NCP348 Positive Overvoltage Protection Controller with Internal Low RON NMOS FET and Status FLAG The NCP348 is able to disconnect the systems from its output pin in case wrong input operating conditions are detected. The system is positive overvoltage protected up to +28 V. Due to this device using internal NMOS, no external device is necessary, reducing the system cost and the PCB area of the application board. The NCP348 is able to instantaneously disconnect the output from the input, due to integrated Low RON Power NMOS (65 mW), if the input voltage exceeds the overvoltage threshold (6.4 V) or undervoltage threshold, of 3.25 V (UVLO). At powerup (EN pin = low level), the Vout turns on 50 ms after the Vin exceeds the undervoltage threshold. The NCP348 provides a negative going flag (FLAG) output, which alerts the system that a fault has occurred. In addition, the device has ESD−protected input (15 kV Air) when bypassed with a 1.0 mF or larger capacitor. Features • • • • • • • • • • • • Overvoltage Protection up to 28 V On−Chip Low RDS(on) NMOS Transistor: 65 mW Internal Charge Pump Overvoltage Lockout (OVLO) Undervoltage Lockout (UVLO) Internal 50 ms Startup Delay Alert FLAG Output Shutdown EN Input Compliance to IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) ESD Ratings: Machine Model = B Human Body Model = 3 10 Lead WDFN 2.5x2 mm Package This is a Pb−Free Device http://onsemi.com MARKING DIAGRAM BAIM G WDFN10 MT SUFFIX CASE 516AA BAI = Specific Device Code M = Date Code G = Pb−Free Package PIN CONNECTIONS IN 1 GND 2 FLAG 3 IN 4 IN 5 10 EN PAD1 GND PAD2 IN 9 NC 8 NC 7 OUT 6 OUT (Top View) ORDERING INFORMATION Device Package Shipping NCP348MTTBG WDFN−10 (Pb−Free) 3000 / Tape & Reel NCP348MTTXG WDFN−10 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Applications • • • • • Cell Phones Camera Phones Digital Still Cameras Personal Digital Applications MP3 Players QFN−16 © Semiconductor Components Industries, LLC, 2006 November, 2006 − Rev. 2 1 Publication Order Number: NCP348/D NCP348 VBat VBat D3 7011X/SM NCP1835B GND 1 mF 6 7 8 9 ISEL 8 4 270 K 4.7 mF VBat 3 TIMER NCP348 1 IN OUT 4 IN OUT 5 IN NC 10 NC EN FLAG ENABLE / 2 Microprocessor Wall Adapter − AC/DC 3 EN CFLG 2 FAULT V2P8 VSNS 1 VCC BAT 1M 6 7 9 10 GND 5 ENABLE / Microprocessor V2P8 VBat 100 nF Lithium BATTERY 15 pF 0 0 Figure 1. Typical Application Circuit INPUT OUTPUT 60 mA Output Impedance = 200 k ESD Protection Core Negative Protection Gate Driver Charge Pump Delay Generator ESD Protection 200 kHz Oscillator LDO VREG Power ON 10 V EN EN Block VREG UVLO VREF VREF UVLO OVLO VREF OVLO DISABLE Figure 2. Functional Block Diagram http://onsemi.com 2 FLAG ESD Protection NCP348 PIN FUNCTION DESCRIPTION Pin No. Symbol Function Description 1 4 5 IN POWER Input Voltage Pin. This pin is connected to the power supply. The device system core is supplied by this input. A 1 mF low ESR ceramic capacitor, or larger, must be connected between this pin and GND. The three IN pins must be hardwired to common supply. 2 GND POWER Ground 3 FLAG OUTPUT Fault Indication Pin. This pin allows an external system to detect a fault on IN pin. The FLAG pin goes low when input voltage exceeds OVLO threshold or drop below UVLO threshold. Since the FLAG pin is open drain functionality, an external pull up resistor to VCC must be added. 6 7 OUT OUTPUT Output Voltage Pin. This pin follows IN pin when “no fault” is detected. The output is disconnected from the Vin power supply when the input voltage is under the UVLO threshold or above OVLO threshold. The two OUT pins must be hardwired to common supply. 