DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYW95 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of December 1979 1996 Jun 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW95 series , FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed • High maximum operating temperature • Low leakage current • Excellent stability 2/3 page k(Datasheet) • Guaranteed avalanche energy absorption capability • Available in ammo-pack • Also available with preformed leads for easy insertion. construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM104 Fig.1 Simplified outline (SOD64) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) IFRM PARAMETER CONDITIONS MIN. MAX. UNIT BYW95A − 200 V BYW95B − 400 V BYW95C − 600 V BYW95A − 200 V BYW95B − 400 V BYW95C − 600 V Ttp = 60 °C; lead length = 10 mm see Fig.2; averaged over any 20 ms period; see also Fig.6 − 3.00 A Tamb = 65 °C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 − 1.25 A repetitive peak reverse voltage continuous reverse voltage average forward current repetitive peak forward current Ttp = 60 °C; see Fig.4 − 30 A Tamb = 65 °C; see Fig.5 − 13 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 70 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1996 Jun 07 see Fig.7 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW95 series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER MIN. TYP. MAX. IF = 5 A; Tj = Tj max; see Fig.8 − − 1.25 V IF = 5 A; see Fig.8 − − 1.50 V BYW95A 300 − − V BYW95B 500 − − V BYW95C 700 − − V VR = VRRMmax; see Fig.9 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.9 − − 150 µA VF forward voltage V(BR)R reverse avalanche breakdown voltage IR CONDITIONS UNIT IR = 0.1 mA reverse current trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.12 − − 250 ns Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.10 − 85 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 − − 7 A/µs dI R -------dt THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”. 1996 Jun 07 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW95 series GRAPHICAL DATA MGC609 MGC608 4 2.0 handbook, halfpage handbook, halfpage IF(AV) (A) IF(AV) (A) 1.6 3 1.2 2 0.8 1 0.4 0 0 0 100 200 o Ttp ( C) 100 0 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 200 o Tamb ( C) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGC606 40 handbook, full pagewidth I FRM (A) 30 δ= 0.05 20 0.1 0.2 10 0.5 1.0 0 10 –2 10 –1 1 10 10 2 10 3 tp (ms) 10 4 Ttp = 60 °C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jun 07 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW95 series MGC607 16 handbook, full pagewidth I FRM (A) δ= 0.05 12 0.1 8 0.2 4 0.5 1.0 0 10 –2 10 –1 1 10 2 10 10 3 tp (ms) 10 4 Tamb = 65 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGC575 MGC611 5 handbook, halfpage P (W) a=3 2.5 2 200 handbook, halfpage 1.57 1.42 4 Tj o ( C) 3 100 2 A B C 200 400 600 1 0 0 2 0 IF(AV) (A) 0 4 VR (V) 800 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Jun 07 Dotted line = VRRM; δ = 0.5. Fig.7 5 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW95 series MGC610 MGC574 3 10halfpage handbook, 10 handbook, halfpage IF (A) IR (µA) 8 10 2 6 10 4 1 2 10 1 0 1 0 2 VF (V) 0 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Fig.9 Forward current as a function of forward voltage; maximum values. 100 o Tj ( C) 200 Reverse current as a function of junction temperature; maximum values. MGC605 10 2 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 102 VR (V) 103 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. 1996 Jun 07 Fig.11 Device mounted on a printed-circuit board. 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW95 series DUT handbook, full pagewidth IF (A) + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. IF halfpage andbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1996 Jun 07 7 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW95 series , PACKAGE OUTLINE k handbook, full pagewidth 4.5 max 28 min 5.0 max Dimensions in mm. The marking band indicates the cathode. 28 min a 1.35 max MBC049 Fig.14 SOD64. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 07 8