IC's connected to the bus. The two interface lines are the Serial Data Line (SDA) and the Serial Clock Line (SCL). These lines should be connected to a positive supply via a pull-up resistor and remain HIGH even when the bus is idle. Every device on the bus is assigned a unique address and acts as either a Master or a Slave depending on whether it generates or receives the SCL. The LP8556 can operate as an I2C slave. DATA TRANSACTIONS One data bit is transferred during each clock pulse. Data is sampled during the high state of the serial clock SCL. Consequently, throughout the clock’s high period, the data should remain stable. Any changes on the SDA line during the high state of the SCL and in the middle of a transaction, aborts the current transaction. New data should be sent during the low SCL state. This protocol permits a single data line to transfer both command/control information and data using the synchronous serial clock. SDA SCL Data Line Stable: Data Valid Change of Data Allowed Figure 26. Bit Transfer Each data transaction is composed of a Start Condition, a number of byte transfers (set by the software) and a Stop Condition to terminate the transaction. Every byte written to the SDA bus must be 8 bits long and is transferred with the most significant bit first. After each byte, an Acknowledge signal must follow. The following sections provide further details of this process. Data Output by Transmitter Transmitter Stays Off the Bus During the Acknowledgment Clock Data Output by Receiver Acknowledgment Signal From Receiver SCL 1 2 3-6 7 8 9 S Start Condition Figure 27. Start and Stop The Master device on the bus always generates the Start and Stop Conditions (control codes). After a Start Condition is generated, the bus is considered busy and it retains this status until a certain time after a Stop Condition is generated. A high-to-low transition of the data line (SDA) while the clock (SCL) is high indicates a Start Condition. A low-to-high transition of the SDA line while the SCL is high indicates a Stop Condition. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 29 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com SDA SCL S P Start Condition Stop Condition Figure 28. Start and Stop Conditions In addition to the first Start Condition, a repeated Start Condition can be generated in the middle of a transaction. This allows another device to be accessed, or a register read cycle. ACKNOWLEDGE CYCLE The Acknowledge Cycle consists of two signals: the acknowledge clock pulse the master sends with each byte transferred, and the acknowledge signal sent by the receiving device. The master generates the acknowledge clock pulse on the ninth clock pulse of the byte transfer. The transmitter releases the SDA line (permits it to go high) to allow the receiver to send the acknowledge signal. The receiver must pull down the SDA line during the acknowledge clock pulse and ensure that SDA remains low during the high period of the clock pulse, thus signaling the correct reception of the last data byte and its readiness to receive the next byte. “ACKNOWLEDGE AFTER EVERY BYTE” RULE The master generates an acknowledge clock pulse after each byte transfer. The receiver sends an acknowledge signal after every byte received. There is one exception to the “acknowledge after every byte” rule. When the master is the receiver, it must indicate to the transmitter an end of data by not-acknowledging (“negative acknowledge”) the last byte clocked out of the slave. This “negative acknowledge” still includes the acknowledge clock pulse (generated by the master), but the SDA line is not pulled down. ADDRESSING TRANSFER FORMATS Each device on the bus has a unique slave address. The LP8556 operates as a slave device with 7-bit address combined with data direction bit. Slave address is 2Ch as 7-bit or 58h for write and 59h for read in 8-bit format. Before any data is transmitted, the master transmits the the slave