Cypress CY7C1345F-66BGC 4-mb (128k x 36) flow-through sync sram Datasheet

CY7C1345F
4-Mb (128K x 36) Flow-Through Sync SRAM
Functional Description[1]
Features
• 128K × 36 common I/O
• 3.3V –5% and +10% core power supply (VDD)
• 2.5V or 3.3V I/O supply (VDDQ)
• Fast clock-to-output times
— 6.5 ns (133-MHz version)
— 7.5 ns (117-MHz version)
— 8.0 ns (100-MHz version)
— 11.0 ns (66-MHz version)
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP and 119-ball
BGA packages
• “ZZ” Sleep Mode option
The CY7C1345F is a 131,072 x 36 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW[A:D], and BWE), and Global Write (GW). Asynchronous
inputs include the Output Enable (OE) and the ZZ pin.
The CY7C1345F allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1345F operates from a +3.3V core power supply
while all outputs may operate with either a +2.5 or +3.3V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Logic Block Diagram
ADDRESS
REGISTER
A0, A1, A
A[1:0]
MODE
BURST Q1
COUNTER
AND LOGIC
Q0
CLR
ADV
CLK
ADSC
ADSP
DQD, DQPD
DQD, DQPD
BWD
BYTE
BYTE
WRITE REGISTER
WRITE REGISTER
DQC, DQPC
DQC, DQPC
BWC
BYTE
BYTE
WRITE REGISTER
WRITE REGISTER
DQB, DQPB
BWB
DQB, DQPB
BYTE
BYTE
WRITE REGISTER
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
BUFFERS
DQs
DQPA
DQPB
DQPC
DQPD
WRITE REGISTER
DQA, DQPA
BWA
BWE
DQA, DQPA
BYTE
BYTE
WRITE REGISTER
WRITE REGISTER
INPUT
REGISTERS
GW
ENABLE
REGISTER
CE1
CE2
CE3
OE
ZZ
SLEEP
CONTROL
Note:
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05214 Rev. *C
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised September 24,
CY7C1345F
Selection Guide
133 MHz
6.5
225
40
Maximum Access Time
Maximum Operating Current
Maximum Standby Current
117 MHz
7.5
220
40
100 MHz
8.0
205
40
66 MHz
11.0
195
40
Unit
ns
mA
mA
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Pin Configurations
A
A
35
36
37
38
39
40
41
42
45
46
47
48
49
50
A
A1
A0
NC
NC
VSS
VDD
NC
NC
A
A
A
A
A
A
A
44
34
Document #: 38-05214 Rev. *C
43
81
82
83
84
BWE
GW
OE
ADSC
ADSP
ADV
85
86
87
CLK
89
88
VDD
VSS
91
90
BWA
CE3
93
92
BWC
96
BWB
BWD
97
94
CE2
98
95
A
CE1
99
A
31
VSSQ
VDDQ
DQD
DQD
DQPD
33
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
CY7C1345F
A
BYTE D
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
A
BYTE C
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
32
VDDQ
VSSQ
DQC
DQC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
DQPC
DQC
DQC
100
100-Pin TQFP
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
BYTE B
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
BYTE A
VSSQ
VDDQ
DQA
DQA
DQPA
Page 2 of 17
CY7C1345F
Pin Configurations (continued)
119-Ball BGA
1
2
3
4
5
6
7
A
VDDQ
A
A
ADSP
A
A
VDDQ
B
C
NC
NC
CE2
A
A
A
ADSC
VDD
A
A
CE3
A
NC
NC
D
DQC
DQPC
VSS
NC
VSS
DQPB
DQB
E
F
DQC
VDDQ
DQC
DQC
VSS
VSS
CE1
OE
VSS
VSS
DQB
DQB
DQB
VDDQ
G
H
J
DQC
DQC
VDDQ
DQC
DQC
VDD
BWC
VSS
NC
ADV
GW
VDD
BWB
VSS
NC
DQB
DQB
VDD
DQB
DQB
VDDQ
K
DQD
DQD
VSS
CLK
VSS
DQA
DQA
L
DQD
DQD
BWD
NC
BWA
DQA
DQA
M
N
VDDQ
DQD
DQD
DQD
VSS
VSS
BWE
A1
VSS
VSS
DQA
DQA
VDDQ
DQA
P
DQD
DQPD
VSS
A0
VSS
DQPA
DQA
R
T
NC
NC
A
MODE
A
VDD
NC
A
A
A
NC
NC
NC
U
VDDQ
NC
NC
NC
NC
NC
VDDQ
ZZ
Pin Descriptions
Name
TQFP
BGA
I/O
Description
InputAddress Inputs used to select one of the 128K address
P4,N4,A2,A3,
A5,A6,B3,B5, Synchronous locations. Sampled at the rising edge of the CLK if ADSP or ADSC
C2,C3,C5,C6,
is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed
R2,R6,T3,T4,
the 2-bit counter.
