Sanyo LE25FU406B 4m-bit (512kã 8) serial flash memory Datasheet

Ordering number : ENA1066E
LE25FU406B
CMOS IC
4M-bit (512K×8) Serial Flash Memory
Overview
The LE25FU406B is a serial interface-compatible flash memory device with a 512K × 8-bit configuration. It uses a
single 2.5V power supply for both reading and writing (program and erase functions) and does not require a special
power supply. As such, it can support on-board programming. It has three erase functions, each of which corresponds to
the size of the memory area in which the data is to be erased at one time: the small sector (4K bytes) erase function, the
sector (64K bytes) erase function, and the chip erase function (for erasing all the data together). The memory space can
be efficiently utilized by selecting one of these functions depending on the application. A page program method is
supported for data writing. The page program method of the LE25FU406B can program any amount of data from 1 to
256 bytes. The program time of 2.0ms (typ.) when programming 256 bytes (1 page) at one time makes for fast data
writing. While making the most of the features inherent to a serial flash memory device, the LE25FU406B is housed in
an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed,
but the LE25FU406B has maximally eliminated this speed-related disadvantage by supporting clocks with frequencies up
to 30MHz under SPI bus specifications. All these features make this device ideally suited to storing program codes in
applications such as portable information devices and small disk systems, which are required to have increasingly more
compact dimensions.
Features
• Read/write operations enabled by single 2.5V power supply: 2.30 to 3.60V supply voltage range
• Operating frequency
: 30MHz
50MHz (at the planning stage)
• Temperature range
: 0 to 70°C
–40 to +85°C (at the planning stage)
• Serial interface
: SPI mode 0, mode 3 supported
• Sector size
: 4K bytes/small sector, 64K bytes/sector
• Data retention period
: 20 years
Continued on next page.
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by
SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
10511 SY/63010 SY 20100621-S00013/20310 SY 20100128-S00002 / D1609 SY / 70908 SY IM / 41608 SY IM No.A1066-1/21
LE25FU406B
Continued from preceding page.
• Small sector erase, sector erase, chip erase functions
• Page program function (256 bytes/page)
• Block protect function
• Highly reliable read/write
Number of rewrite times : 100,000 times
Small sector erase time : 40ms (typ.), 150ms (max.)
Sector erase time
: 80ms (typ.), 250ms (max.)
Chip erase time
: 200ms (typ.), 2.0s (max.)
Page program time
: 2.0ms/256 bytes (typ.), 2.5ms/256 bytes (max.)
• Status functions
Ready/busy information, protect information
• Package
: LE25FU406BTT MSOP8 (225mil)
: LE25FU406BMA MFP8 (225mil)
: LE25FU406BLF VSON8N (6.0mm × 5.0mm)
: LE25FU406BMB SOP8K (200mil)
Package Dimensions
Package Dimensions
unit:mm (typ)
3276
unit:mm (typ)
3032E
[LE25FU406BTT]
[LE25FU406BMA]
5.2
5.0
5
8
1
4
0.35
2
1.27
(1.5)
0.1
0.08
SANYO : MFP8(225mil)
SANYO : MSOP8(225mil)
Package Dimensions
Package Dimensions
unit:mm (typ)
3391
[LE25FU406BLF]
TOP VIEW
0.15
0.35
1.7 MAX
0.125
(0.65)
1.27
(0.6)
0.85max
1
(0.7)
0.63
0.5
4.4
6.4
4.4
6.3
8
SIDE VIEW
unit:mm (typ)
3398
[LE25FU406BMB]
4.9
BOTTOM VIEW
8
5.0
8
Exposed Die-Pad
Do Not Connect
3.9
6.0
0.6
0.7
(3.4)
6.0
(4.0)
1
(0.595)
(0.55)
0.2
0.4
(1.5)
0.4
2
1.27
SANYO : VSON8N(6.0x5.0)
0.15
(0.8)
SIDE VIEW
0.85 MAX
1.27
1
1.75 MAX
2
2
0.0 NOM
1
SANYO : SOP8K(200mil)
No.A1066-2/21
LE25FU406B
Figure 1 Pin Assignments
CS
1
8
VDD
CS 1
8 VDD
SO
2
7
HOLD
SO 2
7 HOLD
WP
3
6
SCK
WP 3
6 SCK
VSS
4
5
SI
5 SI
VSS 4
Top view
Top view
VSON8 (LE25FU406BLF)
MSOP8 (LE25FU406BTT)
MFP8 (LE25FU406BMA)
SOP8K (LE25FU406BMB)
Figure 2 Block Diagram
4M Bit
Flash EEPROM
Cell Array
XDECODER
ADDRESS
BUFFERS
&
LATCHES
Y-DECODER
I/O BUFFERS
&
DATA LATCHES
CONTROL
LOGIC
SERIAL INTERFACE
CS
SCK
SI
SO
WP
HOLD
Table 1 Pin Description
Symbol
SCK
Pin Name
Serial clock
Description
This pin controls the data input/output timing.
