CDIL CSD1134B Pnp / npn plastic power transistor Datasheet

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
CSB857, CSB858
CSD1133, CSD1134
CSB857, 858
PNP PLASTIC POWER TRANSISTORS
CSD1133, 1134 NPN PLASTIC POWER TRANSISTORS
Low frequency Power Amplifier
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
B
C
E
DIM
MIN .
A
B
C
D
E
F
G
H
J
K
L
M
N
O
14.42
9.63
3.56
A
O
3
K
All diminsions in mm.
L
N
1 2
O
H
F
J
D
G
M
3
MAX.
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DEG 7
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 2 A; IB = 200 mA
D.C. current gain
IC = 1 A; VCE = 4 V
VCBO
VCEO
IC
Ptot
Tj
857
1133
max. 70
max. 50
max.
max.
max.
858
1134
70 V
60 V
4.0
A
40
W
150
°C
VCEsat
max.
1.0
hFE
min.
max.
60
320
857
1133
max. 70
max. 50
max.
858
1134
70 V
60 V
5.0
V
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Continental Device India Limited
VCBO
VCEO
VEBO
Data Sheet
V
Page 1 of 3
CSB857, CSB858
CSD1133, CSD1134
Collector current
Collector current (Peak value)
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
IC
IC
Ptot
Tj
Tstg
max.
max.
max.
max.
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 50V
Breakdown voltages
IC = 50 mA; IB = 0
IC = 10 µA; IE = 0
IE = 10 µA; IC = 0
Saturation voltage
IC = 2 A; IB = 0.2 A
Base emitter on voltage
IC = 1 A; VCE = 4 V
D.C. current gain
IC = 0.1 A; VCE = 4 V
IC = 1.0 A; VCE = 4 V**
Transition frequency
IC = 0.5 A; VCE = 4 V
PNP
NPN
4.0
8.0
40
150
–65 to +150
857
1133
ICBO
max.
VCEO
VCBO
VEBO
min.
min.
min.
VCEsat*
A
A
W
ºC
ºC
858
1134
1.0
50
µA
70
5.0
60 V
V
V
max.
1.0
V
VBE(on)*
max.
1.0
V
hFE*
min.
35
hFE*
min.
max.
60
320
fT
typ.
typ.
15
7.0
MHz
MHz
** hFE classification: B: 60-120 C: 100-200 D: 160-320
* Pulse test
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
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for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
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information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
[email protected]
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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