T5
A0, A1, A
37,36,32,
33,34,35,
44,45,46,
47,48,49,
50,81,82,
99,100
BWA,BWB
BWC,BWD
GW
93,94,
95,96
L5,G5,
G3,L3
InputByte Write Select Inputs, active LOW. Qualified with BWE to
Synchronous conduct byte writes to the SRAM. Sampled on the rising edge of CLK.
88
H4
InputGlobal Write Enable Input, active LOW. When asserted LOW on
Synchronous the rising edge of CLK, a global write is conducted (ALL bytes are
written, regardless of the values on BW[A:D] and BWE).
BWE
87
M4
InputByte Write Enable Input, active LOW. Sampled on the rising edge
Synchronous of CLK. This signal must be asserted LOW to conduct a byte write.
CLK
89
K4
CE1
98
E4
InputChip Enable 1 Input, active LOW. Sampled on the rising edge of
Synchronous CLK. Used in conjunction with CE2 and CE3 to select/deselect the
device. ADSP is ignored if CE1 is HIGH.
CE2
97
B2
InputChip Enable 2 Input, active HIGH. Sampled on the rising edge of
Synchronous CLK. Used in conjunction with CE1 and CE3 to select/deselect the
device.
CE3
92
B6
InputChip Enable 3 Input, active LOW. Sampled on the rising edge of CLK.
Synchronous Used in conjunction with CE1 and CE2 to select/deselect the device.
Document #: 38-05214 Rev. *C
Input-Clock
Clock Input. Used to capture all synchronous inputs to the device.
Also used to increment the burst counter when ADV is asserted
LOW, during a burst operation.
Page 3 of 17
CY7C1345F
Pin Descriptions (continued)
Name
TQFP
BGA
OE
86
F4
InputOutput Enable, asynchronous input, active LOW. Controls the
Asynchronous direction of the I/O pins. When LOW, the I/O pins behave as outputs.
When deasserted HIGH, I/O pins are three-stated, and act as input
data pins. OE is masked during the first clock of a read cycle when
emerging from a deselected state.
ADV
83
G4
InputAdvance Input signal, sampled on the rising edge of CLK. When
Synchronous asserted, it automatically increments the address in a burst cycle.
ADSP
84
A4
ADSC
85
B4
ZZ
64
T7
InputAddress Strobe from Processor, sampled on the rising edge of
Synchronous CLK, active LOW. When asserted LOW, addresses presented to the
device are captured in the address registers. A[1:0] are also loaded
into the burst counter. When ADSP and ADSC are both asserted,
only ADSP is recognized. ASDP is ignored when CE1 is deasserted
HIGH
InputAddress Strobe from Controller, sampled on the rising edge of
Synchronous CLK, active LOW. When asserted LOW, addresses presented to the
device are captured in the address registers. A[1:0] are also loaded
into the burst counter. When ADSP and ADSC are both asserted,
only ADSP is recognized.
InputZZ “sleep” Input, active HIGH. When asserted HIGH places the
Asynchronous device in a non-time-critical “sleep” condition with data integrity
preserved. For normal operation, this pin has to be LOW or left
floating. ZZ pin has an internal pull-down.