8 NC OPEN No Connect 9 NC OPEN No Connect 10 EN INPUT Enable Pin. The device enters in shutdown mode when this pin is tied to a high level. In this case the output is disconnected from the input. To allow normal functionality, the EN pin shall be connected to GND to a pull down or to a I/O pin. This pin does not have an impact on the fault detection. PAD1 PAD1, under the device. See PCB recommendations page 10. Can be shorted to GND. PAD2 The PAD2 is electrically connected to the internal NMOS drain and connected to Pins 4 and 5. See PCB recommendations page 10. MAXIMUM RATINGS Rating Symbol Value Unit Vminin −0.3 V Vmin −0.3 V Vmaxin 30 V Maximum Voltage (All others to GND) Vmax 7.0 V Maximum Current (UVLO<VIN<OVLO) Imax 2.0 A Thermal Resistance, Junction−to−Air (Note 1) Minimum Voltage (IN to GND) Minimum Voltage (All others to GND) Maximum Voltage (IN to GND) RqJA 280 °C/W Operating Ambient Temperature Range TA −40 to +85 °C Storage Temperature Range Tstg −65 to +150 °C Junction Operating Temperature TJ 150 °C ESD Withstand Voltage (IEC 61000−4−2) (input only) when bypassed with 1.0 mF capacitor Human Body Model (HBM), Model = 2 (Note 2) Machine Model (MM) Model = B (Note 3) Vesd 15 Air, 8.0 Contact 2000 200 kV V V Moisture Sensitivity MSL Level 1 − Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The RqJA is highly dependent on the PCB heat sink area (connected to pad 2). As example RqJA is 268 °C/W with 30 mm2 (copper 35 mm) and 189 °C/W with 400 mm2. 2. Human Body Model, 100 pF discharged through a 1.5 kW resistor following specification JESD22/A114. 3. Machine Model, 200 pF discharged through all pins following specification JESD22/A115. http://onsemi.com 3 NCP348 ELECTRICAL CHARACTERISTICS (Min/Max limits values (−40°C < TA < +85°C) and Vin = +5.0 V. Typical values are TA = +25°C, unless otherwise noted.) Characteristic Input Voltage Range Undervoltage Lockout Threshold (Note 4) Symbol Conditions Min Typ Max Unit Vin − 1.2 − 28 V UVLO − 3.00 3.25 3.5 V UVLOhyst − 20 50 100 mV OVLO Vin rises up OVLO threshold 6.00 6.4 6.8 V OVLOhyst − 50 100 150 mV Vin versus Vout Resistance RDS(on) Vin = 5.0 V, EN = GND, Load connected to Vout − 65 120 mW Disable Quiescent Current Idddis Vin = 5.0 V, EN = 1.2 V, Load connected to Vout − 6.0 20 mA Supply Quiescent Current Idd No load. EN = 5.0 V − 90 150 mA No load. EN = Gnd − 170 250 mA Undervoltage Lockout Hysteresis Overvoltage Lockout Threshold (Note 4) Overvoltage Lockout Hysteresis UVLO Supply Current Idduvlo VIN = 2.9 V − 70 100 mA FLAG Output Low Voltage Volflag 1.2 V < VIN < UVLO Sink 50 mA on/FLAG pin − 20 400 mV VIN > OVLO Sink 1.0 mA on FLAG pin − − 400 mV FLAGleak FLAG level = 5.0 V − 1.0 − nA EN Voltage High Vih − 1.2 − − V EN Voltage Low Vol − − − 0.4 V ENleak EN = 5.0 V or GND − 1.0 − nA ton From Vin > UVLO to Vout = 0.3 V (See Figures 3 & 7) 30 55 70 ms FLAG Going Up Delay tstart From Vout = 0.3 V to FLAG = 1.2 V (See Figures 3 & 9) 30 50 70 ms Output Turn Off Time toff From Vin > OVLO to Vout < = 0.3 V (See Figures 4 & 8) Vin increasing from 5.0 V to 8.0 V at 3.0 V/ms Rload connected on Vout − 1.5 5.0 ms Alert Delay tstop From Vin > OVLO to FLAG < = 0.4 V (See Figures 4 & 10) Vin increasing from 5.0 V to 8.0 V at 3.0 V/ms Rload connected on Vout − 1.0 − ms Disable Time tdis From EN > = 1.2 V to Vout < 0.3 V Rload = 5.0 W (See Figures 5 & 12) − 1.0 5.0 ms FLAG Leakage Current EN Leakage Current TIMINGS Startup Delay NOTE: Electrical parameters are guaranteed by correlation across the full range of temperature. 