The input data and addresses are latched synchronized to the rising edge of the serial clock, and the data is
output synchronized to the falling edge of the serial clock.
SI
Serial data input
The data and addresses are input from this pin, and latched internally synchronized to the rising edge of the
SO
Serial data output
The data stored inside the device is output from this pin synchronized to the falling edge of the serial clock.
CS
Chip select
serial clock.
The device becomes active when the logic level of this pin is low; it is deselected and placed in standby
status when the logic level of the pin is high.
WP
Write protect
The status register write protect (SRWP) takes effect when the logic level of this pin is low.
HOLD
Hold
Serial communication is suspended when the logic level of this pin is low.
VDD
Power supply
This pin supplies the 2.30 to 3.60V supply voltage.
VSS
Ground
This pin supplies the 0V supply voltage.
No.A1066-3/21
LE25FU406B
Table 2 Command Settings
Command
Read
1st bus cycle
2nd bus cycle
3rd bus cycle
4th bus cycle
03h
A23-A16
A15-A8
A7-A0
0Bh
A23-A16
A15-A8
A7-A0
Small sector erase
D7h
A23-A16
A15-A8
A7-A0
Sector erase
D8h
A23-A16
A15-A8
A7-A0
Chip erase
C7h
Page program
02h
A23-A16
A15-A8
A7-A0
Write enable
06h
X
A7-A0
Write disable
04h
Power down
B9h
Status register read
05h
Status register write
01h
Read silicon ID 1 *2
9Fh
Read silicon ID 2 *3
ABh
Exit power down mode
ABh
5th bus cycle
6th bus cycle
Nth bus cycle
PD *1
PD *1
X
PD *1
DATA
X
Explanatory notes for Table 2
"X" signifies "don't care" (that is to say, any value may be input).
The "h" following each code indicates that the number given is in hexadecimal notation.
Addresses A23 to A19 for all commands are "Don't care".
In order for commands other than the read command to be recognized, CS must rise after all the bus cycle input.
*1: "PD" stands for page program data. Any amount of data from 1 to 256 bytes in 1-byte unit is input.
*2: Of the two silicon ID commands, it is for the command with the 9Fh setting that the manufacturer code 62h is first
output. For as long as the clock input is continued, 1Eh of the device code is output continuously, followed by the
repeated output of 62h and 1Eh.
*3: Of the two silicon ID commands, it is for the command with the ABh setting that manufacturer code 62h is first
output when address A0 is "0", and the device code 1Eh is first output when address A0 is "1".
Addresses A7 to A1 are "don't care". For as long as the clock input is continued, 62h and 1Eh are repeatedly
output.
No.A1066-4/21
LE25FU406B
Device Operation
The LE25FU406B features electrical on-chip erase functions using a single 2.5V power supply, that have been added to
the EPROM functions of the industry standard that support serial interfaces. Interfacing and control are facilitated by
incorporating the command registers inside the chip. The read, erase, program and other required functions of the
device are executed through the command registers. The command addresses and data input in accordance with "Table
2 Command Settings" are latched inside the device in order to execute the required operations. "Figure 3 Serial Input
Timing" shows the timing waveforms of the serial data input. First, at the falling CS edge the device is selected, and
serial input is enabled for the commands, addresses, etc. These inputs are introduced internally in sequence starting with
bit 7 in synchronization with the rising SCK edge. At this time, output pin SO is in the high-impedance state. The
output pin is placed in the low-impedance state when the data is output in sequence starting with bit 7 synchronized to
the falling clock edge during read, status register read and silicon ID. Refer to "Figure 4 Serial Output Timing" for the
serial output timing.
