IGBT FMC7G30US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A High input impedance Built in brake and 3 phase rectifier circuit Fast & soft anti-parallel FWD Package Code : 21PM-BA P P1 GU GV GW R Applications B EU EV EW S U V W -GV -GW T • • • • AC & DC motor controls General purpose inverters Robotics Servo controls GB N -GU E Internal Circuit Diagram Absolute Maximum Ratings Inverter & Brake Converter Common Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25°C Pulsed Collector Current Diode Continuous Forward Current @ TC = 100°C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C Short Circuit Withstand Time @ TC = 100°C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive FMC7G30US60 600 ± 20 30 60 30 60 125 10 1200 30 Units V V A A A A W us V A 300 A 369 A2s I2t TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C VISO Isolation Voltage Mounting part Screw 2500 1.25 V N.m Mounting Torque 1 Cycle Surge Current @ AC 1minute @ M4 Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation FMC7G30US60 Rev. A3 FMC7G30US60 October 2001 Symbol Parameter Test Conditions C = 25°C unless otherwise noted Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 30mA, VCE = VGE IC = 30A, VGE = 15V 5.0 -- 6.0 2.2 8.5 2.8 V V ---- 1970 310 74 ---- pF pF pF --------------- 30 65 54 138 0.92 0.82 1.74 34 67 60 281 0.93 1.56 2.49 --80 200 --2.4 --90 400 --3.4 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC = 30A, VGE = 15V ---- 85 17 39 120 25 55 nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2001 Fairchild Semiconductor Corporation VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = FMC7G30US60 Rev. A3 FMC7G30US60 Electrical Characteristics of the IGBT @ Inverter & Brake T Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge Test Conditions TC = 25°C IF = 30A TC = 100°C IF = 30A di / dt = 60 A/us Parameter VFM Diode Forward Voltage IRRM Repetitive Reverse Current Typ. 2.0 Max. 2.8 -- 2.0 -- -- 90 180 TC = 100°C -- 130 -- TC = 25°C -- 2.2 3.4 TC = 100°C -- 3.4 -- TC = 25°C -- 400 600 TC = 100°C -- 880 -- C Units V ns A nC = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 30A TC = 100°C VR = VRRM = 25°C unless otherwise noted TC = 25°C Electrical Characteristics of the DIODE @ Converter T Symbol C Min. -- Min. -- Typ. 1.1 Max. 1.5 -- 1.0 -- TC = 25°C -- -- 8 TC = 100°C -- 5 -- Units V mA Thermal Characteristics Inverter Brake Converter Weight Symbol RθJC RθJC RθJC RθJC RθJC ©2001 Fairchild Semiconductor Corporation Parameter Junction-to-Case (IGBT Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Junction-to-Case (IGBT Part) Junction-to-Case (DIODE Part) Junction-to-Case (DIODE Part, per 1/6 Module) Weight of Module Typ. -----270 Max. 1.0 2.2 1.0 2.2 2.0 -- Units °C/W °C/W °C/W °C/W °C/W g FMC7G30US60 Rev. A3 FMC7G30US60 Electrical Characteristics of the DIODE @ Inverter & Brake T 20V 15V 70 Collector Current, IC [A] Common Emitter VGE = 15V T C = 25℃ ━━ T C = 125℃ ------ 80 Collector Current, IC [A] Common Emitter TC = 25℃ 80 60 12V 50 40 30 VGE = 10V 70 60 50 40 30 20 20 10 10 0 0 0 2 4 6 1 8 Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 40 Common Emitter V GE = 15V VCC = 300V Load Current : peak of square wave 35 60A 4 30 45A 3 30A 2 IC = 15A Load Current [A] Collector - Emitter Voltage, V CE [V] FMC7G30US60 90 90 25 20 15 10 1 Duty cycle : 50% TC = 100℃ Power Dissipation = 45W 5 0 0 -50 0 50 100 0.1 150 1 10 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 1000 Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 25℃ Common Emitter T C = 125℃ Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] 100 Frequency [KHz] Case Temperature, T C [℃] 16 12 8 4 30A 60A 16 12 8 60A 4 30A IC = 15A IC = 15A 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation 20 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FMC7G30US60 Rev. A3 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 3000 Common Emitter VCC = 300V, VGE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Cies 2500 Switching Time [ns] Capacitance [pF] FMC7G30US60 1000 3500 2000 Coes 1500 1000 Ton Tr 100 Cres 500 10 0 1 1 10 10 Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 7. Capacitance Characteristics 10000 Common Emitter V CC = 300V, V GE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Common Emitter V CC = 300V, VGE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Switching Loss [uJ] Switching Time [ns] 1000 100 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, V CE [V] Toff Toff Tf Eon Eoff 1000 Eoff Tf 100 100 1 10 1 100 10 Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 1000 Common Emitter V GE = ± 15V, RG = 7Ω T C = 25℃ ━━ T C = 125℃ ------ Switching Time [ns] Common Emitter V GE = ± 15V, RG = 7 Ω T C = 25℃ ━━ T C = 125℃ ------ Switching Time [ns] 100 Gate Resistance, R G [ Ω ] Ton Tr 100 Toff Tf Toff 100 Tf 10 15 30 45 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation 60 15 30 45 60 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FMC7G30US60 Rev. A3 15 Eoff Eon Eoff 1000 Common Emitter RL = 10 Ω TC = 25℃ 12 Gate - Emitter Voltage, VGE [ V ] Common Emitter VGE = ± 15V, RG = 7 Ω TC = 25℃ ━━ TC = 125℃ ------ Switching Loss [uJ] FMC7G30US60 10000 300 V V CC = 100 V 200 V 9 6 3 100 0 15 30 45 60 0 20 Collector Current, IC [A] 40 60 80 100 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 200 100 IC MAX. (Pulsed) 100 Collector Current, IC [A] Collector Current, IC [A] 50us IC MAX. (Continuous) 100us 1㎳ 10 DC Operation Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 1 Safe Operating Area V GE = 20V, T C = 100℃ 0.1 0.3 1 10 10 100 1 1000 1 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 100 Thermal Response, Zthjc [℃/W] Collector Current, I C [A] 5 10 1 0.1 Single Nonrepetitive Pulse TJ ≤ 125℃ VGE = 15V RG = 7 Ω 0 100 200 0.1 0.01 300 400 500 Collector-Emitter Voltage, VCE [V] Fig 17. RBSOA Characteristics ©2001 Fairchild Semiconductor Corporation 1 600 700 IGBT : DIODE : 0.005 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 18. Transient Thermal Impedance FMC7G30US60 Rev. A3 80 Forward Current, I F [A] 70 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns] Common Cathode V GE = 0V T C = 25℃ T C = 125℃ 60 50 40 30 20 10 0 0 1 2 Forward Voltage, V F [V] Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation 3 4 T rr 10 Irr Common Cathode di/dt = 60A/us TC = 25℃ TC = 100℃ 1 0.5 5 10 15 20 25 30 Forward Current, IF [A] Fig 20. Reverse Recovery Characteristics FMC7G30US60 Rev. A3 FMC7G30US60 20 90 FMC7G30US60 Package Dimension 21PM-BA (FS PKG CODE BK) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation FMC7G30US60 Rev. A3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4