4. Additional UVLO and OVLO thresholds ranging from UVLO and from OVLO can be manufactured. Contact your ON Semiconductor representative for availability. http://onsemi.com 4 NCP348 TIMING DIAGRAMS <OVLO UVLO Vin ton Vout Vin − (RDS(on) 0.3 V OVLO Vin Vout I) Vin − (RDS(on) toff I) 0.3 V tstart FLAG tstop 1.2 V FLAG 0.4 V Figure 3. Startup Figure 4. Shutdown on Overvoltage Detection 1.2 V EN 1.2 V EN Vout Vin − (RDS(on) Vin OVLO tdis UVLO I) FLAG 0.3 V 100 ms FLAG Figure 5. Disable on EN = 1 Figure 6. FLAG Response with EN = 1 http://onsemi.com 5 NCP348 TYPICAL OPERATING CHARACTERISTICS Figure 7. Startup Vin = Ch1, Vout = Ch3 Figure 8. Output Turn Off Time Vin = Ch1, Vout = Ch2 Figure 9. FLAG Going Up Delay Vout = Ch3, FLAG = Ch2 Figure 10. Alert Delay Vout = Ch1, FLAG = Ch3 Figure 11. Initial Overvoltage Delay Vin = Ch1, Vout = Ch2, FLAG = Ch3 Figure 12. Disable Time EN = Ch1, Vout = Ch2, FLAG = Ch3 http://onsemi.com 6 NCP348 TYPICAL OPERATING CHARACTERISTICS Figure 13. Inrush Current with Cout = 100 mF, I charge = 1 A, Output Wall Adaptor Inductance 1 mH Figure 14. Output Short Circuit Figure 15. Output Short Circuit (Zoom Fig. 14) http://onsemi.com 7 NCP348 CONDITIONS IN OUT VIN > OVLO 0 < VIN < UVLO And/Or VOLTAGE DETECTION /EN = 1 Figure 16. Simplified Diagram CONDITIONS IN OUT /EN = 0 & UVLO < VIN < OVLO VOLTAGE DETECTION Figure 17. Simplified Diagram Operation overtaking undervoltage UVLO (Figure 3). The NCP348 provides a FLAG output, which alerts the system that a fault has occurred. A 50 ms additional delay, regarding available output (Figure 3) is added between output signal rising up and to FLAG signal rising up. FLAG pin is an open drain output. The NCP348 provides overvoltage protection for positive voltage, up to 28 V. A Low RDS(on) NMOS FET protects the systems (i.e.: charger) connected on the Vout pin, against positive overvoltage. At powerup, with EN pin = low, the output is rising up 50 ms after the input http://onsemi.com 8 NCP348 Vout = 0 FLAG = Low Reset Timer Vin < UVLO or Vin > OVLO Vout = 0 FLAG = Low Timer Count OVLO > Vin > UVLO T < 50 ms Timer Check T = 50 ms Reset Timer Vin < UVLO or Vin > OVLO Check Vin FLAG = Low Timer Count UVLO < Vin < OVLO EN = 1 EN = 0 Check EN Vout = Open Vin < UVLO or Vin > OVLO Vout = Vin T < 50 ms Timer Check T = 50 ms Check EN UVLO < Vin < OVLO EN = 1 UVLO < Vin < OVLO EN = 0 Vout = Vin FLAG = High Check Vin Vout = Open FLAG = High Check Vin Vin < UVLO or Vin > OVLO Figure 18. State Machine http://onsemi.com 9 NCP348 As example: Rload = 8.0 W, Vin = 5.0 V Typical RDS(on) = 65 mW, Iout = 618 mA Undervoltage Lockout (UVLO) To ensure proper operation under any conditions, the device has a built−in undervoltage lockout (UVLO) circuit. During Vin positive going slope, the output remains disconnected from input until Vin voltage is below 3.25 V, plus hysteresis, nominal. The FLAG output is tied to low as long as Vin does not reach UVLO threshold. This circuit has a 50 mV hysteresis to provide noise immunity to transient condition. Additional UVLO thresholds ranging from UVLO can be manufactured. Contact your ON Semiconductor representative for availability. Vout = 8 x 0.618 = 4.95 V NMOS losses = RDS(on) x Iout2 = 0.065 x 0.6182 = 25 mW ESD Tests The NCP348 input pin fully supports the IEC61000−4−2. 