DQs
DQPA,
DQPB
DQPC,
DQPD
52,53,56,
57,58,59,
62,63,68,
69,72,73,
74,75,78,
79,2,3,6,
7,8,9,12,
13,18,19,
22,23,24,
25,28,29,
51,80,1,30
I/O
Description
I/OBidirectional Data I/O lines. As inputs, they feed into an on-chip
K6,K7,L6,
Synchronous data register that is triggered by the rising edge of CLK. As outputs,
L7,M6,N6,
they deliver the data contained in the memory location specified by
N7,P7,D7,
the addresses presented during the previous clock rise of the read
E6,E7,F6,
cycle. The direction of the pins is controlled by OE. When OE is
G6,G7,H6,
H7,D1,E1,
asserted LOW, the pins behave as outputs. When HIGH, DQs and
E2,F2,G1,
DQP[A:D] are placed in a three-state condition.
G2,H1,H2,
K1,K2,L1,
L2,M2,N1
N2,P1,P6,D6,
D2,P2
VDD
15,41,
65, 91
C4,J2,J4,
R4,J6
VSS
17,40,
67,90
D3,D5,E3,E5,
F3,F5,H3,H5,
K3,K5,M3,M5,
N3,N5,P3,P5
Ground
Ground for the core of the device.
VDDQ
4,11,20,
27,54,61,
70,77
A1,A7,F1,F7,
J1,J7,M1,M7,
U1,U7
I/O Power
Supply
Power supply for the I/O circuitry.
VSSQ
5,10,21,
26,55,60,
71,76
–
I/O Ground
Ground for the I/O circuitry.
31
R3
InputStatic
14,16,38,
39,42,43,
66,
B1,B7,C1,C7,
D4,J3,J5,L4,
R1,R5,R7,T1,
T2,T6,U2,U3,
U4,U5,U6
MODE
NC
Document #: 38-05214 Rev. *C
Power Supply Power supply inputs to the core of the device.
Selects Burst Order. When tied to GND selects linear burst
sequence. When tied to VDD or left floating selects interleaved burst
sequence. This is a strap pin and should remain static during device
operation. Mode Pin has an internal pull-up.
No Connects. Not Internally connected to the die.
Page 4 of 17
CY7C1345F
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. Maximum access delay from
the clock rise (t C0) is 6.5 ns (133-MHz device).
The CY7C1345F supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium® and i486
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is
user-selectable, and is determined by sampling the MODE
input. Accesses can be initiated with either the Processor
Address Strobe (ADSP) or the Controller Address Strobe
(ADSC). Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW[A:D]) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. ADSP is ignored if
CE1 is HIGH.
Single Read Accesses
A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CE1, CE2, and CE3 are all
asserted active, and (2) ADSP or ADSC is asserted LOW (if
the access is initiated by ADSC, the write inputs must be
deasserted during this first cycle). The address presented to
the address inputs is latched into the address register and the
burst counter/control logic and presented to the memory core.
If the OE input is asserted LOW, the requested data will be
available at the data outputs a maximum to tCDV after clock
rise. ADSP is ignored if CE1 is HIGH.
Single Write Accesses Initiated by ADSP
This access is initiated when the following conditions are
satisfied at clock rise: (1) CE1, CE2, CE3 are all asserted
active, and (2) ADSP is asserted LOW. The addresses
presented are loaded into the address register and the burst
inputs (GW, BWE, and BW[A:D] )are ignored during this first
clock cycle. If the write inputs are asserted active ( see Write
Cycle Descriptions table for appropriate states that indicate a
write) on the next clock rise,the appropriate data will be latched
and written into the device.Byte writes are allowed. During
byte writes, BWA controls DQA and BWB controls DQB, BWC
controls DQC, and BWD controls DQD.All I/Os are three-stated
during a byte write.Since this is a common I/O device, the
asynchronous OE input signal must be deasserted and the
I/Os must be three-stated prior to the presentation of data to
DQs. As a safety precaution, the data lines are three-stated
once a write cycle is detected, regardless of the state of OE.
Single Write Accesses Initiated by ADSC
This write access is initiated when the following conditions are
satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted
active, (2) ADSC is asserted LOW, (3) ADSP is deasserted
Document #: 38-05214 Rev. *C
HIGH, and (4) the write input signals (GW, BWE, and BW[A:D])
indicate a write access. ADSC is ignored if ADSP is active LOW.
The addresses presented are loaded into the address register
and the burst counter/control logic and delivered to the
memory core. The information presented to DQ[D:A] will be
written into the specified address location. Byte writes are
allowed. During byte writes, BWA controls DQA, BWB controls
DQB, BWC controls DQC, and BWD controls DQD. All I/Os are
three-stated when a write is detected, even a byte write. Since
this is a common I/O device, the asynchronous OE input signal
must be deasserted and the I/Os must be three-stated prior to
the presentation of data to DQs. As a safety precaution, the
data lines are three-stated once a write cycle is detected,
regardless of the state of OE.