I.D. The slave device should send an acknowledge signal on the SDA line, once it recognizes its address. The slave address is the first seven bits after a Start Condition. The direction of the data transfer (R/W) depends on the bit sent after the slave address — the eighth bit. When the slave address is sent, each device in the system compares this slave address with its own. If there is a match, the device considers itself addressed and sends an acknowledge signal. Depending upon the state of the R/W bit (1:read, 0:write), the device acts as a transmitter or a receiver. MSB LSB ADR6 Bit7 ADR5 bit6 ADR4 bit5 ADR3 bit4 ADR2 bit3 ADR1 bit2 ADR0 bit1 x x x x x x x R/W bit0 2 I C SLAVE address (chip address) Figure 29. I2C Chip Address (0x2C) 30 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 Control Register Write Cycle • Master device generates start condition. • Master device sends slave address (7 bits) and the data direction bit (r/w = 0). • Slave device sends acknowledge signal if the slave address is correct. • Master sends control register address (8 bits). • Slave sends acknowledge signal. • Master sends data byte to be written to the addressed register. • Slave sends acknowledge signal. • If master will send further data bytes the control register address will be incremented by one after acknowledge signal. • Write cycle ends when the master creates stop condition. Control Register Read Cycle • Master device generates a start condition. • Master device sends slave address (7 bits) and the data direction bit (r/w = 0). • Slave device sends acknowledge signal if the slave address is correct. • Master sends control register address (8 bits). • Slave sends acknowledge signal. • Master device generates repeated start condition. • Master sends the slave address (7 bits) and the data direction bit (r/w = 1). • Slave sends acknowledge signal if the slave address is correct. • Slave sends data byte from addressed register. • If the master device sends acknowledge signal, the control register address will be incremented by one. Slave device sends data byte from addressed register. • Read cycle ends when the master does not generate acknowledge signal after data byte and generates stop condition. Table 7. Data Read and Write Cycles Address Mode Data Read <Start Condition> <Slave Address><r/w = 0>[Ack] <Register Addr.>[Ack] <Repeated Start Condition> <Slave Address><r/w = 1>[Ack] [Register Data]<Ack or NAck> … additional reads from subsequent register address possible <Stop Condition> Data Write <Start Condition> <Slave Address><r/w=’0’>[Ack] <Register Addr.>[Ack] <Register Data>[Ack] … additional writes to subsequent register address possible <Stop Condition> <>Data from master [ ] Data from slave Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 31 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Register Read and Write Detail Slave Address (7 bits) S '0' A Control Register Add. A (8 bits) Register Data (8 bits) A P Data transfered, byte + Ack R/W From Slave to Master A - ACKNOWLEDGE (SDA Low) S - START CONDITION From Master to Slave P - STOP CONDITION Register Write Format Figure 30. Register Write Format S Slave Address (7 bits) '0' A Control Register Add. A Sr (8 bits) Slave Address (7 bits) Data- Data (8 bits) '1' A R/W A/ P NA Data transfered, byte + Ack/NAck R/W Direction of the transfer will change at this point From Slave to Master A - ACKNOWLEDGE (SDA Low) NA - ACKNOWLEDGE (SDA High) From Master to Slave S - START CONDITION Sr - REPEATED START CONDITION P - STOP CONDITION Register Read Format Figure 31. Register Read Format Table 8. Register Map ADD R REGISTER D7 D6 D5 D4 D3 D2 D1 D0 00H Brightness Control 01H Device Control FAST 02H Status OPEN 03H ID PANEL 04H Direct Control LED 0000 0000 16H LED Enable LED_EN 0011 1111 BRT[7:0] 0000 0000 BRT_MODE SHORT VREF_OK VBOOST_ OK RESET OVP OCP TSD MFG BL_CTL 0000 0000 UVLO 0000 0000 REV 1111 1100 Table 9. EPROM Memory Map ADD R REGISTER