UTC MMBTH10L-B-AE3-E-R Rf transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBTH10
NPN SILICON TRANSISTOR
RF TRANSISTOR
„
DESCRIPTION
The UTC MMBTH10 is designed for using as VHF and UHF
oscillators and VHF Mixer in a tuner of a TV receiver.
*Pb-free plating product number: MMBTH10L
„
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBTH10-x-AE3-C-R
MMBTH10L-x-AE3-C-R
„
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
3E
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Copyright © 2005 Unisonic Technologies Co., Ltd
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„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation
Collector current
SYMBOL
VCBO
VCEO
VEBO
PC
IC
RATINGS
30
25
3
225
50
UNIT
V
V
V
mW
mA
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=100μA
Collector-Emitter Breakdown Voltage BVCEO IC=1mA
Emitter-Base Breakdown Voltage
BVEBO IE=10μA
Collector-Emitter Saturation Voltage
VCE(SAT) IC=4mA, IB=400μA
Base-Emitter on Voltage
VBE(ON) VCE=10V, IC=4mA
Collector Cut-off Current
ICBO
VCB=25V
Emitter Cut-off Current
IEBO
VEB=2V
DC Current Gain
hFE
VCE=10V, IC=4mA
Output Capacitance
Cob
VCB=10V, f=1MHZ
Current Gain Bandwidth Product
fT
VCE=10V, IC=4mA, f=100MHz
„
MIN
30
25
3
TYP
MAX
500
950
100
100
UNIT
V
V
V
mV
mV
nA
nA
60
0.7
650
pF
MHz
CLASSIFICATION OF hFE
RANK
RANGE
A
60-100
UNISONIC TECHNOLOGIES CO., LTD
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B
90-130
C
120-200
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Base Emitter Voltage, VBE(SAT) (V)
Base Emitter On Voltage, VBE(ON)(V)
Typical Pulsed Current Gain, hFE
Collector-Emitter Voltage, VCE(SAT) (V)
TYPICAL CHARACTERISTICS
Power Dissipation, PD (mW)
Collector-Cutoff Current Vs
Ambient Temperature
10
Collector Current, ICBO (nA)
„
NPN SILICON TRANSISTOR
VCB=30V
1
0.1
25
350
300
250
200
150
100
50
0
50
75
100
125
150
Ambient Temperature, TA (℃)
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Power Dissipation Vs Ambient
Temperautre
0
25
50
75
100
125
150
Temperature (℃)
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Input Admittance
24
VCE=10V
Ic=2mA
20
gie
16
12
bie
8
4
0
0
200
500
1000
Frequency, f (MHz)
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Output Admittance, |Yoe| (mmhos)
Forward Admittance, |Yfb| (mmhos)
Reverse Admittance, |Yrb| (mmhos)
Input Admittance, |Yib| (mmhos)
Output Admittance, |Yob| (mmhos)
TYPICAL CHARACTERISTICS(Cont.)
Input Admittance, |Yie| (mmhos)
„
NPN SILICON TRANSISTOR
Output Admittance
6
VCE=10V
Ic=2mA
5
4
boe
3
2
1
goe
0
0
200
500
1000
Frequency, f (MHz)
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
60
40
Forward Transfer Admittance
VCE=10V
Ic=2mA
gfe
Reverse Transfer Admittance
1.2
VCE=10V
Ic=2mA
1
20
0.8
-bre
0
0.6
-20
0.4
-40
-60
100
0.2
bfe
200
500
1000
Frequency, f (MHz)
0
-gre
0
200
500
1000
Frequency, f (MHz)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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