Burst Sequences
The CY7C1345F provides an on-chip two-bit wraparound
burst counter inside the SRAM. The burst counter is fed by
A[1:0], and can follow either a linear or interleaved burst order.
The burst order is determined by the state of the MODE input.
A LOW on MODE will select a linear burst sequence. A HIGH
on MODE will select an interleaved burst order. Leaving
MODE unconnected will cause the device to default to a interleaved burst sequence.
Interleaved Burst Address Table (MODE =
Floating or VDD)
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Address Table (MODE = GND)
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CEs, ADSP, and ADSC must remain
inactive for the duration of tZZREC after the ZZ input returns
LOW.
Page 5 of 17
CY7C1345F
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
IDDZZ
Snooze mode standby current
ZZ > VDD – 0.2V
tZZS
Device operation to ZZ
ZZ > VDD – 0.2V
tZZREC
ZZ recovery time
ZZ < 0.2V
tZZI
ZZ Active to snooze current
This parameter is sampled
tRZZI
ZZ Inactive to exit snooze current
This parameter is sampled
Max.
Unit
40
mA
2tCYC
ns
2tCYC
ns
2tCYC
ns
0
ns
Truth Table[2, 3, 4, 5, 6]
Cycle Description
Address
Used
ZZ
ADSP
ADSC
Deselected Cycle,
Power-down
None
CE1 CE2 CE3
H
X
X
L
X
L
ADV WRITE
X
X
OE
X
CLK
L-H three-state
Deselected Cycle,
Power-down
None
L
L
X
L
L
X
X
X
X
L-H three-state
Deselected Cycle,
Power-down
None
L
X
H
L
L
X
X
X
X
L-H three-state
Deselected Cycle,
Power-down
None
L
L
X
L
H
L
X
X
X
L-H three-state
Deselected Cycle,
Power-down
None
X
X
X
L
H
L
X
X
X
L-H three-state
Snooze Mode, Power-down
None
X
X
X
H
X
X
X
X
X
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H Q
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H three-state
X
DQ
three-state
Write Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H D
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H Q
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H three-state
Next
X
X
X
L
H
H
L
H
L
L-H Q
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H three-state
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H three-state
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H three-state
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H Q
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H three-state
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H D
Notes:
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write enable signals (BWA, BWB, BWC, BWD) and BWE = L or GW= L. WRITE = H when all Byte write enable signals
(BWA, BWB, BWC, BWD), BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW[A: D]. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is
a don't care for the remainder of the write cycle.
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are three-state when OE
is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05214 Rev. *C
Page 6 of 17
CY7C1345F
Partial Truth Table for Read/Write[2, 7]
Function
BWE
H
BWD
Read
GW
H
BWC
BWB
BWA
X
X
X
X
Read
H
L
H
H
H
H
Write Byte (A, DQPA)
H
L
H
H
H
L
Write Byte (B, DQPB)
H
L
H
H
L
H
Write Bytes (B, A, DQPA, DQPB)
H
L
H
H
L
L
Write Byte (C, DQPC)
H
L
H
L
H
H
Write Bytes (C, A, DQPC, DQPA)
H
L
H
L
H
L
Write Bytes (C, B, DQPC, DQPB)
H
L
H
L
L
H
Write Bytes (C, B, A, DQPC, DQPB, DQPA)
H
L
H
L
L
L
Write Byte (D, DQPD)
H
L
L
H
H
H
Write Bytes (D, A, DQPD, DQPA)
H
L
L
H
H
L
Write Bytes (D, B, DQPD, DQPA)
H
L
L
H
L
H
Write Bytes (D, B, A, DQPD, DQPB, DQPA)
H
L
L
H
L
L
Write Bytes (D, B, DQPD, DQPB)
H
L
L
L
H
H
Write Bytes (D, B, A, DQPD, DQPC, DQPA)
H
L
L
L
H
L
Write Bytes (D, C, A, DQPD, DQPB, DQPA)
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Note:
7. Table only lists a partial listing of the byte write combinations. Any combination of BW[A:D] is valid. Appropriate write will be done based on which byte write is active.
