DMTH4004SPSQ Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features BVDSS RDS(ON) Max Qg Typ ID TC = +25°C 40V 2.7mΩ @ VGS = 10V 68.6nC 100A Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – Minimizes Power Losses Low Qg – Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC-DC Converters ® Case: PowerDI 5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 Pin1 Top View S D S D S D G D Internal Schematic Bottom View Top View Pin Configuration Ordering Information (Note 5) Part Number DMTH4004SPSQ-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking T4004SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 17 = 2017) WW = Week (01 to 53) T4004SS YY WW S S S G PowerDI is a registered trademark of Diodes Incorporated. DMTH4004SPSQ Document number: DS37562 Rev. 4 - 2 1 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH4004SPSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TC = +25°C TC = +100°C (Note 9) Continuous Drain Current (Note 6) Continuous Drain Current (Note 7) Value 40 ±20 31 26 100 ID ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.2mH Avalanche Energy, L=0.2mH Unit V V A A 100 IDM IS ISM IAS EAS 350 100 350 45 200 A A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 3.6 41 167 0.9 -55 to +175 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics Notes: TC = +25°C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge TA = +25°C Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 — — — 2.3 0.9 4 2.7 1.2 V mΩ V VDS = VGS, ID = 250μA VGS = 10V, ID = 90A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — 4,305 1,441 102 0.77 68.6 16.8 14.2 9.5 6.7 26.4 8.1 52.4 — — — — — — — — — — — — pF VDS = 25V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 20V, ID = 90A, VGS = 10V ns VDD = 20V, VGS = 10V, ID = 90A, RG = 3.5Ω QRR — 78.2 — ns nC Test Condition IF = 50A, di/dt = 100A/μs 6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady state. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMTH4004SPSQ Document number: DS37562 Rev. 4 - 2 2 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH4004SPSQ 150 VGS = 10.0V 30 VGS = 6.0V 25 120 VGS = 5.0V T A = 175°C I D, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VDS = 5.0V 90 VGS = 4.5V 60 30 20 T A = 150°C 5 2.50 VGS = 10V 2.40 2.30 2.20 2.10 2.00 10 30 50 70 90 110 130 150 170 190 210 ID , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) (mR) 2.60 T A = 25°C T A = -55°C 0 0 3 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 15 12 0.006 9 6 I D = 100A 3 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2.2 VGS = 10V 2 0.005 T A = 175°C R DS(ON), DRAIN-SOURCE O N-RESI STANCE (NORMALIZED) DRAIN-SOURCE ON-RESISTANCE ON-RESISTANCE ((m) ) RR D S(ON, ),DRAIN-SOURCE DS(ON) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) VGS = 3.5V 0.5 1 1.5 2 2.5 VDS , DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics TA = 85°C 10 VGS = 4.0V 0 0 T A = 125°C 15 T A = 150°C T A = 125°C 0.004 T A = 85°C 0.003 T A = 25°C T A = -55°C 0.002 0.001 0 10 30 50 70 90 110 130 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMTH4004SPSQ Document number: DS37562 Rev. 4 - 2 150 3 of 7 www.diodes.com 1.8 1.6 1.4 VGS = 10V 1.2 ID = 90A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature April 2017 © Diodes Incorporated DMTH4004SPSQ 4 V GS(TH), GATE THRESHOLD VOLTAGE (V) R DS(on ), DRAIN-SOURCE ON-RESISTANCE () 0.005 VGS = 10V 0.004 I D = 100A 0.003 0.002 0.001 0 -50 3 I D = 1mA 2.5 2 I D = 250µA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature -25 10000 150 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Temperature Ciss T A= 175°C CT , JUNCTION CAPACITANCE (pF) VGS=0V 120 IS, SOURCE CURRENT (A) 3.5 T A= 150°C 90 T A= 125° 25°CC 60 TA = 85° 25°C TA = 25°C 30 Coss 1000 C rss 100 f=1MHz TA = -55° 25°CC 0 0 0.3 0.6 0.9 1.2 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 1.5 10 0 5 10 15 20 25 30 35 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 1000 8 ID, DRAIN CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) RDS(ON) LIMITED VDS = 20V 6 I D = 90A 4 100 PW =1µs PW =10µs PW =100µs 10 PW =1ms PW =10ms TJ(MAX)=175℃ PW =100ms TC=25℃ Single Pulse PW =1s DUT on infinite heatsink VGS=10V 1 2 00 0.1 10 20 30 40 50 60 70 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMTH4004SPSQ Document number: DS37562 Rev. 4 - 2 4 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 April 2017 © Diodes Incorporated DMTH4004SPSQ r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthjc (t) = r(t) * Rthjc Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 Rthjc = 0.9°C/W Duty Cycle, D = t1/ t2 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance DMTH4004SPSQ Document number: DS37562 Rev. 4 - 2 5 of 7 www.diodes.com April 2017 © Diodes Incorporated DMTH4004SPSQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M M1 Detail A L1 G b3 (4X) PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 — b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 — — L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMTH4004SPSQ Document number: DS37562 Rev. 4 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 April 2017 © Diodes Incorporated DMTH4004SPSQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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