NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Input Capacitance Fast Switching Speed Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Low Input/Output Leakage Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) An Automotive-Compliant Part is Available Under Separate Datasheet (DMG2302UQ) SOT23 D D G Top View Ordering Information Top View Internal Schematic (Note 4) Part Number DMG2302U-7 Notes: S G S Case SOT23 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/ Marking Information Date Code Key Year Code Month Code 2009 W Jan 1 — — 2015 C Feb 2 DMG2302U Document number: DS31838 Rev. 5 - 3 2016 D Mar 3 2017 E Apr 4 G23 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: E = 2017) M = Month (ex: 9 = September) YM G23 2018 F May 5 2019 G Jun 6 1 of 6 www.diodes.com 2020 H Jul 7 2021 I Aug 8 2022 J Sep 9 2023 K Oct O 2024 L Nov N 2025 M Dec D October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMG2302U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C Steady State TA = +70°C Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6) Continuous Drain Current (Note 5) ID IDM Value 20 ±8 4.2 3.4 27 Unit V V Value 0.8 156 1.4 91 -55 to +150 Unit W °C/W W °C/W °C A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Steady State (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Steady State Symbol PD RθJA PD RθJA TJ, TSTG Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 100 ±100 V nA nA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) 0.4 — 1.0 V mΩ VDS = VGS, ID = 50μA VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = 5V, ID = 3.6A VGS = 0V, IS = 1A RDS(ON) — — 90 120 |Yfs| VSD — — 13 0.75 — 1.0 S V Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF — — — — — — — — — — — 594.3 64.5 57.7 1.5 7.0 0.9 1.4 7.4 9.8 28.1 6.7 — — — — — — — — — — — pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 3.6A VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1‖ x 1‖ FR-4 PCB with high coverage 2oz. copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMG2302U Document number: DS31838 Rev. 5 - 3 2 of 6 www.diodes.com October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U 10 DMG2302U 10 VGS = 8.0V VGS = 4.5V VGS = 3.0V VDS = 5V 8 VGS = 2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 ) A ( T N E 6 R R U C N IA 4 R D ,D I 2 VGS = 2.0V VGS = 1.5V 6 4 2 TA = 150°C TA = 125°C TA = 85°C VGS = 1.2V 0 3 0 ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N 0.055 0.05 0.045 0.04 VGS = 1.8V 0.035 0.03 VGS = 2.5V 0.025 VGS = 4.5V O ( S D 1 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.055 0.045 1.4 VGS = 2.5V ID = 5A VGS = 4.5V ID = 10A 1.0 0.8 0.6 -50 Document number: DS31838 Rev. 5 - 3 TA = 125°C 0.035 TA = 85°C 0.03 TA = 25°C 0.025 0.02 TA = -55°C 0.015 0.01 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (癈 (°C)) Fig. 5 On-Resistance Variation with Temperature DMG2302U TA = 150°C 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 VGS = 4.5V 0.05 10 1.8 1.2 2 0.06 R 0.02 0.1 0.5 1 1.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = -55°C 0 0 TA = 25°C 3 of 6 www.diodes.com 2 4 6 8 10 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.06 0.05 VGS = 2.5V ID = 5A 0.04 0.03 VGS = 4.5V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (癈 (°C)) Fig. 6 On-Resistance Variation with Temperature October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U 1.4 T (S G V 10 1.2 8 )A ( T N E R 6 R U C E C R 4 U O S ,S I 2 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) )V ( E G A T L O V D L O H S E R H T E T A G ,H ) DMG2302U 1.0 0.8 ID = 1mA 0.6 ID = 250µA 0.4 TA = 25°C 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 1,000 0.2 0.4 0.6 0.8 1.0 1.2 VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10000 IDSS, DRAI N LEAKAG E CURRENT (nA) TA = 150°C C, CAPACITANCE (pF) Ciss 100 Coss Crss f = 1MHz 100 10 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance TA = 125°C 1000 T A = 25°C 10 T A = -55°C 1 0 20 TA = 85°C 2 4 6 8 10 12 14 16 18 20 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current vs. Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 157癈 /W 157°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response DMG2302U Document number: DS31838 Rev. 5 - 3 4 of 6 www.diodes.com October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMG2302U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMG2302U Document number: DS31838 Rev. 5 - 3 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMG2302U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMG2302U Document number: DS31838 Rev. 5 - 3 6 of 6 www.diodes.com October 2017 © Diodes Incorporated