APT5518BFLL
APT5518SFLL
550V 31A 0.180Ω
R
POWER MOS 7
FREDFET
BFLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT5518
UNIT
550
Volts
31
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
VGSM
PD
TJ,TSTG
124
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
31
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
550
Volts
31
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 15.5A)
TYP
MAX
0.180
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
3-2003
BVDSS
Characteristic / Test Conditions
050-7197 Rev A
Symbol
APT5518 BFLL - SFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
C iss
Coss
C rss
Input Capacitance
VGS = 0V
Output Capacitance
VDS = 25V
Total Gate Charge
Qgs
Gate-Source Charge
3
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
ID = 31A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
VDD = 275V
Turn-off Delay Time
tf
ID = 31A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
339
VDD = 367V, VGS = 15V
6
nC
11
RG = 0.6Ω
Eon
UNIT
pF
31
67
26
34
15
11
37
VDD = 275V
td(on)
MAX
3286
625
VGS = 10V
Qgd
td(off)
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
tr
MIN
Test Conditions
ID = 31A, RG = 5Ω
190
INDUCTIVE SWITCHING @ 125°C
585
VDD = 367V VGS = 15V
ID = 31A, RG = 5Ω
µJ
227
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
124
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -31A)
1.3
Volts
15
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
31
5
Reverse Recovery Time
(IS = -31A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
400
Q rr
Reverse Recovery Charge
(IS = -31A, di/dt = 100A/µs)
Tj = 25°C
1.9
Tj = 125°C
6
IRRM
Peak Recovery Current
(IS = -31A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
26
t rr
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.31
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.25
0.7
0.20
Note:
0.5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7197 Rev A
3-2003
0.35
0.15
0.3
0.10
t2
0.1
Peak TJ = PDM x ZθJC + TC
0.05
0
t1
Duty Factor D = t1/t2
0.05
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 2.71mH, RG = 25Ω, Peak IL = 31A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID31A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT5518 BFLL - SFLL
RC MODEL
Junction
temp. ( ”C)
0.119
0.0135F
0.191
0.319F
Power
(Watts)
Case temperature
ID, DRAIN CURRENT (AMPERES)
100
VGS =15 & 10V
80
7.5V
7V
60
6.5V
40
6V
20
5.5V
5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
60
40
TJ = +125°C
TJ = +25°C
20
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
30
25
20
15
10
05
0
25
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
= 15.5A
V
= 10V
D
GS
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
0.0
-50
NORMALIZED TO
= 10V @ 15.5A
GS
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
35
V
1.1
1.0
0.9
0.8
3-2003
0
1.40
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7197 Rev A
ID, DRAIN CURRENT (AMPERES)
100
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
APT5518 BFLL - SFLL
10,000
126
Ciss
50
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10
= 31A
VDS=110V
12
VDS=275V
VDS=440V
8
4
0
20
40
60
80
100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
0
100
Crss
1
10
100
550
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
10mS
1
I
1,000
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
60
V
DD
R
50
G
50
td(off)
= 367V
= 5Ω
T = 125°C
tf
J
40
V
DD
R
G
40
= 367V
tr and tf (ns)
td(on) and td(off) (ns)
L = 100µH
= 5Ω
T = 125°C
30
J
L = 100µH
30
20
20
td(on)
0
0
0
10
20
30
40
50
0
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
DD
R
G
= 5Ω
Eon
T = 125°C
800
SWITCHING ENERGY (µJ)
20
= 367V
J
L = 100µH
E ON includes
diode reverse recovery.
600
400
200
SWITCHING ENERGY (µJ)
V
3-2003
10
1000
1000
050-7197 Rev A
tr
10
10
800
Eon
600
400
Eoff
I
DD
D
= 367V
= 31A
T = 125°C
J
200
L = 100µH
E ON includes
Eoff
0
V
diode reverse recovery.
0
0
10
20
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT5518 BFLL - SFLL
10 %
Gate Voltage
90%
Gate Voltage
TJ = 125 C
T = 125 C
J
t
d(off)
td(on)
t
f
tr
Drain Voltage
Drain Current
90%
90%
10%
5%
5%
Drain Voltage
10 %
Drain Current
0
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60B
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
3-2003
4.50 (.177) Max.
050-7197 Rev A
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)