Document #: 38-05214 Rev. *C
Page 7 of 17
CY7C1345F
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guidelines, not tested.)
Latch-up Current..................................................... >200 mA
Storage Temperature ................................. –65°C to +150°C
Operating Range
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
Range
DC Voltage Applied to Outputs
in three-state ....................................... –0.5V to VDDQ + 0.5V
Commercial
Industrial
DC Input Voltage....................................–0.5V to VDD + 0.5V
Electrical Characteristics Over the Operating Range
Ambient
Temperature]
VDD
VDDQ
3.3V −5%/+10% 2.5V –5%
to VDD
–40°C to +85°C
0°C to +70°C
[8, 9]
CY7C1345F
Parameter
Description
Test Conditions
Min.
Max.
Unit
3.135
3.6
V
2.375
VDD
VDD
Power Supply Voltage
VDDQ
I/O Supply Voltage
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage[8]
IX
Input Load Current
(except ZZ and MODE)
GND ≤ VI ≤ VDDQ
Input Current of MODE
Input = VSS
–30
VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA
2.4
VDDQ = 2.5V, VDD = Min., IOH = –1.0 mA
2.0
VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA
0.4
V
VDD + 0.3V
V
VDDQ = 2.5V
1.7
VDD + 0.3V
V
VDDQ = 3.3V
–0.3
0.8
V
VDDQ = 2.5V
–0.3
0.7
V
−5
5
µA
Input = VDD
IOZ
Output Leakage Current
GND ≤ VI ≤ VDD, Output Disabled
IOS
Output Short Circuit Current
VDD = Max., VOUT = GND
IDD
VDD Operating Supply Current
VDD = Max., IOUT = 0 mA,
f = fMAX= 1/tCYC
7.5-ns cycle, 133 MHz
Automatic CE Power-down
Current—CMOS Inputs
30
µA
5
µA
–300
µA
225
mA
8.0-ns cycle, 117 MHz
220
mA
10-ns cycle, 100 MHz
205
mA
15-ns cycle, 66 MHz
195
mA
7.5-ns cycle, 133 MHz
90
mA
8.0-ns cycle, 117 MHz
85
mA
10-ns cycle, 100 MHz
80
mA
60
mA
40
mA
15-ns cycle, 66 MHz
ISB2
–5
µA
µA
–5
Input = VDD
Max. VDD, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = fMAX,
inputs switching
µA
5
Input = VSS
Automatic CE Power-down
Current—TTL Inputs
V
2.0
VDDQ = 3.3V
Input Current of ZZ
ISB1
V
0.4
VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA
V
V
All speeds
Max. VDD, Device Deselected,
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
Shaded areas contain advance information.
Notes:
8. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > -2V (Pulse width less than tCYC/2).
9. TPower-up: Assumes a linear ramp from 0v to VDD(min.) within 200ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05214 Rev. *C
Page 8 of 17
CY7C1345F
Electrical Characteristics Over the Operating Range (continued) [8, 9]
CY7C1345F
Parameter
Description
Test Conditions
Automatic CE Power-down
Current—CMOS Inputs
ISB3
Min.
Max. VDD, Device Deselected,
7.5-ns cycle, 133 MHz
VIN ≥ VDDQ – 0.3V or VIN ≤ 0.3V, 8.0-ns cycle, 117 MHz
f = fMAX, inputs switching
10-ns cycle, 100 MHz
15-ns cycle, 66 MHz
ISB4
Automatic CE Power-down
Current—TTL Inputs
Max. VDD, Device Deselected, All speeds
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
Max.
Unit
75
mA
70
mA
65
mA
45
mA
45
mA
Thermal Resistance[10]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard
test methods and procedures for
measuring thermal impedance,
per EIA / JESD51.
TQFP
Package
BGA
Package
Unit
41.83
47.63
°C/W
9.99
11.71
°C/W
Capacitance[10]
Parameter
Description
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CI/O
Input/Output Capacitance
Test Conditions
TQFP
Package
BGA
Package
Unit
5
5
pF
5
5
pF
5
7
pF
TA = 25°C, f = 1 MHz,
VDD = 3.3V.