D7 98H CFG98 IBOOST_LIM _2X 9EH CFG9E A0H CFG0 A1H CFG1 A2H CFG2 32 RESERVED D6 D5 D4 D3 RESERVED VBOOST_RA NGE D2 D1 D0 RESERVED RESERVE D HEADROOM_OFFSET CURRENT LSB PDET_STDB Y RESERVED CURRENT_MAX UVLO_EN CURRENT MSB UVLO_TH BL_ON Submit Documentation Feedback ISET_EN BOOST_FSET PWM_FSET_ _EN EN Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 Table 9. EPROM Memory Map (continued) ADD R REGISTER D7 A3H CFG3 RESERVED A4H CFG4 A5H CFG5 A6H CFG6 BOOST_FREQ A7H CFG7 RESERVED A8H CFG8 RESERVED A9H CFG9 AAH CFGA ABH CFGB ACH CFGC ADH CFGD AEH CFGE AFH CFGF D6 D5 D4 D3 SLOPE PWM_TO_I_THRESHOLD PWM_DIREC T D1 D0 FILTER PWM_INPUT_HYSTERESIS RESERVE STEADY_DIT D HER DITHER PS_MODE PWM_FREQ VBOOST EN_DRV3 EN_DRV2 RESERVED RESERVED VBOOST_MAX SSCLK_EN D2 JUMP_EN RESERV ED RESERVED IBOOST_LIM RESERVED RESERVED JUMP_THRESHOLD JUMP_VOLTAGE ADAPTIV E DRIVER_HEADROOM RESERVED RESERVED RESERVED RESERVED STEP_UP STEP_DN LED_FAULT_TH LED_COMP_HYST REVISION Register Bit Explanations BRIGHTNESS CONTROL Address 00h Reset value 0000 0000b Brightness Control register 7 6 5 4 3 2 1 0 BRT[7:0] Name Bit Access BRT 7:0 R/W Description Backlight PWM 8-bit linear control. DEVICE CONTROL Address 01h Reset value 0000 0000b Device Control register 7 6 5 4 3 FAST 2 1 BRT_MODE[1:0] Name Bit FAST 7 BRT_MODE 2:1 Access 0 BL_CTL Description Skip refresh of trim and configuration registers from EPROMs when exiting the low power STANDBY mode. 0 = read EPROMs before returning to the ACTIVE state 1 = only read EPROMs once on initial power-up. R/W Brightness source mode Figure 20 00b = PWM input only 01b = PWM input and Brightness register (combined before shaper block) 10b = Brightness register only 11b = PWM input and Brightness register (combined after shaper block) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 33 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com Device Control register BL_CTL 0 R/W Enable backlight when Brightness Register is used to control brightness ( BRT_MODE = 10 ). 0 = Backlight disabled and chip turned off 1 = Backlight enabled and chip turned on This bit has no effect when PWM pin control is selected for brightness control ( BRT_MODE = 00). In this mode the state of PWM pin enable or disables the chip. STATUS Address 02h Reset value 0000 0000b Fault register 7 6 5 4 3 2 1 0 OPEN SHORT VREF_OK VBOOST_OK OVP OCP TSD UVLO Name Bit Access OPEN 7 R Description LED open fault detection 0 = No fault 1 = LED open fault detected. The value is not latched. SHORT 6 R LED short fault detection 0 = No fault 1 = LED short fault detected. The value is not latched. VREF_OK 5 R Internal VREF node monitor status 1 = VREF voltage is OK. VBOOST_OK 4 R Boost output voltage monitor status 0 = Boost output voltage has not reached its target (VBOOST < Vtarget - 2.5V) 1 = Boost output voltage is OK. The value is not latched. OVP 3 R Overvoltage protection 0 = No fault 1 = Overvoltage condition occurred. Fault is cleared by reading the register 02h. OCP 2 R Over current protection 0 = No fault 1 = Over current detected in boost output. OCP detection block monitors the boost output and if the boost output has been too low for more than 50 ms it will generate OCP fault and disable the boost. Fault is cleared by reading the register 02h. After clearing the fault boost will startup again. TSD 1 R Thermal shutdown 0 = No fault 1 = Thermal fault generated, 150 °C reached. Boost converter and LED outputs will be disabled until the temperature has dropped down to 130 °C. Fault is cleared by reading this register. UVLO 0 R Under voltage detection 0 = No fault 1 = Under voltage detected on the VDD pin. Boost converter and LED outputs will be disabled until VDD voltage is above the UVLO threshold voltage. Threshold voltage is set with EPROM bits. Fault is cleared by reading this register. 