Mitsubishi CM75E3U-24H High power switching use insulated type Datasheet

MITSUBISHI IGBT MODULES
CM75E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
TC Measured
Point
A
B
E
F
U
H
G
J
C2E1
E2
C1
G2G2
CM
D
C
2 - Mounting
Holes
(6.5 Dia.)
L
M
3-M5 Nuts
P
Q
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
N
O
O
V
TAB #110 t = 0.5
P
S
R
T
E2
G2
C2E1
Features:
u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
C1
E2
Outline Drawing and Circuit Diagram
Dimensions
A
Inches
3.7
Millimeters
Inches
Millimeters
Application:
u Brake
M
0.47
12.0
N
0.53
13.5
48.0
O
0.1
2.5
24.0
P
0.63
16.0
0.28
7.0
Q
0.98
25.0
0.67
17.0
R
G
0.91
23.0
S
0.3
7.5
H
0.91
23.0
T
0.83
21.2
Type
Current Rating
Amperes
VCES
Volts (x 50)
J
0.43
11.0
U
0.16
4.0
CM
75
24
L
0.16
4.0
V
0.51
13.0
B
3.15±0.01
C
1.89
D
0.94
E
F
94.0
Dimensions
80.0±0.25
1.18 +0.04/-0.02 30.0 +1.0/-0.5
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75E3U-24H is a
1200V (VCES), 75 Ampere IGBT
Module.
Sep.1998
MITSUBISHI IGBT MODULES
CM75E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Symbol
CM75E3U-24H
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Storage Temperature
Collector Current (Tc = 25°C)
Volts
IC
75
Amperes
ICM
150*
Amperes
IE
75
Amperes
Peak Emitter Current**
IEM
150*
Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Pc
600
Watts
Peak Collector Current
Emitter Current** (Tc = 25°C)
Mounting Torque, M5 Main Terminal
–
2.5 ~ 3.5
N·m
Mounting Torque, M6 Mounting
–
3.5 ~ 4.5
N·m
–
310
Grams
Viso
2500
Vrms
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1
mA
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
4.5
6
7.5
Volts
–
2.9
3.7
Volts
–
Volts
–
nC
Gate-Emitter Threshold Voltage
VGE(th)
IC = 7.5mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C
IC = 75A, VGE = 15V, Tj = 125°C
–
QG
VCC = 600V, IC = 75A, VGE = 15V
–
Total Gate Charge
2.85
280
Emitter-Collector Voltage**
VEC
IE = 75A, VGE = 0V
–
–
3.2
Volts
Emitter-Collector Voltage
VFM
IF = 75A, Clamp Diode Part
–
–
3.2
Volts
Test Conditions
Min.
Typ.
Max.
–
–
VCE = 10V, VGE = 0V
–
–
–
–
VCC = 600V, IC = 75A,
–
–
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
11
Units
nF
3.7
nF
2.2
nF
100
ns
tr
VGE1 = VGE2 = 15V,
–
–
200
ns
td(off)
RG = 4.2Ω, Resistive
–
–
250
ns
tf
Load Switching Operation
–
–
350
ns
Diode Reverse Recovery Time**
trr
IE = 75A, diE/dt = -150A/µs
–
–
300
ns
Diode Reverse Recovery Charge**
Qrr
IE = 75A, diE/dt = -150A/µs
–
0.41
Diode Reverse Recovery Time
trr
IF = 75A, Clamp Diode Part
–
–
Diode Reverse Recovery Charge
Qrr
diF/dt = -150A/µs
–
0.41
–
µC
300
ns
–
µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Sep.1998
MITSUBISHI IGBT MODULES
CM75E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT Module
–
–
0.21
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi Module
–
–
0.47
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Clamp Diode Part
–
–
0.47
°C/W
Contact Thermal Resistance
Rth(c-f)
–
0.035
–
°C/W
Per Module, Thermal Grease Applied
OUTPUT CHARACTERISTICS
(TYPICAL)
150
150
12
VGE = 20V
100
11
75
10
50
9
25
8
125
100
75
50
25
0
0
0
2
4
6
8
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
10
4
8
12
16
0
20
25
50
75
100
125
150
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
10
102
Tj = 25°C
8
IC = 150A
6
IC = 75A
4
2
IC = 30A
0
0
4
8
12
16
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
15
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25oC
125
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
102
101
100
1.0
1.5
2.0
2.5
3.0
3.5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
VGE = 0V
101
Cies
Coes
100
Cres
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
Sep.1998
MITSUBISHI IGBT MODULES
CM75E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
td(on)
tr
100
100
101
101
100
102
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.21°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
100
10-1
100
102
101
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-2
101
Irr
COLLECTOR CURRENT, IC, (AMPERES)
10-3
101
trr
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
tf
102
101
di/dt = -150A/µsec
Tj = 25°C
td(off)
REVERSE RECOVERY TIME, trr, (ns)
SWITCHING TIME, (ns)
VCC = 600V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
GATE CHARGE, VGE
102
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
103
103
IC = 75A
VCC = 400V
15
VCC = 600V
10
5
0
0
100
200
300
400
GATE CHARGE, QG, (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.47°C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
Sep.1998
Similar pages