VDDQ = 3.3V
AC Test Loads and Waveforms
3.3V I/O Test Load
R = 317Ω
3.3V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
GND
5 pF
R = 351Ω
INCLUDING
JIG AND
SCOPE
10%
90%
10%
90%
≤ 1ns
≤ 1ns
VL = 1.5V
(a)
ALL INPUT PULSES
VDD
(c)
(b)
2.5V I/O Test Load
R = 1667Ω
2.5V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
VL = 1.25V
(a)
ALL INPUT PULSES
VDD
GND
5 pF
INCLUDING
JIG AND
SCOPE
R =1538Ω
(b)
10%
90%
10%
90%
≤ 1ns
≤ 1ns
(c)
Note:
10. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05214 Rev. *C
Page 9 of 17
CY7C1345F
Switching Characteristics Over the Operating Range [15, 16]
133 MHz
Parameter
tPOWER
Description
VDD(Typical) to the first Access
117 MHz
100 MHz
66 MHz
Min. Max. Min. Max. Min. Max. Min. Max.
[11]
1
1
1
Unit
1
ms
Clock
tCYC
Clock Cycle Time
7.5
8.5
10
15
ns
tCH
Clock HIGH
2.5
3.0
4.0
5.0
ns
tCL
Clock LOW
2.5
3.0
4.0
5.0
ns
Output Times
tCDV
Data Output Valid After CLK Rise
tDOH
Data Output Hold After CLK Rise
2.0
tCLZ
Clock to
Low-Z[12, 13, 14]
0
tCHZ
Clock to High-Z[12, 13, 14]
tOEV
OE LOW to Output Valid
tOELZ
OE LOW to Output Low-Z[12, 13, 14]
tOEHZ
OE HIGH to Output
6.5
7.5
2.0
0
3.5
High-Z[12, 13, 14]
3.5
3.5
0
3.5
ns
5.0
ns
6.0
ns
0
3.5
ns
ns
0
3.5
3.5
0
11.0
2.0
0
3.5
3.5
0
8.0
2.0
ns
6.0
ns
Setup Times
tAS
Address Set-up Before CLK Rise
1.5
2.0
2.0
2.0
ns
tADS
ADSP, ADSC Set-up Before CLK Rise
1.5
2.0
2.0
2.0
ns
tADVS
ADV Set-up Before CLK Rise
1.5
2.0
2.0
2.0
ns
tWES
1.5
2.0
2.0
2.0
ns
tDS
GW, BWE, BW[A:D] Set-up Before CLK Rise
Data Input Set-up Before CLK Rise
1.5
2.0
2.0
2.0
ns
tCES
Chip Enable Set-up
1.5
2.0
2.0
2.0
ns
tAH
Address Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
tADH
ADSP, ADSC Hold After CLK Rise
GW,BWE, BW[A:D] Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
tWEH
0.5
0.5
0.5
0.5
ns
tADVH
ADV Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
tDH
Data Input Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
Hold Times
Shaded areas contain advance information.
Notes:
11. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation
can be initiated.
12. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
13. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
14. This parameter is sampled and not 100% tested.
15. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
16. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05214 Rev. *C
Page 10 of 17
CY7C1345F
Timing Diagrams
Read Cycle Timing[17]
tCYC
CLK
t
tADS
t CL
CH
tADH
ADSP
tADS
tADH
ADSC
tAS
tAH
A1
ADDRESS
A2
t
WES
t
WEH
GW, BWE,BW
[A:D]
tCES
Deselect Cycle
t CEH
CE
t
ADVS
t
ADVH
ADV
ADV suspends burst.
OE
t OEV
t OEHZ
t CLZ
Data Out (Q)
High-Z
Q(A1)
t OELZ
tCDV
t CHZ
tDOH
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
t CDV
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Burst wraps around
to its initial state
Single READ
BURST
READ
DON’T CARE
UNDEFINED
Note:
17. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document #: 38-05214 Rev. *C
Page 11 of 17
CY7C1345F
Timing Diagrams (continued)
Write Cycle Timing[17, 18]
t CYC
CLK
t
tADS
t
CH
CL
tADH
ADSP
tADS
ADSC extends burst
tADH
tADS
tADH
ADSC
tAS
tAH
A1
ADDRESS
A2
A3
Byte write signals are ignored for first cycle when
ADSP initiates burst
tWES tWEH
BWE,
BWX
t
t
WES WEH
GW
tCES
tCEH
CE
tADVS tADVH
ADV
ADV suspends burst
OE
t
Data in (D)
High-Z
t
OEHZ
t
DS DH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
Extended BURST WRITE
Note:
DON’T CARE
UNDEFINED
18. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW[A:D] LOW.