34 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 IDENTIFICATION Address 03h Reset value 1111 1100b Identification register 7 6 5 4 PANEL 3 2 MFG[3:0] 1 0 REV[2:0] Name Bit Access PANEL 7 R Description Panel ID code MFG 6:3 R Manufacturer ID code REV 2:0 R Revision ID code DIRECT CONTROL Address 04h Reset value 0000 0000b Direct Control register 7 6 5 4 3 2 1 0 OUT[5:0] Name Bit Access OUT 5:0 R/W Description Direct control of the LED outputs 0 = Normal operation. LED output are controlled with the adaptive dimming block 1 = LED output is forced to 100% PWM. LED String Enable Address 16h Reset value 0011 1111b Temp LSB register 7 6 5 4 3 2 1 0 LED_EN[5:0] Name Bit Access LED_EN 5:0 R/W Description Bits 5:0 correspond to LED Strings 6:1 respectively. Bit value 1 = LED String Enabled Bit value 0 = LED String Disabled Note: To disable string(s), it is recommended to disable higher order string(s). For example, - for 5 String configuration, disable 6th String. - for 4 string configuration, disable 6th and 5th string. These bits are ANDed with the internal LED enable bits that are generated with the PS_MODE logic. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 35 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com EPROM Bit Explanations LP8556TM (DSBGA) Configurations and Pre-configured EPROM Settings (1) ADDRESS LP8556-E00 LP8556-E01 LP8556-E02 LP8556-E03 LP8556-E04 98h[7] 0b 0b 0b 0b 0b 0b 22h 9Eh 22h 22h 22h 24h 24h A0h FFh FFh FFh FFh FFh A1h CFh 4Fh 5Fh BFh 3Fh A2h 2Fh 20h 20h 28h 2Fh A3h 5Eh 03h 5Eh 5Eh 5Eh A4h 72h 12h 72h 72h 72h A5h 14h 0Ch 04h 14h 04h A6h 80h 80h 80h 80h 80h A7h FFh FFh FFh FFh FFh A8h 00h 00h 00h 00h 00h A9h A0h 80h 80h A0h 60h AAh 0Fh 0Fh 0Fh 0Fh 0Fh ABh 00h 00h 00h 00h 00h ACh 00h 00h 00h 00h 00h ADh 00h 00h 00h 00h 00h AEh 0Fh 0Fh 0Fh 0Fh 0Fh AFh 02h 02h 04h 02h 02h LP8556-E05 (1) LP8556-E05 is a device option with un-configured EPROM settings. This option is for users that desire programming the device by themselves. Bits 98h[7] and 9Eh[5] are always pre-configured. LP8556TM (DSBGA) Configurations and Pre-configured EPROM Settings Continued 36 ADDRESS LP8556-E06 LP8556-E07 LP8556-E08 LP8556-E09 LP8556-E10 98h[7] 0b 0b 0b 0b 0b 9Eh 22h 04h 22h 22h 24h A0h FFh FFh FFh FFh EBh A1h DBh BFh CFh CFh 3Dh A2h 2Fh 0Dh 2Fh 2Fh 2Fh A3h 02h 02h 5Eh 02h 37h A4h 72h 72h 72h 72h 77h A5h 14h 20h 24h 04h 1Bh A6h 40h 4Eh 80h 80h 40h A7h FFh FEh FFh FFh FEh A8h 21h 21h 00h 00h 21h A9h DBh C0h A0h A0h 9Bh AAh 0Fh 0Fh 0Fh 0Fh 3Fh ABh 00h 00h 00h 00h 00h ACh 00h 00h 00h 00h 00h ADh 00h 00h 00h 00h 00h AEh 0Fh 0Fh 0Fh 0Fh 0Fh AFh 02h 02h 02h 03h 00h Submit Documentation Feedback LP8556-E11 Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 LP8556SQ (WQFN) Configurations and Pre-configured EPROM Settings ADDRESS LP8556-E00 LP8556-E08 LP8556-E09 98h[7] 1b 1b 1b 9Eh 22h 22h 22h A0h FFh FFh FFh A1h CFh CFh CFh A2h 2Fh 2Fh 2Fh A3h 5Eh 5Eh 02h A4h 72h 72h 72h A5h 14h 24h 04h A6h 80h 80h 80h A7h FEh FEh FEh A8h 00h 00h 00h A9h A0h A0h A0h AAh 0Fh 0Fh 0Fh ABh 00h 00h 00h ACh 00h 00h 00h ADh 00h 00h 00h AEh 0Fh 0Fh 0Fh AFh 00h 00h 00h CFG98 Address 98h CFG98 register 7 6 5 4 Name Bit Access IBOOST_LIM_2X 7 R/W 3 2 1 0 IBOOST_LIM_2X (1) Description Select the inductor current limit range. When IBOOST_LIM_2X = 0, the inductor current limit can be set to 0.9A, 1.2A, 1.5A or 1.8A. When IBOOST_LIM_2X = 1, the inductor current limit can be set to 1.6A, 2.1A, or 2.6A . This option is supported only on WQFN package and not on DSBGA package. See (1). 1.8A is the maximum ISW_LIM supported with the DSBGA package. For applications requiring the ISW_LIM to be greater than 1.8A and up to 2.6A, WQFN package should be considered. CFG9E Address 9Eh CFG9E register 7 6 5 4 3 VBOOST_RANGE 2 1 0 HEADROOM_OFFSET Name Bit Access VBOOST_RANGE 5 R/W Select VBOOST range. When VBOOST_RANGE = 0, the output voltage range is from 7V to 34V When VBOOST_RANGE = 1, the output voltage range is from 16V to 43V Description HEADROOM_ OFFSET 3:0 R/W LED driver headroom offset. This adjusts the LOW comparator threshold together with LED_HEADROOM bits and contributes to the MID comparator threshold. 