PD-97192C IRHNM57110 JANSR2N7503U8 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743 5 Product Summary Part Number IRHNM57110 IRHNM53110 Radiation Level RDS(on) 100K Rads (Si) 0.22Ω 300K Rads (Si) 0.22Ω ID QPL Part Number 6.9A JANSR2N7503U8 6.9A JANSF2N7503U8 SMD-0.2 Refer to Page 10 for 1 Additional Part Number IRHNMC57110 (Ceramic Lid) International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/ (mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. (METAL LID) Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Complimentary P-Channel Available IRHNM597110, IRHNMC597110 Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight TECHNOLOGY Units 6.9 4.4 27.6 23 0.18 ±20 24 6.9 2.3 11.5 -55 to 150 300 (for 5s) 0.25 (Typical) A W W/°C V mJ A mJ V/ns °C g For footnotes refer to the last page www.irf.com 1 02/06/12 Pre-Irradiation IRHNM57110, JANSR2N7503U8 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage 100 — — V — 0.13 — V/°C — — 0.22 Ω 2.0 — 3.6 — — — -7.5 — — — 4.0 — — 10 25 V mV/°C S nA ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 100 -100 15 4.0 5.0 6.6 5.4 34 15 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 378 108 2.3 — — — Rg Gate Resistance VDS = VGS, ID = 1.0mA nC ns VDD = 50V, ID = 6.9A, VGS = 12V, RG = 7.5Ω nH pF Ω 8.0 VGS = 12V, ID = 4.4A Ã VDS = 15V, IDS = 4.4A Ã VDS= 80V ,VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 6.9A VDS = 50V µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 100KHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 6.9 27.6 1.2 144 633 Test Conditions A V ns nC Tj = 25°C, IS = 6.9A, VGS = 0V Tj = 25°C, IF = 6.9A, di/dt ≤ 100A/µs VDD ≤ 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 5.4 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation Radiation Characteristics IRHNM57110, JANSR2N7503U8 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-state Resistance (SMD-0.2) Diode Forward Voltage VSD Test Conditions V µA VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS = 80V, VGS = 0V 0.226 Ω VGS = 12V, ID = 4.4A 0.22 Ω VGS = 12V, ID = 4.4A 1.2 V VGS = 0V, ID = 6.9A Min Max 100 2.0 — — — — 4.0 100 -100 10 — — — Units Up to 300K Rads (Si) 1 nA 1. Part Numbers IRHNM57110, IRHNM53110. Additional part numbers ae listed on page 10. International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET 2 (MeV/(mg/cm )) Energy Range (MeV) (µm) VDS (V) @VGS = @VGS = @VGS = @VGS = @VGS = 0V -5V -10V -15V -20V 300 ± 7.5% 38 ± 7.5% 100 100 100 100 100 61 ± 5% 330 ± 7.5% 31 ± 10% 100 100 100 35 25 84 ± 5% 350 ± 10% 28 ± 7.5% 100 100 80 25 - Bias VDS (V) 38 ± 5% 120 100 80 60 40 20 0 LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% 0 -5 -10 -15 -20 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 Pre-Irradiation IRHNM57110, JANSR2N7503U8 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V 5.0V 1 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 10 BOTTOM 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 T J = 25°C T J = 150°C 10 VDS = 50V 20µs PULSE WIDTH 15 1.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 5.0V 1 VDS, Drain-to-Source Voltage (V) ID = 6.9A 2.0 1.5 1.0 0.5 VGS = 12V 0.0 5 7 9 11 13 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com IRHNM57110, JANSR2N7503U8 1.6 RDS(on), Drain-to -Source On Resistance ( Ω) RDS(on), Drain-to -Source On Resistance ( Ω) Pre-Irradiation ID = 6.9A 1.4 1.2 1.0 0.8 T J = 150°C 0.6 0.4 0.2 T J = 25°C 0 4 6 8 10 12 14 0.8 T J = 150°C 0.6 0.4 T J = 25°C 0.2 Vgs = 12V 0 16 0 2 4 8 10 12 14 16 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current 140 4 ID = 1.0mA VGS(th) Gate threshold Voltage (V) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 6 130 120 110 3 2 1 ID = 50µA ID = 250µA ID = 1.0mA ID = 150mA 0 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) Fig 8. Typical Threshold Voltage Vs Temperature 5 Pre-Irradiation IRHNM57110, JANSR2N7503U8 700 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED 600 C oss = C ds + C gd 20 ID = 6.9A C rss = C gd 500 VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 800 Ciss 400 Coss 300 200 100 16 VDS = 80V VDS = 50V VDS = 20V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 17 Crss 0 0 1 10 100 0 2 VDS, Drain-to-Source Voltage (V) 4 6 8 10 12 14 16 QG, Total Gate Charge (nC) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 100 7 ISD, Reverse Drain Current (A) 6 ID, Drain Current (A) 10 TJ = 150°C 1 T J = 25°C 0.1 4 3 2 1 VGS = 0V 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) Fig 11. Typical Source-Drain Diode Forward Voltage 6 5 1.6 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 12. Maximum Drain Current Vs. Case Temperature www.irf.com Pre-Irradiation 50 OPERATION IN THIS AREA LIMITED BY RDS(on) EAS , Single Pulse Avalanche Energy (mJ) ID, Drain-to-Source Current (A) 100 IRHNM57110, JANSR2N7503U8 10 100µs 1 1ms Tc = 25°C Tj = 150°C Single Pulse 0.1 10ms DC TOP 40 BOTTOM ID 3.1A 4.4A 6.9A 30 20 10 0 1 10 100 1000 VDS , Drain-to-Source Voltage (V) 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current Thermal Response ( Z thJC ) 10 D = 0.50 0.20 1 P DM 0.10 t1 0.05 t2 SINGLE PULSE ( THERMAL RESPONSE ) 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 7 Pre-Irradiation IRHNM57110, JANSR2N7503U8 V(BR)DSS tp 15V DRIVER L VDS D.U.T. RG + - VDD IAS VGS 20V A I AS 0.01Ω tp Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 4.5V 50KΩ .2µF 12V QGS .3µF QGD D.U.T. VG + V - DS VGS 3mA IG Charge Fig 17a. Basic Gate Charge Waveform VDS Fig 17b. Gate Charge Test Circuit RD VDS 90% VGS D.U.T. RG ID Current Sampling Resistors VDD + - VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit 8 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com Pre-Irradiation IRHNM57110, JANSR2N7503U8 Case Outline and Dimensions — SMD-0.2 ( Metal Lid) NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE Case Outline and Dimensions — SMD-0.2 (Ceramic Lid) NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. www.irf.com PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE 9 Pre-Irradiation IRHNM57110, JANSR2N7503U8 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25°C, L=1.0 mH Peak IL = 6.9A, VGS = 12V ISD ≤ 6.9A, di/dt ≤ 560A/µs, VDD ≤ 100V, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Additional Product Summary (continued from page 1 and 3) Product Summary Part Number IRHNMC57110 IRHNMC53110 Radiation Level RDS(on) I D 100K Rads (Si) 0.22Ω 6.9A 300K Rads (Si) 0.22Ω 6.9A QPL Part Number JANSR2N7503U8C JANSF2N7503U8C SMD-0.2 ( CERAMIC LID ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2012 10 www.irf.com