Document #: 38-05214 Rev. *C
Page 12 of 17
CY7C1345F
Timing Diagrams (continued)
Read/Write Timing[17, 19, 20]
CLK
t
CH
tADS
tADH
tAS
tAH
t
CL
ADSP
ADSC
ADDRESS
A1
A2
A3
A4
A5
A6
D(A5)
D(A6)
t
t
WES WEH
BWE, BWX
tCES
tCEH
CE
ADV
OE
tDS
Data In (D)
Data Out (Q)
High-Z
t
OEHZ
Q(A1)
tDH
D(A3)
tCDV
Q(A2)
Back-to-Back READs
tOELZ
Q(A4)
Single WRITE
Q(A4+1)
Q(A4+2)
BURST READ
Q(A4+3)
Back-to-Back
WRITEs
Notes:
19. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC.
20. GW is HIGH.
Document #: 38-05214 Rev. *C
Page 13 of 17
CY7C1345F
Timing Diagrams (continued)
ZZ Mode Timing[21, 22]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Outputs (Q)
High-Z
DON’T CARE
Ordering Information
Speed
(MHz)
133
Ordering Code
CY7C1345F-133AC
CY7C1345F-133BGC
CY7C1345F-133AI
117
Operating
Range
A101
100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Commercial
BG119
A101
BG119
CY7C1345F-117AC
A101
CY7C1345F-117AI
CY7C1345F-117BGI
CY7C1345F-100AC
CY7C1345F-100BGC
CY7C1345F-100AI
CY7C1345F-100BGI
66
Package Type
CY7C1345F-133BGI
CY7C1345F-117BGC
100
Package
Name
CY7C1345F-66AC
CY7C1345F-66BGC
CY7C1345F-66AI
CY7C1345F-66BGI
BG119
A101
BG119
A101
BG119
A101
BG119
A101
BG119
A101
BG119
119-Ball PBGA (14 x 22 x 2.4mm)
100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Industrial
119-Ball PBGA (14 x 22 x 2.4mm)
100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Commercial
119-Ball PBGA (14 x 22 x 2.4mm)
100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Industrial
119-Ball PBGA (14 x 22 x 2.4mm)
100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Commercial
119-Ball PBGA (14 x 22 x 2.4mm)
100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Industrial
119-Ball PBGA (14 x 22 x 2.4mm)
100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Commercial
119-Ball PBGA (14 x 22 x 2.4mm)
100-Lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
Industrial
119-Ball PBGA (14 x 22 x 2.4mm)
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Notes:
21. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.
22. DQs are in high-Z when exiting ZZ sleep mode.
Document #: 38-05214 Rev. *C
Page 14 of 17
CY7C1345F
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101
51-85050-*A
Document #: 38-05214 Rev. *C
Page 15 of 17
CY7C1345F
Package Diagrams (continued)
119-Lead BGA (14 x 22 x 2.4 mm) BG119
51-85115-*B
Intel and Pentium are registered trademarks of Intel Corporation. All product and company names mentioned in this document
may be the trademarks of their respective holders.
Document #: 38-05214 Rev. *C
Page 16 of 17
© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1345F
Document History Page
Document Title: CY7C1345F 4-Mb (128K x 36) Flow-Through Sync SRAM
Document Number: 38-05214
REV.
ECN NO.
Issue Date
Orig. of
Change
Description of Change
**
119831
12/11/02
HGK
New data sheet
*A
123118
01/18/03
RBI
Added power-up requirements to AC test loads and waveforms information
*B
200663
12/19/03
REF
Final data sheet
*C
280230
See ECN
NJY
Corrected the timing diagrams for Write Cycle and Read/Write Cycle Timing
on page 12 and 13 of the data sheet
Corrected typo in the part number in the Document Title on page 17 from
CY7C1345B to CY7C1345F
Document #: 38-05214 Rev. *C
Page 17 of 17