1.0 mF (minimum) must be connected between Vin and GND, close to the device. That means, in Air condition, Vin has a "15 kV ESD protected input. In Contact condition, Vin has "8.0 kV ESD protected input. Please refer to Figure 19 to see the IEC 61000−4−2 electrostatic discharge waveform. Overvoltage Lockout (OVLO) To protect connected systems on Vout pin from overvoltage, the device has a built−in overvoltage lockout (OVLO) circuit. During overvoltage condition, the output remains disabled as long as the input voltage exceeds 6.4 V typical. Additional OVLO thresholds ranging from OVLO can be manufactured. Contact your ON Semiconductor representative for availability. FLAG output is tied to low until Vin is higher than OVLO. This circuit has a 100 mV hysteresis to provide noise immunity to transient conditions. FLAG Output The NCP348 provides a FLAG output, which alerts external systems that a fault has occurred. This pin is tied to low as soon the OVLO threshold is exceeded or when the Vin level is below the UVLO threshold. When Vin level recovers normal condition, FLAG is held high, keeping in mind that an additional 50 ms delay has been added between available output and FLAG = high. The pin is an open drain output, thus a pull up resistor (typically 1 MW, minimum 10 kW) must be added to Vbat. Minimum Vbat supply must be 2.5 V. The FLAG level will always reflects Vin status, even if the device is turned off (EN = 1). Figure 19. Electrostatic Discharge Waveform PCB Recommendations The NCP348 integrates a 2 amperes rated NMOS FET, and the PCB rules must be respected to properly evacuate the heat out of the silicon. The PAD1 is internally isolated from the active silicon and should preferably be connected to ground. The PAD2 of the NCP348 package is connected to the internal NMOS drain and can be used to increase the heat transfer if necessary from an applications standpoint. Depending upon the power dissipated in the application, one can either use the PCB tracks connected to Pins 4 and 5 to evacuate heat, or make profit of the PAD2 area to add extra copper surface to reduce the junction temperature (See Figure 20). Of course, in any case, this pad shall be not connected to any other potential. Figure 20 shows copper area according to RqJA and allows the design of the heat transfer plane connected to PAD2. EN Input To enable normal operation, the EN pin shall be forced to low or connected to ground. A high level on the pin, disconnects OUT pin from IN pin. EN does not overdrive an OVLO or UVLO fault. Internal NMOS FET The NCP348 includes an internal Low RDS(on) NMOS FET to protect the systems, connected on OUT pin, from positive overvoltage. Regarding electrical characteristics, the RDS(on), during normal operation, will create low losses on Vout pin. http://onsemi.com 10 NCP348 310 290 1 oz C.F. 270 1 oz Sim 2 oz C.F. qJA (°C/W) 250 2 oz Sim 230 1 210 190 2 175 150 0 25 50 75 100 125 150 175 200 225 250 275 300 325350 COPPER HEAT SPREADING AREA (mm2) Figure 21. Demo Board Layout Figure 20. INPUT 1 mF 25 V X5R 0603 Murata GRM188R61E105KA12D OUTPUT C1 1 IN 4 IN 5 IN 10 EN_Power EN 6 OUT 7 OUT NCP348 8 NC 9 NC EN FLAG 3 C2 100 nF 50 V X7R 0805 not necessary FLAG Power FLAG GND 2 R1 1M EN_State R2 100 k 3 2 1 J2 R3 2 1 100 k 1 GND FLAG_State Figure 22. Demo Board Schematic http://onsemi.com 11 F1 F2 F3 F4 2 NCP348 PACKAGE DIMENSIONS WDFN10, 2.5x2, 0.5P CASE 516AA−01 ISSUE A D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. B ÍÍÍ ÍÍÍ E PIN ONE REFERENCE DIM A A1 A3 b D D2 D3 e E E2 G G1 K L 0.10 C 2X 0.10 C 2X A3 0.10 C A 10X 0.08 C A1 C 0.10 C A B G1 2.50 D2 1 1.18 0.78 1.00 −−− 0.40 10X 0.95 K 5 E2 1.13 10 0.10 C A 0.30 0.58 L 8X MAX 0.80 0.05 SOLDERING FOOTPRINT* D3 0.05 C 10X SEATING PLANE MILLIMETERS MIN NOM 0.70 0.75 0.00 −−− 0.20 REF 0.20 0.25 2.50 BSC 0.97 1.08 0.57 0.68 0.50 BSC 2.00 BSC 0.80 0.90 3.75 BSC 3.50 BSC 0.20 −−− 0.20 0.30 b B 10X G 0.05 C 0.60 0.50 PITCH 6 e 10X 0.10 C A 0.05 C 0.05 B NOTE 3 1.45 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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