IRFP4137PbF Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits HEXFET® Power MOSFET D VDSS 300V RDS(on) typ. 56m G 69m max S ID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant S D G TO-247AC Base part number Package Type IRFP4137PbF TO-247AC G D S Gate Drain Source Standard Pack Form Quantity Tube 25 Orderable Part Number IRFP4137PbF Parameter Continuous Drain Current, VGS @ 10V Max. 38 Units ID @ TC = 25°C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A IDM Pulsed Drain Current 152 PD @TC = 25°C Maximum Power Dissipation 341 W Linear Derating Factor 2.3 W/°C VGS dv/dt TJ TSTG Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) ± 20 8.9 V V/ns Mounting Torque, 6-32 or M3 Screw -55 to + 175 °C 300 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy mJ 541 Thermal Resistance Parameter Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient RJC RCS RJA 1 www.irf.com © 2012 International Rectifier Typ. ––– 0.24 ––– Max. 0.44 ––– 40 Units °C/W October 30, 2012 IRFP4137PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units 300 ––– ––– V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.24 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 56 69 VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 ––– ––– ––– ––– ––– 1.3 100 -100 ––– Drain-to-Source Breakdown Voltage V(BR)DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance IGSS RG V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 3.5mA m VGS = 10V, ID = 24A V µA nA VDS = VGS, ID = 250µA VDS =300 V, VGS = 0V VDS =300V,VGS = 0V,TJ =125°C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VDS = 50V, ID =24A ID = 24A nC VDS = 150V VGS = 10V VDD = 195V ID = 24A ns RG= 2.2 VGS = 10V gfs Qg Qgs Qgd td(on) tr Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time 45 ––– ––– ––– ––– ––– ––– 83 28 26 18 23 ––– 125 42 39 ––– ––– S td(off) Turn-Off Delay Time ––– 34 ––– tf Ciss Coss Fall Time Input Capacitance Output Capacitance ––– ––– ––– 20 5168 300 ––– ––– ––– Crss Reverse Transfer Capacitance ––– 77 ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 196 ––– Coss eff.(TR) Output Capacitance (Time Related) ––– 265 ––– Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 40 ––– ––– 160 VSD Diode Forward Voltage ––– ––– 1.3 trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– 302 379 1739 2497 13 ––– ––– ––– ––– ––– VGS = 0V VDS = 50V ƒ = 1.0MHz pF VGS = 0V, VDS = 0V to 240V See Fig.11 VGS = 0V, VDS = 0V to 240V Diode Characteristics IS ISM A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 24A,VGS = 0V TJ = 25°C VDD = 255V TJ = 125°C IF = 24A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C ns Notes: Repetitive rating; pulse width limited by max. junction temperature. Recommended max EAS limit, starting TJ = 25°C, L = 2.05mH, RG = 50, IAS = 24A, VGS =10V. ISD 24A, di/dt 1771A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Ris measured at TJ approximately 90°C 2 www.irf.com © 2012 International Rectifier October 30, 2012 IRFP4137PbF 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 1 5.0V 0.1 BOTTOM VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 10 5.0V 1 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 0.01 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) 100 Fig 2. Typical Output Characteristics 1000 100 TJ = 175°C TJ = 25°C 10 1 VDS = 50V 60µs PULSE WIDTH ID = 24A VGS = 10V 3.0 2.5 2.0 1.5 1.0 0.5 0.1 2 4 6 8 10 12 -60 14 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd Ciss 1000 Coss Crss 100 60 100 140 180 14.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 10000 20 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 -20 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID = 24A 12.0 VDS = 240V VDS = 150V 10.0 VDS= 60V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 1 www.irf.com © 2012 International Rectifier 0 20 40 60 80 100 120 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage October 30, 2012 IRFP4137PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 175°C 100 TJ = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY R (on) DS 100 100µsec 10 1msec 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 1.6 10 42 ID, Drain Current (A) 35 28 21 14 7 0 50 75 100 125 150 175 370 360 Id = 3.5mA 350 340 330 320 310 300 290 280 270 -60 -20 TC , Case Temperature (°C) 20 60 100 140 180 TJ , Temperature ( °C ) Fig 10. Drain-to–Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 9.0 6.0 VGS(th), Gate threshold Voltage (V) 8.0 7.0 6.0 Energy (µJ) 1000 Fig 8. Maximum Safe Operating Area V(BR)DSS, Drain-to-Source Breakdown Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 25 100 VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) 5.0 4.0 3.0 2.0 1.0 0.0 5.0 4.0 3.0 ID = 250µA ID = 1.0mA ID = 1.0A 2.0 1.0 -50 0 50 100 150 200 250 300 350 VDS, Drain-to-Source Voltage (V) Fig 11. Typical Coss Stored Energy 4 DC www.irf.com © 2012 International Rectifier -75 -25 25 75 125 175 225 TJ , Temperature ( °C ) Fig 12. Threshold Voltage vs. Temperature October 30, 2012 IRFP4137PbF Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 60 50 IF = 16A VR = 255V IRRM (A) IRRM (A) 50 TJ = 25°C TJ = 125°C 40 IF = 24A VR = 255V 30 20 TJ = 25°C TJ = 125°C 40 30 20 10 10 0 200 400 600 800 0 1000 200 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 14. Typical Recovery Current vs. dif/dt Fig 15. Typical Recovery Current vs. dif/dt 5000 3500 IF = 16A VR = 255V 3000 IF = 24A VR = 255V 4500 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 4000 2500 QRR (nC) QRR (nC) 400 2000 3500 3000 2500 2000 1500 1500 1000 1000 0 200 400 600 800 1000 diF /dt (A/µs) Fig 16. Typical Stored Charge vs. dif/dt 5 www.irf.com © 2012 International Rectifier 0 200 400 600 800 1000 diF /dt (A/µs) Fig 17. Typical Stored Charge vs. dif/dt October 30, 2012 IRFP4137PbF Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 21a. Gate Charge Test Circuit 6 www.irf.com © 2012 International Rectifier Qgd Qgodr Fig 21b. Gate Charge Waveform October 30, 2012 IRFP4137PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) E Q A A E2/2 "A" A2 E2 2X D B L1 "A" L SEE VIEW"B" 2x b2 3x b Ø .010 BA c b4 e A1 2x LEAD TIP ØP Ø.010 B A -A- S D1 VIEW: "B" THERMAL PAD PLATING BASEMETAL E1 Ø.010 (c) B A VIEW: "A" - "A" (b, b2, b4) SECTION: C-C, D-D, E-E TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2012 International Rectifier October 30, 2012 IRFP4137PbF Qualification Information† Industrial Qualification Level (per JEDEC JESD47F) †† Moisture Sensitivity Level TO-247AC N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 8 www.irf.com © 2012 International Rectifier October 30, 2012