The LE25FU406B supports both serial interface SPI mode 0 and SPI mode 3. At the falling CS edge, SPI mode 0 is
automatically selected if the logic level of SCK is low, and SPI mode 3 is automatically selected if the logic level of
SCK is high.
Figure 3 Serial Input Timing
tCPH
CS
tCLS
tCLHI
tCSS
tCLLO tCSH
tCLH
SCK
tDS
SI
SO
tDH
DATA VALID
High Impedance
High Impedance
Figure 4 Serial Output Timing
CS
SCK
tCLZ
SO
tHO
tCHZ
DATA VALID
tV
SI
No.A1066-5/21
LE25FU406B
Description of Commands and Their Operations
"Table 2 Command Settings" provides a list and overview of the commands. A detailed description of the functions and
operations corresponding to each command is presented below.
1. Read
There are two read commands, the 4 bus cycle read command and 5 bus cycle read command. Consisting of the first
through fourth bus cycles, the 4 bus cycle read command inputs the 24-bit addresses following (03h), and the data in the
designated addresses is output synchronized to SCK. The data is output from SO on the falling clock edge of fourth bus
cycle bit 0 as a reference. "Figure 5-a 4 Bus Read" shows the timing waveforms.
Consisting of the first through fifth bus cycles, the 5 bus cycle read command inputs the 24-bit addresses and 8 dummy
bits following (0Bh). The data is output from SO using the falling clock edge of fifth bus cycle bit 0 as a reference.
"Figure 5-b 5 Bus Read" shows the timing waveforms. The only difference between these two commands is whether the
dummy bits in the fifth bus cycle are input.
When SCK is input continuously after the read command has been input and the data in the designated addresses has
been output, the address is automatically incremented inside the device while SCK is being input, and the corresponding
data is output in sequence. If the SCK input is continued after the internal address arrives at the highest address
(7FFFFh), the internal address returns to the lowest address (00000h), and data output is continued. By setting the logic
level of CS to high, the device is deselected, and the read cycle ends. While the device is deselected, the output pin SO
is in a high-impedance state.
Figure 5-a 4 Bus Read
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
Mode0
8CLK
SI
03h
Add.
Add.
Add.
N
High Impedance
SO
DATA
MSB
N+1
N+2
DATA
DATA
MSB
MSB
Figure 5-b 5 Bus Read
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55
Mode0
8CLK
SI
SO
0Bh
Add.
High Impedance
Add.
Add.
X
N
N+1
N+2
DATA
DATA
DATA
MSB
MSB
MSB
No.A1066-6/21
LE25FU406B
2. Status Registers
The status registers hold the operating and setting statuses inside the device, and this information can be read (status
register read) and the protect information can be rewritten (status register write). There are 8 bits in total, and "Table 3
Status registers" gives the significance of each bit.
Table 3 Status Registers
Bit
Bit0
Bit1
Bit2
Name
RDY
WEN
Logic
Function
0
Ready
Power-on Time Information
1
Erase/Program
0
Write disabled
1
Write enabled
0
0
BP0
0
Nonvolatile information
1
Bit3
Bit4
BP1
0
Block protect information
1
See status register descriptions on BP0, BP1, and BP2.
0
BP2
Nonvolatile information
Nonvolatile information
1
Bit5
Reserved bits
Bit6
Bit7
0
0
SRWP
0
Status register write enabled
1
Status register write disabled
Nonvolatile information
2-1. Status register read
The contents of the status registers can be read using the status register read command. This command can be executed
even during the following operations.