0000 = 460 mV 0001 = 390 mV 0010 = 320 mV 0100 = 250 mV 1000 = 180 mV Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 37 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com CFG0 Address A0h CFG0 register 7 6 5 4 3 2 1 0 CURRENT LSB[7:0] Name Bit Access Description CURRENT LSB 7:0 R/W The 8-bits in this register (LSB) along the 4-bits defined in CFG1 Register (MSB) allow LED current to be set in 12-bit fine steps. These 12-bits further scale the maximum LED current set using CFG1 Register, CURRENT_MAX bits (denoted as IMAX ). If ISET_EN = 0, the LED current is defined with the bits as shown below. If ISET_EN = 1, then the external resistor connected to the ISET pin scales the LED current as shown below. ISET_EN = 0 ISET_EN = 1 0000 0000 0000 0A 0A 0000 0000 0001 (1/4095) x IMAX (1/4095) x IMAX x 20000 x 1.2V / RISET 0000 0000 0010 (2/4095) x IMAX (2/4095) x IMAX x 20000 x 1.2V / RISET ... ... ... 0111 1111 1111 (2047/4095) x IMAX (2047/4095) x IMAX x 20000 x 1.2V / RISET ... ... ... 1111 1111 1101 (4093/4095) x IMAX (4093/4095) x IMAX x 20000 x 1.2V / RISET 1111 1111 1110 (4094/4095) x IMAX (4094/4095) x IMAX x 20000 x 1.2V / RISET 1111 1111 1111 (4095/4095) x IMAX (4095/4095) x IMAX x 20000 x 1.2V / RISET CFG1 Address A1h CFG1 register 7 6 PDET_STDBY Name 5 4 3 CURRENT_MAX[2:0] Bit Access 2 1 0 CURRENT MSB[11:8] Description PDET_STDBY 7 R/W Enable Standby when PWM input is constant low (approx. 50 ms timeout). CURRENT_MAX 6:4 R/W Set Maximum LED current as shown below. This maximum current is scaled as described in the CFG0 Register. 000 = 5 mA 001 = 10 mA 010 = 15 mA 011 = 20 mA 100 = 23 mA 101 = 25 mA 110 = 30 mA 111 = 50 mA CURRENT MSB 3:0 R/W These bits form the 4 MSB bits for LED Current as described in CFG0 Register 38 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 CFG2 Address A2h CFG2 register 7 6 RESERVED 5 4 3 2 1 0 UVLO_EN UVLO_TH BL_ON ISET_EN BOOST_ _FSET_EN PWM_ _FSET_EN Name Bit Access RESERVED 7:6 R/W Description UVLO_EN 5 R/W Undervoltage lockout protection enable. UVLO_TH 4 R/W UVLO threshold levels: 0 = 2.5V 1 = 5.2V BL_ON 3 R/W Enable backlight. This bit must be set for PWM only control. 0 = Backlight disabled. This selection is recommended for systems with an I2C master. With an I2C master, the backlight can be controlled by writing to the register 01h. 1 = Backlight enabled. This selection is recommended for systems with PWM only control. ISET_EN 2 R/W Enable LED current set resistor. 0 = Resistor is disabled and current is set with CURRENT and CURRENT_MAX EPROM register bits. 1 = Resistor is enabled and current is set with the RISET resistor AND CURRENT AND CURRENT_MAX EPROM register bits. BOOST_FSET_EN 1 R/W Enable configuration of the switching frequency via FSET pin. 0 = Configuration of the switching frequency via FSET pin is is disabled. The switching frequency is set with BOOST_FREQ EPROM register bits. 1 = Configuration of the switching frequency via FSET pin is is enabled. PWM_FSET_EN 0 R/W Enable configuration of the PWM dimming frequency via FSET pin. 0 = Configuration of the switching frequency via FSET pin is is disabled. The switching frequency is set with PWM_FREQ EPROM register bits. 1 = Configuration of the PWM dimming frequency via FSET pin is is enabled. CFG3 Address A3h CFG3 register 7 6 RESERVED Name 5 4 SLOPE[2:0] 3 2 1 FILTER[1:0] 0 PWM_INPUT_HYSTERESIS[1:0] Bit Access Description RESERVED 7 R/W SLOPE 6:4 R/W Select brightness change transition duration 000 = 0 ms (immediate change) 001 = 1 ms 010 = 2 ms 011 = 50 ms 100 = 100 ms 101 = 200 ms 110 = 300 ms 111 = 500 ms FILTER 3:2 R/W Select brightness change transition filtering strength 00 = No filtering. 01 = light smoothing 10 = medium smoothing 11 = heavy smoothing PWM_INPUT_ _HYSTERESIS 1:0 R/W PWM input hysteresis function. 