BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Solder dip 260 °C, 40 s • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in generell purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V to 1600 V IFSM 30 A IR 1.0 µA MECHANICAL DATA Case: DO-214AC (SMA) VF 1.15 V Epoxy meets UL 94 V-0 flammability rating ER 20 mJ TJ max. 150 °C Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC-Q101 qualified), meets JESD 201 class 2 whisker test Note: • BYG10Y for commercial grade only Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y 200 400 600 800 1000 1600 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A ER 20 mJ TJ, TSTG - 55 to + 150 °C Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C (for BYG10D-BYG10M) Operating junction and storage temperature range Document Number: 88957 Revision: 03-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 BYG10D thru BYG10Y Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT Maximum instantaneous forward voltage (1) IF = 1 A IF = 1.5 A TJ = 25 °C VF 1.1 1.15 V Maximum DC reverse current VR = VRRM TJ = 25 °C TJ = 100 °C IR 1 10 µA Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 4 µs Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to lead BYG10D BYG10G BYG10J RθJL BYG10K BYG10M BYG10Y 25 UNIT °C/W (1) Typical thermal resistance, junction to ambient 150 125 (2) 100 (3) RθJA °C/W Notes: (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu (3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu ORDERING INFORMATION (Example) UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG10D-E3/TR PREFERRED P/N 0.064 TR 1800 7" diameter plastic tape and reel BYG10D-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG10DHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel BYG10DHE3/TR3 (1) 0.064 TR3 7500 13" diameter plastic tape and reel Note: (1) AEC-Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88957 Revision: 03-Jun-09 BYG10D thru BYG10Y Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 400 Reverse Power Dissipation (mW) 100 Forward Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 PR - Limit at 100 % VR 300 250 200 150 PR - Limit at 80 % VR 100 50 0 0.001 0 0.5 1.0 1.5 2.0 2.5 25 3.0 50 75 100 125 150 Forward Voltage (V) Junction Temperature (°C) Figure 1. Forward Current vs. Forward Voltage Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature 1.6 30 1.4 f = 1 MHz VR = VRRM Half Sine-Wave RθJA ≤ 25 K/W 1.2 25 Diode Capacitance (pF) Average Forward Current (A) VR = VRRM 350 1.0 0.8 0.6 0.4 RθJA ≤ 125 K/W RθJA ≤ 150 K/W 0.2 20 15 10 5 0 0 0 20 40 60 80 100 120 140 0.1 160 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 5. Diode Capacitance vs. Reverse Voltage 1000 5000 TA = 125 °C Reverse Recovery Time (ns) Reverse Current (µA) VR = VRRM 100 10 4000 TA = 100 °C 3000 TA = 75 °C TA = 50 °C 2000 TA = 25 °C 1000 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (°C) Forward Current (A) Figure 3. Reverse Current vs. Junction Temperature Figure 6. Reverse Recovery Time vs. Forward Current Document Number: 88957 Revision: 03-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BYG10D thru BYG10Y Vishay General Semiconductor Reverse Recovery Charge (nC) 2000 TA = 125 °C 1600 TA = 100 °C 1200 TA = 75 °C TA = 50 °C 800 TA = 25 °C 400 IR = 0.5 A, iR = 0.125 A 0 0 0.2 0.4 0.6 0.8 1.0 Forward Current (A) Figure 7. Reverse Recovery Charge vs. Forward Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88957 Revision: 03-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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