• Small sector erase, sector erase, chip erase
• Page program
• Status register write
"Figure 6 Status Register Read" shows the timing waveforms of status register read. Consisting only of the first bus
cycle, the status register command outputs the contents of the status registers synchronized to the falling edge of the
clock (SCK) with which the eighth bit of (05h) has been input. In terms of the output sequence, SRWP (bit 7) is the first
to be output, and each time one clock is input, all the other bits up to RDY (bit 0) are output in sequence, synchronized
to the falling clock edge. If the clock input is continued after RDY (bit 0) has been output, the data is output by
returning to the bit (SRWP) that was first output, after which the output is repeated for as long as the clock input is
continued. The data can be read by the status register read command at any time (even during a program or erase cycle).
Figure 6 Status Register Read
CS
Mode 3
SCK
0 1 2 3 4 5 6 7 8
15 16
23
Mode 0
8CLK
SI
SO
05h
High Impedance
DATA
MSB
DATA
MSB
DATA
MSB
No.A1066-7/21
LE25FU406B
2-2. Status register write
The information in status registers BP0, BP1, BP2 and SRWP can be rewritten using the status register write command.
RDY, WEN, bit 5, and bit 6 are read-only bits and cannot be rewritten. The information in bits BP0, BP1, BP2, and
SRWP is stored in the non-volatile memory, and when it is written in these bits, the contents are retained even at powerdown. "Figure 7 Status Register Write" shows the timing waveforms of status register write, and Figure 20 shows a
status register write flowchart. Consisting of the first and second bus cycles, the status register write command initiates
the internal write operation at the rising CS edge after the data has been input following (01h). Erase and program are
performed automatically inside the device by status register write so that erasing or other processing is unnecessary
before executing the command. By the operation of this command, the information in bits BP0, BP1, BP2, and SRWP
can be rewritten. Since bits RDY (bit 0), WEN (bit 1), 4, 5, and 6 of the status register cannot be written, no problem
will arise if an attempt is made to set them to any value when rewriting the status register. Status register write ends can
be detected by RDY of status register read. Information in the status registers can be rewritten 1,000 times (min.). To
initiate status register write, the logic level of the WP pin must be set high and status register WEN must be set to "1".
Figure 7 Status Register Write
Self-timed
Write Cycle
tSRW
CS
tWPH
tWPS
WP
Mode3
SCK
0 1 2 3 4 5 6 7 8
15
Mode0
8CLK
SI
SO
01h
DATA
High Impedance
2-3. Contents of each status register
RDY (bit 0)
The RDY register is for detecting the write (program, erase and status register write) end. When it is "1", the device is
in a busy state, and when it is "0", it means that write is completed.
No.A1066-8/21
LE25FU406B
WEN (bit 1)
The WEN register is for detecting whether the device can perform write operations. If it is set to "0", the device will not
perform the write operation even if the write command is input. If it is set to "1", the device can perform write
operations in any area that is not block-protected.
WEN can be controlled using the write enable and write disable commands. By inputting the write enable command
(06h), WEN can be set to "1"; by inputting the write disable command (04h), it can be set to "0." In the following states,
WEN is automatically set to "0" in order to protect against unintentional writing.
• At power-on
• Upon completion of small sector erase, sector erase or chip erase
• Upon completion of page program
• Upon completion of status register write
* If a write operation has not been performed inside the LE25FU406B because, for instance, the command input for any
of the write operations (small sector erase, sector erase, chip erase, page program, or status register write) has failed or
a write operation has been performed for a protected address, WEN will retain the status established prior to the issue
of the command concerned. Furthermore, its state will not be changed by a read operation.
BP0, BP1, BP2 (bits 2, 3, 4)
Block protect BP0, BP1, and BP2 are status register bits that can be rewritten, and the memory space to be protected
can be set depending on these bits. For the setting conditions, refer to "Table 4 Protect level setting conditions".
Table 4 Protect Level Setting Conditions
Status Register Bits
Protect Level
Protected Area
BP2
BP1
BP0
0 (Whole area unprotected)
0
0
0
None
1 (1/8 protected)
0
0
1
70000h to 7FFFFh
2 (1/4 protected)
0
1
0
60000h to 7FFFFh
3 (1/2 protected)
0
1
1
40000h to 7FFFFh
4 (Whole area protected)
1
0
0
00000h to 7FFFFh
4 (Whole area protected)
1
0
1
00000h to 7FFFFh
4 (Whole area protected)
1
1
0
00000h to 7FFFFh
4 (Whole area protected)
1
1
1
00000h to 7FFFFh
* Chip erase is enabled only when the protect level is 0.
