AO4425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4425 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4425 is Pb-free (meets ROHS & Sony 259 specifications). AO4425L is a Green Product ordering option. AO4425 and AO4425L are electrically identical. VDS (V) = -38V ID = -14A (VGS = -20V) RDS(ON) < 10mΩ (VGS = -20V) RDS(ON) < 11mΩ (VGS = -10V) ESD Rating: 4000V HBM SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±25 V -50 3.1 W 2 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -11 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -14 TA=25°C Power Dissipation A Maximum -38 RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W AO4425 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -38 IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -2 ID(ON) On state drain current VGS=-10V, VDS=-5V -50 RDS(ON) Static Drain-Source On-Resistance TJ=55°C µA VDS=0V, VGS=±25V ±10 µA -3.5 V TJ=125°C VGS=-10V, I D=-14A Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=-5V, ID=-14A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge nA ±1 gFS Crss -500 VDS=0V, VGS=±20V VGS=-20V, I D=-14A Output Capacitance Units -100 Zero Gate Voltage Drain Current Coss Max V VDS=-30V, VGS=0V IDSS IS Typ VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, I D=-14A -2.5 A 7.7 10 11 13.5 8.8 11 mΩ 1 V 4.2 A 43 mΩ S 0.71 3800 pF 560 pF 350 pF 7.5 Ω 63 nC 14.1 nC Qgd Gate Drain Charge 16.1 nC tD(on) Turn-On DelayTime 12.4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-10V, VDS=-20V, RL=1.35Ω, RGEN=3Ω 9.2 ns 97.5 ns 45.5 ns Body Diode Reverse Recovery Time IF=-14A, dI/dt=100A/µs 35 Body Diode Reverse Recovery Charge IF=-14A, dI/dt=100A/µs 33 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. -15 C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. -12.8 D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 -20V -10V -5V 25 20 -4.5V -ID(A) -ID (A) 20 -4V 15 -3.5V 10 0 2 3 125°C 25°C 5 VGS=-3V 1 15 10 5 0 VDS=-5V 25 4 0 5 2 2.5 -VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 10 Normalized On-Resistance 1.6 VGS=-10V 9 RDS(ON) (mΩ) 3 8 VGS=-20V 7 VGS=-10V ID = -14A 1.4 VGS=-20V ID = -14A 1.2 1 6 0 5 10 15 20 25 0.8 30 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -15 1.0E+01 20 -12.8 ID=-14A 1.0E+00 1.0E-01 15 -IS (A) RDS(ON) (mΩ) 25 125°C 10 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 25°C 1.0E-05 1.0E-06 5 4 8 12 16 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 20 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=-15V ID=-14A Ciss 4000 Capacitance (pF) -VGS (Volts) 8 6 4 3000 2000 2 1000 0 0 Coss Crss 0 10 20 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 70 0 20 30 -VDS (Volts) Figure 8: Capacitance Characteristics 40 10µs RDS(ON) limited 10 40 TJ(Max)=150°C TA=25°C 100µs 30 1ms Power (W) -ID (Amps) 10.0 10ms 0.1s 1.0 1s 10 TJ(Max)=150°C TA=25°C 10s DC 0.1 0.1 20 1 10 100 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) -15 10 ZθJA Normalized Transient Thermal Resistance 0.01 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W -12.8 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 T 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000