UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. *Pb-free plating product number: MMBTH10L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTH10-x-AE3-C-R MMBTH10L-x-AE3-C-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING 3E www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-003,E MMBTH10 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation Collector current SYMBOL VCBO VCEO VEBO PC IC RATINGS 30 25 3 225 50 UNIT V V V mW mA Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100μA Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Base Breakdown Voltage BVEBO IE=10μA Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400μA Base-Emitter on Voltage VBE(ON) VCE=10V, IC=4mA Collector Cut-off Current ICBO VCB=25V Emitter Cut-off Current IEBO VEB=2V DC Current Gain hFE VCE=10V, IC=4mA Output Capacitance Cob VCB=10V, f=1MHZ Current Gain Bandwidth Product fT VCE=10V, IC=4mA, f=100MHz MIN 30 25 3 TYP MAX 500 950 100 100 UNIT V V V mV mV nA nA 60 0.7 650 pF MHz CLASSIFICATION OF hFE RANK RANGE A 60-100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 90-130 C 120-200 2 of 5 QW-R206-003,E MMBTH10 Base Emitter Voltage, VBE(SAT) (V) Base Emitter On Voltage, VBE(ON)(V) Typical Pulsed Current Gain, hFE Collector-Emitter Voltage, VCE(SAT) (V) TYPICAL CHARACTERISTICS Power Dissipation, PD (mW) Collector-Cutoff Current Vs Ambient Temperature 10 Collector Current, ICBO (nA) NPN SILICON TRANSISTOR VCB=30V 1 0.1 25 350 300 250 200 150 100 50 0 50 75 100 125 150 Ambient Temperature, TA (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power Dissipation Vs Ambient Temperautre 0 25 50 75 100 125 150 Temperature (℃) 3 of 5 QW-R206-003,E MMBTH10 Input Admittance 24 VCE=10V Ic=2mA 20 gie 16 12 bie 8 4 0 0 200 500 1000 Frequency, f (MHz) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Output Admittance, |Yoe| (mmhos) Forward Admittance, |Yfb| (mmhos) Reverse Admittance, |Yrb| (mmhos) Input Admittance, |Yib| (mmhos) Output Admittance, |Yob| (mmhos) TYPICAL CHARACTERISTICS(Cont.) Input Admittance, |Yie| (mmhos) NPN SILICON TRANSISTOR Output Admittance 6 VCE=10V Ic=2mA 5 4 boe 3 2 1 goe 0 0 200 500 1000 Frequency, f (MHz) 4 of 5 QW-R206-003,E MMBTH10 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) 60 40 Forward Transfer Admittance VCE=10V Ic=2mA gfe Reverse Transfer Admittance 1.2 VCE=10V Ic=2mA 1 20 0.8 -bre 0 0.6 -20 0.4 -40 -60 100 0.2 bfe 200 500 1000 Frequency, f (MHz) 0 -gre 0 200 500 1000 Frequency, f (MHz) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R206-003,E