SRWP (bit 7)
Status register write protect SRWP is the bit for protecting the status registers, and its information can be rewritten.
When SRWP is "1" and the logic level of the WP pin is low, the status register write command is ignored, and status
registers BP0, BP1, BP2, and SRWP are protected. When the logic level of the WP pin is high, the status registers are
not protected regardless of the SRWP state. The SRWP setting conditions are shown in "Table 5 SRWP setting
conditions".
Table 5 SRWP Setting Conditions
WP Pin
0
1
SRWP
Status Register Protect State
0
Unprotected
1
Protected
0
Unprotected
1
Unprotected
Bits 5 and 6 are reserved bits, and have no significance.
No.A1066-9/21
LE25FU406B
3. Write Enable
Before performing any of the operations listed below, the device must be placed in the write enable state. Operation is
the same as for setting status register WEN to "1", and the state is enabled by inputting the write enable command.
"Figure 8 Write Enable" shows the timing waveforms when the write enable operation is performed. The write enable
command consists only of the first bus cycle, and it is initiated by inputting (06h).
• Small sector erase, sector erase, chip erase
• Page program
• Status register write
4. Write Disable
The write disable command sets status register WEN to "0" to prohibit unintentional writing. "Figure 9 Write Disable"
shows the timing waveforms. The write disable command consists only of the first bus cycle, and it is initiated by
inputting (04h). The write disable state (WEN "0") is exited by setting WEN to "1" using the write enable command
(06h).
Figure 8 Write Enable
Figure 9 Write Disable
CS
CS
Mode3
SCK
Mode3
0 1 2 3 4 5 6 7
SCK
Mode0
8CLK
SI
8CLK
SI
06h
High Impedance
SO
0 1 2 3 4 5 6 7
Mode0
04h
High Impedance
SO
5. Power-down
The power-down command sets all the commands, with the exception of the silicon ID read command and the
command to exit from power-down, to the acceptance prohibited state (power-down). "Figure 10 Power-down" shows
the timing waveforms. The power-down command consists only of the first bus cycle, and it is initiated by inputting
(B9h). However, a power-down command issued during an internal write operation will be ignored. The power-down
state is exited using the power-down exit command (power-down is exited also when one bus cycle or more of the
silicon ID read command (ABh) has been input). "Figure 11 Exiting from Power-down" shows the timing waveforms of
the power-down exit command.
Figure 10 Power-down
Figure 11 Exiting from Power-down
Power down
mode
Power down
mode
CS
CS
tPRB
tDP
Mode3
SCK
Mode3
0 1 2 3 4 5 6 7
SCK
Mode0
8CLK
SI
SO
B9h
High Impedance
0 1 2 3 4 5 6 7
Mode0
8CLK
SI
SO
ABh
High Impedance
No.A1066-10/21
LE25FU406B
6. Small Sector Erase
Small sector erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists of
4Kbytes. "Figure 12 Small Sector Erase" shows the timing waveforms, and Figure 21 shows a small sector erase
flowchart. The small sector erase command consists of the first through fourth bus cycles, and it is initiated by inputting
the 24-bit addresses following (D7h). Addresses A18 to A12 are valid, and Addresses A23 to A19 are "don't care".
After the command has been input, the internal erase operation starts from the rising CS edge, and it ends automatically
by the control exercised by the internal timer. Erase end can also be detected using status register RDY.
Figure 12 Small Sector Erase
Self-timed
Erase Cycle
tSSE
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
Mode0
8CLK
SI
D7h
Add.
Add.
Add.
High Impedance
SO
7. Sector Erase
Sector erase is an operation that sets the memory cell data in any sector to "1". A sector consists of 64Kbytes. "Figure
13 Sector Erase" shows the timing waveforms, and Figure 21 shows a sector erase flowchart. The sector erase command
consists of the first through fourth bus cycles, and it is initiated by inputting the 24-bit addresses following (D8h).