00 = OFF 01 = 1-bit hysteresis with 13-bit resolution 10 = 1-bit hysteresis with 12-bit resolution 11 = 1-bit hysteresis with 8-bit resolution Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 39 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com CFG4 Address A4h CFG4 register 7 6 5 4 PWM_TO_I_THRESHOLD[3:0] Name Bit Access PWM_TO_I_ _THRESHOLD 7:4 R/W 3 2 RESERVED STEADY_ _DITHER 1 0 DITHER[1:0] Description Select switch point between PWM and pure current dimming 0000 = current dimming across entire range 0001 = switch point at 10% of the maximum LED current. 0010 = switch point at 12.5% of the maximum LED current. 0011 = switch point at 15% of the maximum LED current. 0100 = switch point at 17.5% of the maximum LED current. 0101 = switch point at 20% of the maximum LED current. 0110 = switch point at 22.5% of the maximum LED current. 0111 = switch point at 25% of the maximum LED current. This is a recommended selection. 1000 = switch point at 33.33% of the maximum LED current. 1001 = switch point at 41.67% of the maximum LED current. 1010 = switch point at 50% of the maximum LED current. 1011 to 1111 = PWM dimming across entire range RESERVED 3 R/W STEADY_DITHER 2 R/W Dither function method select: 0 = Dither only on transitions 1 = Dither at all times DITHER 1:0 R/W Dither function control 00 = Dithering disabled 01 = 1-bit dithering 10 = 2-bit dithering 11 = 3-bit dithering CFG5 Address A5h CFG5 register 7 6 PWM_DIRECT 40 5 4 3 PS_MODE[2:0] 2 1 0 PWM_FREQ[3:0] Name Bit Access PWM_DIRECT 7 R/W Description Intended for certain test mode purposes. When enabled, the entire pipeline is bypassed and PWM output is connected with PWM input. PS_MODE 6:4 R/W Select PWM output phase configuration: 000 = 6-phase, 6 drivers (0°, 60°, 120°, 180°, 240°, 320°) 001 = 5-phase, 5 drivers (0°, 72°, 144°, 216°, 288°, OFF) 010 = 4-phase, 4 drivers (0°, 90°, 180°, 270°, OFF, OFF) 011 = 3-phase, 3 drivers (0°, 120°, 240°, OFF, OFF, OFF) 100 = 2-phase, 2 drivers (0°, 180°, OFF, OFF, OFF, OFF) 101 = 3-phase, 6 drivers (0°, 0°, 120°, 120°, 240°, 240°) 110 = 2-phase, 6 drivers (0°, 0°, 0°, 180°, 180°, 180°) 111 = 1-phase, 6 drivers (0°, 0°, 0°, 0°, 0°, 0°) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 CFG5 register PWM_FREQ 3:0 R/W 6 5 0h = 4,808Hz (11-bit) 1h = 6,010Hz (10-bit) 2h = 7,212Hz (10-bit) 3h = 8,414Hz (10-bit) 4h = 9,616Hz (10-bit) 5h = 12,020Hz (9-bit) 6h = 13,222Hz (9-bit) 7h = 14,424Hz (9-bit) 8h = 15,626Hz (9-bit) 9h = 16,828Hz (9-bit) Ah = 18,030Hz (9-bit) Bh = 19,232Hz (9-bit) Ch = 24,040Hz (8-bit) Dh = 28,848Hz (8-bit) Eh = 33,656Hz (8-bit) Fh = 38,464Hz(8-bit) CFG6 Address A6h CFG6 register 7 4 BOOST_FREQ[1:0] 3 2 1 0 VBOOST[5:0] Name Bit Access BOOST_FREQ 7:6 R/W Description Set boost switching frequency when BOOST_FSET_EN = 0. 00 = 312 kHz 01 = 625 kHz 10 = 1250 kHz 11 = undefined VBOOST 5:0 R/W Boost output voltage. When ADAPTIVE = 1, this is the boost minimum and initial voltage. CFG7 Address A7h CFG7 register 7 6 RESERVED 5 4 EN_DRV3 EN_DRV2 Access 3 2 1 RESERVED 0 IBOOST_LIM[1:0] Name Bit RESERVED 7:6 Description EN_DRV3 5 R/W Selects boost driver strength to set boost slew rate. See EMI REDUCTION section for more detail. 0 = Driver3 disabled 1 = Driver3 enabled EN_DRV2 4 R/W Selects boost driver strength to set boost slew rate. See EMI REDUCTION section for more detail. 0 = Driver2 disabled 1 = Driver2 enabled RESERVED 3:2 R/W IBOOST_LIM 1:0 R/W Select boost inductor current limit (IBOOST_LIM_2X = 0 / IBOOST_LIM_2X = 1) 00 = 0.9A / 1.6A 01 = 1.2A / 2.1A 10 = 1.5A / 2.6A 11 = 1.8A / not permitted Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 41 LP8556 SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 www.ti.com CFG9 Address A9h CFG9 register 7 6 5 4 VBOOST_MAX[2:0] JUMP_EN 3 2 1 JUMP_THRESHOLD[1:0] Name Bit Access VBOOST_MAX 7:5 R/W Select the maximum boost voltage (typ values) ( VBOOST_RANGE = 0 / VBOOST_RANGE = 1) 010 = NA / 21V 011 = NA / 25V 100 = 21V / 30V 101 = 25V / 34.5V 110 = 30V / 39V 111 = 34V / 43V 0 JUMP_VOLTAGE[1:0] Description JUMP_EN 4 R/W Enable JUMP detection on the PWM input. JUMP_THRESHOLD 3:2 R/W Select JUMP threshold: 00 = 10% 01 = 30% 10 = 50% 11 = 70% JUMP_VOLTAGE 1:0 R/W Select JUMP voltage: 00 = 0.5V 01 = 1V 10 = 2V 11 = 4V CFGA Address AAh CFGA register 42 7 6 SSCLK_EN RESERVED 5 4 RESERVED 3 ADAPTIVE 2 1 0 DRIVER_HEADROOM[2:0] Name Bit Access SSCLK_EN 7 R/W Description RESERVED 6 R/W RESERVED 5:4 R/W ADAPTIVE 3 R/W Enable adaptive boost control. DRIVER_HEADROOM 2:0 R/W LED driver headroom control. This sets the LOW comparator threshold and contributes to the MID comparator threshold. 