NSR10404NXT5G 1 A, 40 V, Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 2 Features • • • • • • www.onsemi.com Low Forward Voltage Drop − 500 mV (Typ.) @ IF = 1.0 A Low Reverse Current − 10 mA (Typ.) @ VR = 40 V 1.0 A of Continuous Forward Current ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C High Switching Speed These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM PIN 1 1 4N Y = Specific Device Code = Year Code PIN CONNECTIONS Typical Applications • • • • • 4NM DSN2 (0402) CASE 152AE LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 CATHODE ORDERING INFORMATION Device MAXIMUM RATINGS NSR10404NXT5G Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Current (DC) IF 1.0 A Forward Surge Current IFSM (60 Hz @ 1 cycle) A Package Shipping† DSN2 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 12 Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 2.5 A ESD Rating: ESD >8 > 400 kV V Human Body Model Machine Model 2 ANODE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 1 1 Publication Order Number: NSR10404/D NSR10404NXT5G THERMAL CHARACTERISTICS Characteristic Max Unit RqJA PD 260 480 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 100 1.25 °C/W W Storage Temperature Range Tstg −40 to +125 °C Junction Temperature TJ +150 °C Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Symbol Min Typ 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 1000 R(t) (C/W) 100 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00000001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 1.0 10 100 1000 PULSE TIME (sec) Figure 1. Thermal Response (Note 1) 100 D = 0.5 0.2 R(t) (C/W) 10 1 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00000001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 NSR10404NXT5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max − − 1.0 10 10 40 − − − − − 150 270 345 435 500 190 300 380 460 550 Unit mA Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 0.1 mA) (IF = 10 mA) (IF = 100 mA) (IF = 500 mA) (IF = 1.0 A) VF Total Capacitance (VR = 2.0 V, f = 1.0 MHz) CT − 50 − pF Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 3) trr − 20 − ns VFRM − 503 − mV Peak Forward Recovery Voltage (IF = 100 mA, tr = 20 ns, Figure 4) mV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 W +10 V 2.0 k IF 100 mH tr 0.1 mF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 3. Recovery Time Equivalent Test Circuit IF VF tr VFRM VF Time Time Figure 4. Peak Forward Recover Voltage Definition www.onsemi.com 3 NSR10404NXT5G TYPICAL CHARACTERISTICS 100K 125°C IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (mA) 1000 100 150°C 90°C 10 25°C −40°C −55°C 1 0.1 150°C 1K 125°C 100 90°C 10 25°C 1 0.1 0.01 −40°C 0.001 −55°C 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 5. Forward Voltage Figure 6. Leakage Current 35 40 35 40 1000 1000 0.8 1.0 100 0.5 0.2 0.1 10 1 0.1 0 0.8 1.0 100 0.5 10 0.2 0.1 1 0.1 0 100 200 300 400 500 600 700 800 900 1K 5 10 15 20 25 30 IF, FORWARD CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 7. Average Forward Power Dissipation Figure 8. Average Reverse Power Dissipation 20 IFSM, FORWARD SURGE MAX CURRENT (A) 140 CT, TOTAL CAPACITANCE (pF) 5 VF, FORWARD VOLTAGE (V) PR, AVERAGE REVERSE POWER (mW) PF, AVERAGE FORWARD POWER (mW) 10K f = 1.0 MHz 120 100 80 60 40 20 0 0 5 10 15 20 25 30 35 18 16 14 12 10 8 6 4 Based on square wave currents TJ = 25°C prior to surge 2 0 0.001 40 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Tp, PULSE ON TIME (ms) Figure 9. Total Capacitance Figure 10. Forward Surge Maximum www.onsemi.com 4 1000 NSR10404NXT5G PACKAGE DIMENSIONS DSN2, 1.0x0.6, 0.65P, (0402) CASE 152AE ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 0.05 C A B D PIN 1 INDICATOR DIM A A1 b D E e L E 0.05 C TOP VIEW 0.05 C MILLIMETERS MIN MAX 0.25 0.31 −−− 0.05 0.45 0.55 1.00 BSC 0.60 BSC 0.65 BSC 0.20 0.30 A RECOMMENDED SOLDER FOOTPRINT* 0.05 C A1 C SEATING PLANE SIDE VIEW 1.20 2X 2X 0.47 0.60 e b e/2 PIN 1 0.05 M C A B DIMENSIONS: MILLIMETERS 1 2X L 0.05 See Application Note AND8398/D for more mounting details M C A B BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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