Addresses A18 to A16 are valid, and Addresses A23 to A19 are "don't care". After the command has been input, the
internal erase operation starts from the rising CS edge, and it ends automatically by the control exercised by the internal
timer. Erase end can also be detected using status register RDY.
Figure 13 Sector Erase
Self-timed
Erase Cycle
tSE
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31
Mode0
8CLK
SI
SO
D8h
Add.
Add.
Add.
High Impedance
No.A1066-11/21
LE25FU406B
8. Chip Erase
Chip erase is an operation that sets the memory cell data in all the sectors to "1". "Figure 14 Chip Erase" shows the
timing waveforms, and Figure 21 shows a chip erase flowchart. The chip erase command consists only of the first bus
cycle, and it is initiated by inputting (C7h). After the command has been input, the internal erase operation starts from
the rising CS edge, and it ends automatically by the control exercised by the internal timer. Erase end can also be
detected using status register RDY.
Figure 14 Chip Erase
Self-timed
Erase Cycle
tCHE
CS
Mode3
SCK
0 1 2 3 4 5 6 7
Mode0
8CLK
SI
C7h
High Impedance
SO
9. Page Program
Page program is an operation that programs any number of bytes from 1 to 256 bytes within the same sector page (page
addresses: A18 to A8). Before initiating page program, the data on the page concerned must be erased using small
sector erase, sector erase, or chip erase. "Figure 15 Page Program" shows the page program timing waveforms, and
Figure 22 shows a page program flowchart. After the falling CS, edge, the command (02H) is input followed by the 24bit addresses. Addresses A18 to A0 are valid. The program data is then loaded at each rising clock edge until the rising
CS edge, and data loading is continued until the rising CS edge. If the data loaded has exceeded 256 bytes, the 256
bytes loaded last are programmed. The program data must be loaded in 1-byte increments, and the program operation is
not performed at the rising CS edge occurring at any other timing. The page program time is 2.0ms (typ.) when 256
bytes (1 page) are programmed at one time.
Figure 15 Page Program
Self-timed
Program Cycle
tPP
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
2079
Mode0
8CLK
SI
SO
02h
Add.
Add.
Add.
PD
PD
PD
High Impedance
No.A1066-12/21
LE25FU406B
10. Silicon ID Read
Silicon ID read is an operation that reads the manufacturer code and device code information. "Table 6 Silicon ID codes
table" lists the silicon ID codes. The silicon ID read command is not accepted during writing.
Two methods are used for silicon ID reading. The first method involves inputting the 9Fh command: the setting is
completed with only the first bus cycle input, and in subsequent bus cycles the manufacturer code 62h and device code
1Eh are repeatedly output in succession so long as the clock input is continued. Refer to "Figure 16-a Silicon ID read 1"
for the waveforms.
The second method involves inputting the ABh command. This command consists of the first through fourth bus cycles,
and the silicon ID can be read when 16 dummy bits and an 8-bit address are input after (ABh). When address A0 is "0",
the manufacturer code 62h is read in the fifth bus cycle, and the device code 1Eh is read in the sixth bus cycle. "Figure
16-b Silicon ID read 2" shows the timing waveforms. If, after the manufacturer code or device code has been read, the
SCK input is continued, the manufacturer code and device code are output alternately with each bus cycle. When
address A0 is "1", reading starts with device code 1Eh in the fifth bus cycle.
Table 6 Silicon ID Codes
Address
Output Code
A0
Manufacturer code
0
62h
Device code
1
1Eh
The data is output starting with the falling clock edge of the fourth bus cycle bit 0, and silicon ID reading ends at the
rising CS edge.
Figure 16-a Silicon ID Read 1
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23
Mode0
8CLK
SI
9Fh
High Impedance
SO
N
N+1
N
SiID
SiID
SiID
MSB
MSB
MSB
Figure 16-b Silicon ID Read 2
CS
Mode3
SCK
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
Mode0
8CLK
SI
ABh
X
X
Add.