000 = HEADROOM_OFFSET + 875 mV 001 = HEADROOM_OFFSET + 750 mV 010 = HEADROOM_OFFSET + 625 mV 011 = HEADROOM_OFFSET + 500 mV 100 = HEADROOM_OFFSET + 375 mV 101 = HEADROOM_OFFSET + 250 mV 110 = HEADROOM_OFFSET + 125 mV 111 = HEADROOM_OFFSET mV Enable spread spectrum function. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 LP8556 www.ti.com SNVS871B – JULY 2012 – REVISED SEPTEMBER 2012 CFGE Address AEh CFGE register 7 6 5 STEP_UP[1:0] 4 STEP_DN[1:0] 3 2 1 LED_FAULT_TH[2:0] 0 LED_COMP_HYST[1:0] Name Bit Access STEP_UP 7:6 R/W Description Adaptive headroom UP step size 00 = 105 mV 01 = 210 mV 10 = 420 mV 11 = 840 mV STEP_DN 5:4 R/W Adaptive headroom DOWN step size 00 = 105 mV 01 = 210 mV 10 = 420 mV 11 = 840 mV LED_FAULT_TH 3:2 R/W LED headroom fault threshold. This sets the HIGH comparator threshold. 00 = 5V 01 = 4V 10 = 3V 11 = 2V LED_COMP_HYST 1:0 R/W LED headrom comparison hysteresis. This sets the MID comparator threshold. 00 = DRIVER_HEADROOM + 1000 mV 01 = DRIVER_HEADROOM + 750 mV 10 = DRIVER_HEADROOM + 500 mV 11 = DRIVER_HEADROOM + 250 mV CFGF Address AFh CFGF register 7 6 5 4 3 2 1 0 REVISION Name Bit Access REV 7:0 R/W Description EPROM Settings Revision ID code Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LP8556 43 PACKAGE OPTION ADDENDUM www.ti.com 2-Mar-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Qty Drawing Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) LP8556SQ-E00/NOPB ACTIVE WQFN RTW 24 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM L8556E0 LP8556SQ-E08/NOPB ACTIVE WQFN RTW 24 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM L8556E8 LP8556SQ-E09/NOPB ACTIVE WQFN RTW 24 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM L8556E9 LP8556SQE-E00/NOPB ACTIVE WQFN RTW 24 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM L8556E0 LP8556SQE-E08/NOPB ACTIVE WQFN RTW 24 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM L8556E8 LP8556SQE-E09/NOPB ACTIVE WQFN RTW 24 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM L8556E9 LP8556SQX-E00/NOPB ACTIVE WQFN RTW 24 4500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM L8556E0 LP8556SQX-E08/NOPB ACTIVE WQFN RTW 24 4500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM L8556E8 LP8556SQX-E09/NOPB ACTIVE WQFN RTW 24 4500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM L8556E9 LP8556TME-E02/NOPB ACTIVE DSBGA YFQ 20 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TME-E03/NOPB ACTIVE DSBGA YFQ 20 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TME-E04/NOPB ACTIVE DSBGA YFQ 20 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TME-E05/NOPB ACTIVE DSBGA YFQ 20 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TME-E06/NOPB ACTIVE DSBGA YFQ 20 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TME-E09/NOPB ACTIVE DSBGA YFQ 20 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TME-E11/NOPB PREVIEW DSBGA YFQ 20 TBD Call TI Call TI -40 to 85 LP8556TME-E12/NOPB PREVIEW DSBGA YFQ 20 250 TBD Call TI Call TI -40 to 85 LP8556TMX-E02/NOPB ACTIVE DSBGA YFQ 20 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM Addendum-Page 1 56E3 56E5 56E9 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 2-Mar-2013 Status (1) Package Type Package Pins Package Qty Drawing Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) LP8556TMX-E03/NOPB ACTIVE DSBGA YFQ 20 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TMX-E04/NOPB ACTIVE DSBGA YFQ 20 