MITSUBISHI Nch POWER MOSFET FS2VS-12 HIGH-SPEED SWITCHING USE FS2VS-12 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 0 +0.3 –0 (1.5) 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) ................................................................ 6.4Ω ¡ID ............................................................................................ 2A 2.6 ± 0.4 4.5 0.8 e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Tch Tstg Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Conditions VGS = 0V VDS = 0V Typicla value Ratings Unit 600 ±30 V V 2 6 60 –55 ~ +150 –55 ~ +150 A A W °C °C 1.2 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS2VS-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω IS = 1A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 600 ±30 — — — — — — ±10 V V µA — 2 — — — 3 5.0 5.0 1 4 6.4 6.4 mA V Ω V 0.8 — — — 1.3 300 30 5 — — — — S pF pF pF — — — — 13 10 30 30 — — — — ns ns ns ns — 1.5 2.0 V — — 2.08 °C/W PERFORMANCE CURVES 80 60 40 20 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 0 50 100 150 101 7 5 3 2 100µs 100 7 5 3 2 1ms 10ms DC 10–1 7 5 3 2 10–2 200 tw=10µs TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) TC = 25°C Pulse Test VGS = 20V 10V 8V PD = 60W 4 3 6V 2 1 0 5V 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 2.0 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 5 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V TC = 25°C 6V 8V Pulse Test 1.6 1.2 0.8 5V 0.4 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS2VS-12 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 32 ID=3A 24 16 2A 8 1A 0 4 8 12 DRAIN CURRENT ID (A) 101 7 5 2 4 8 12 16 VDS = 10V Pulse Test 3 2 TC = 25°C 100 7 5 125°C 75°C 3 2 10–1 –1 10 20 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 Ciss 102 7 5 3 2 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 4 3 2 4 TRANSFER CHARACTERISTICS (TYPICAL) 6 7 5 6 0 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 20 TC = 25°C VDS = 50V Pulse Test 0 20V 8 DRAIN CURRENT ID (A) 8 0 VGS=10V TC=25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 CAPACITANCE Ciss, Coss, Crss (pF) 16 FORWARD TRANSFER ADMITTANCE yfs (S) 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC=25°C Pulse Test Coss 101 7 5 Tch=25°C Crss f=1MHz 3 VGS=0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 3 2 tf 102 7 5 3 2 101 7 5 10–1 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) td(on) tr 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS2VS-12 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 12 200V 400V 8 4 101 7 5 0 4 8 12 16 25°C 4 75°C 2 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 TC=125°C 6 GATE CHARGE Qg (nC) 3 2 10–1 VGS = 0V Pulse Test 8 0 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) 10 Tch = 25°C ID = 2A VDS = 100V –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10–1 7 5 3 2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999