N
SO
High Impedance
SiID
MSB
N+1
SiID
MSB
N
SiID
MSB
No.A1066-13/21
LE25FU406B
11. Hold Function
Using the HOLD pin, the hold function suspends serial communication (it places it in the hold status). "Figure 17
HOLD" shows the timing waveforms. The device is placed in the hold status at the falling HOLD edge while the logic
level of SCK is low, and it exits from the hold status at the rising HOLD edge. When the logic level of SCK is high,
HOLD must not rise or fall. The hold function takes effect when the logic level of CS is low, the hold status is exited
and serial communication is reset at the rising CS edge. In the hold status, the SO output is in the high-impedance state,
and SI and SCK are "don't care".
Figure 17 HOLD
Active
CS
Active
HOLD
tHS
tHS
SCK
tHH
tHH
HOLD
tHHZ
tHLZ
High Impedance
SO
12. Power-on
In order to protect against unintentional writing, CS must be kept at VCC At power-on. After power-on, the supply
voltage has stabilized at 2.30V or higher, wait for 100μs (tPU_READ) before inputting the command to start a read
operation. Similarly, wait for 10ms (tPU_WRITE) after the voltage has stabilized before inputting the command to start
a write operation.
Figure 18 Power-on Timing
Program, Erase and Write Command not Allowed
Full Access Allowed
VDD
Chip selection not Allowed
Read Access Allowed
VDD(Max)
VDD(Min)
tPU_READ
tPU_WRITE
0V
No.A1066-14/21
LE25FU406B
13. Hardware Data Protection
In order to protect against unintentional writing at power-on, the LE25FU406B incorporates a power-on reset function.
The following conditions must be met in order to ensure that the power reset circuit will operate stably.
No guarantees are given for data in the event of an instantaneous power failure occurring during the writing period.
Figure 19 Power-down Timing
Program, Erase and Write Command not Allowed
VDD
VDD(Max)
No Device Access Allowed
VDD(Min)
tPU_READ
tPU_WRITE
tPD
0V
vBOT
14. Software Data Protection
The LE25FU406B eliminates the possibility of unintentional operations by not recognizing commands under the
following conditions.
• When a write command is input and the rising CS edge timing is not in a bus cycle (8 CLK units of SCK)
• When the page program data is not in 1-byte increments
• When the status register write command is input for 2 bus cycles or more
15. Decoupling Capacitor
A 0.1μF ceramic capacitor must be provided to each device and connected between VDD and VSS in order to ensure
that the device will operate stably.
No.A1066-15/21
LE25FU406B
Specifications
Absolute Maximum Ratings
Parameter
Symbol
Maximum supply voltage
DC voltage (all pins)
Storage temperature
Conditions
Ratings
unit
With respect to VSS
-0.5 to +4.6
With respect to VSS
-0.5 to VDD+0.5
V
-55 to +150
°C
Tstg
V
Operating Conditions
Parameter
Symbol
Conditions
Ratings
Operating supply voltage
unit
2.30 to 3.60
Operating ambient temperature
V
0 to 70
°C
-40 to +85 (at the planning stage)
Allowable DC Operating Conditions
Parameter
Symbol
Ratings
Conditions
min
Read mode operating current
ICCR
unit
typ
max
CS=0.1VDD, HOLD=WP=0.9VDD
SI=0.1VDD/0.9VDD, SO=open
operating frequency=30MHz,
Write mode operating current
ICCW
(erase+page program)
6
mA
15
mA
50
μA
VDD=VDD max
VDD=VDD max, tSSE=40ms,
tSE=80ms, tCHE=200ms,
tPP=2.5ms
CMOS standby current
ISB
Power-down standby current
IDSB
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
VDD=VDD max
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
10
μA
2
μA
2
μA
Input leakage current
ILI
VDD=VDD max
VIN=VSS to VDD, VDD=VDD max
Output leakage current
ILO
VIN=VSS to VDD, VDD=VDD max
Input low voltage
VIL
VDD=VDD max
-0.3
0.3VDD
V
Input high voltage
VIH
VDD=VDD min
0.7VDD
VDD+0.3
V
Output low voltage
VOL
IOL=100μA, VDD=VDD min
0.2
IOL=1.6mA, VDD=VDD min
0.4
Output high voltage
VOH
IOH=-100μA, VDD=VDD min
V
VCC-0.2
V
Power-on Timing
Parameter
Ratings
Symbol
min
unit
max
Time from power-on to read operation
tPU_READ
100
μs
Time from power-on to write operation
tPU_WRITE
10
ms
Power-down time
tPD
10
ms
Power-down voltage
vBOT
0.2
V
Pin Capacitance at Ta=25°C, f=1MHz
Parameter
Symbol
Conditions
Ratings
unit
max
Output pin capacitance
CDQ
VDQ=0V
12
pF
Input pin Capacitance
CIN
VIN=0V
6
pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values
for some of the sampled devices.