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TMX-E05/NOPB ACTIVE DSBGA YFQ 20 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TMX-E06/NOPB ACTIVE DSBGA YFQ 20 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TMX-E09/NOPB ACTIVE DSBGA YFQ 20 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM LP8556TMX-E12/NOPB PREVIEW DSBGA YFQ 20 TBD Call TI Call TI (4) 56E3 56E5 56E9 -40 to 85 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Only one of markings shown within the brackets will appear on the physical device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 2 Samples PACKAGE OPTION ADDENDUM www.ti.com 2-Mar-2013 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 3 PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LP8556SQ-E00/NOPB WQFN RTW 24 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LP8556SQ-E08/NOPB WQFN RTW 24 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LP8556SQ-E09/NOPB WQFN RTW 24 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LP8556SQE-E00/NOPB WQFN RTW 24 250 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LP8556SQE-E08/NOPB WQFN RTW 24 250 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LP8556SQE-E09/NOPB WQFN RTW 24 250 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LP8556SQX-E00/NOPB WQFN RTW 24 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LP8556SQX-E08/NOPB WQFN RTW 24 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LP8556SQX-E09/NOPB WQFN RTW 24 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LP8556TME-E02/NOPB DSBGA YFQ 20 250 178.0 8.4 1.83 2.49 0.76 4.0 8.0 Q1 LP8556TME-E03/NOPB DSBGA YFQ 20 250 178.0 8.4 1.83 2.49 0.76 4.0 8.0 Q1 LP8556TME-E04/NOPB DSBGA YFQ 20 250 178.0 8.4 1.83 2.49 0.76 4.0 8.0 Q1 LP8556TME-E05/NOPB DSBGA YFQ 20 250 178.0 8.4 1.83 2.49 0.76 4.0 8.0 Q1 LP8556TME-E06/NOPB DSBGA YFQ 20 250 178.0 8.4 1.83 2.49 0.76 4.0 8.0 Q1 LP8556TME-E09/NOPB DSBGA YFQ 20 250 178.0 8.4 1.83 2.49 0.76 4.0 8.0 Q1 LP8556TMX-E02/NOPB DSBGA YFQ 20 3000 178.0 8.4 1.83 2.49 0.76 4.0 8.0 Q1 LP8556TMX-E03/NOPB DSBGA YFQ 20 3000 178.0 8.4 1.83 2.49 0.76 4.0 8.0 Q1 LP8556TMX-E04/NOPB DSBGA YFQ 20 3000 178.0 8.4 1.83 2.49 0.76 4.0 8.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) LP8556TMX-E05/NOPB DSBGA YFQ 20 3000 178.0 8.4 LP8556TMX-E06/NOPB DSBGA YFQ 20 3000 178.0 8.4 LP8556TMX-E09/NOPB DSBGA YFQ 20 3000 178.0 8.4 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1.83 2.49 0.76 4.0 8.0 Q1 1.83 2.49 0.76 4.0 8.0 Q1 1.83 2.49 0.76 4.0 8.0 Q1 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LP8556SQ-E00/NOPB WQFN RTW 24 1000 203.0 190.0 41.0 LP8556SQ-E08/NOPB WQFN RTW 24 1000 203.0 190.0 41.0 LP8556SQ-E09/NOPB WQFN RTW 24 1000 203.0 190.0 41.0 LP8556SQE-E00/NOPB WQFN RTW 24 250 203.0 190.0 41.0 LP8556SQE-E08/NOPB WQFN RTW 24 250 203.0 190.0 41.0 LP8556SQE-E09/NOPB WQFN RTW 24 250 203.0 190.0 41.0 LP8556SQX-E00/NOPB WQFN RTW 24 4500 349.0 337.0 45.0 LP8556SQX-E08/NOPB WQFN RTW 24 4500 349.0 337.0 45.0 LP8556SQX-E09/NOPB WQFN RTW 24 4500 349.0 337.0 45.0 LP8556TME-E02/NOPB DSBGA YFQ 20 250 203.0 190.0 41.0 LP8556TME-E03/NOPB DSBGA YFQ 20 250 203.0 190.0 41.0 LP8556TME-E04/NOPB DSBGA YFQ 20 250 203.0 190.0 41.0 LP8556TME-E05/NOPB DSBGA YFQ 20 250 203.0 190.0 41.0 LP8556TME-E06/NOPB DSBGA YFQ 20 250 203.0 190.0 41.0 Pack Materials-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LP8556TME-E09/NOPB DSBGA YFQ 20 250 203.0 190.0 41.0 LP8556TMX-E02/NOPB DSBGA YFQ 20 3000 203.0 190.0 41.0 LP8556TMX-E03/NOPB DSBGA YFQ 20 3000 206.0 191.0 90.0 LP8556TMX-E04/NOPB DSBGA YFQ 20 3000 206.0 191.0 90.0 LP8556TMX-E05/NOPB DSBGA YFQ 20 3000 206.0 191.0 90.0 LP8556TMX-E06/NOPB DSBGA YFQ 20 3000 206.0 191.0 90.0 LP8556TMX-E09/NOPB DSBGA YFQ 20 3000 206.0 191.0 90.0 Pack Materials-Page 3 MECHANICAL DATA RTW0024A SQA24A (Rev B) www.ti.com MECHANICAL DATA YFQ0020xxx D 0.600±0.075 E TMD20XXX (Rev D) D: Max = 2.421 mm, Min =2.321 mm E: Max = 1.76 mm, Min = 1.66 mm 4215083/A NOTES: A. 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