No.A1066-16/21
LE25FU406B
AC Characteristics
Parameter
Ratings
Symbol
min
unit
typ
max
Clock frequency
fCLK
SCK logic high level pulse width
tCLHI
16
30
MHz
SCK logic low level pulse width
tCLLO
16
Input signal rising/falling time
tRF
CS setup time
tCSS
10
SCK setup time
tCLS
10
ns
Data setup time
tDS
5
ns
Data hold time
tDH
5
ns
ns
ns
20
ns
ns
CS hold time
tCSH
10
ns
SCK hold time
tCLH
10
ns
CS wait pulse width
tCPH
25
ns
Output high impedance time from CS
tCHZ
Output data time from SCK
tV
Output data hold time
tHO
1
ns
HOLD setup time
tHS
7
ns
HOLD hold time
tHH
3
Output low impedance time from HOLD
tHLZ
9
ns
Output high impedance time from HOLD
tHHZ
9
ns
WP setup time
tWPS
20
ns
WP hold time
tWPH
20
ns
Write status register time
tSRW
15
10
ns
15
ns
ns
5
15
ms
ms
Page programming cycle time
tPP
2.0
2.5
Small sector erase cycle time
tSSE
0.04
0.15
s
Sector erase cycle time
tSE
0.08
0.25
s
0.2
Chip erase cycle time
tCHE
2.0
s
Power-down time
tDP
3
μs
Power-down recovery time
tPRB
3
μs
Output low impedance time from SCK
tCLZ
0
ns
AC Test Conditions
Input pulse level··············· 0V, 2.5V
Input rising/falling time···· 5ns
Input timing level············· 0.3VDD, 0.7VDD
Output timing level ·········· 1/2×VDD
Output load ······················ 30pF
Note: As the test conditions for "typ", the measurements are conducted using 2.5V for VDD at room temperature.
No.A1066-17/21
LE25FU406B
Figure 20 Status Register Write Flowchart
Status register write
Start
06h
01h
Write enable
Set status register write
command
Data
Program start on rising
edge of CS
05h
NO
Set status register read
command
Bit 0= “0” ?
YES
End of status register
write
* Automatically placed in write disabled state
at the end of the status register write
No.A1066-18/21
LE25FU406B
Figure 21 Erase Flowcharts
Small sector erase
Sector erase
Start
Start
06h
Write enable
06h
D8h
D7h
Address 1
NO
Address 1
Set small sector erase
command
Address 2
Address 2
Address 3
Address 3
Start erase on rising
edge of CS
Start erase on rising
edge of CS
Set status register read
command
05h
Write enable
05h
NO
Bit 0 = “0” ?
YES
End of erase
* Automatically placed in write disabled
state at the end of the erase
Set sector erase
command
Set status register read
command
Bit 0 = “0” ?
YES
End of erase
* Automatically placed in write disabled
state at the end of the erase
No.A1066-19/21
LE25FU406B
Figure 22 Page Program Flowchart
Page program
Chip erase
Start
Start
06h
06h
Write enable
C7h
Set chip erase
command
Write enable
02h
Address 1
Start erase on rising edge
of CS
05h
Set page program
command
Address 2
Address 3
Set status register read
command
Data 0
Bit 0 = “0” ?
Data n
YES
NO
Start program on rising
edge of CS
End of erase
* Automatically placed in write disabled state at
the end of the erase
Set status register read
command
05h
NO
Bit 0= “0” ?
YES
End of
programming
* Automatically placed in write disabled state at
the end of the programming operation.
No.A1066-20/21
LE25FU406B
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to change without notice.
PS No.A1066-21/21