APT6017WVR
600V 31.5A 0.170Ω
POWER MOS V ®
TO-267
V®
Power MOS
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• New TO-267 Package
D
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6017WVR
UNIT
600
Volts
Drain-Source Voltage
31.5
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
450
Watts
Linear Derating Factor
3.6
W/°C
VGSM
PD
TJ,TSTG
126
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
31.5
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
Volts
31.5
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.170
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
UNIT
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5827 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT6017WVR
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
7500
9000
Coss
Output Capacitance
VDS = 25V
900
1260
Reverse Transfer Capacitance
f = 1 MHz
320
480
Crss
Qg
Total Gate Charge
Qgs
3
VGS = 10V
315
475
VDD = 0.5 VDSS
45
70
ID = ID[Cont.] @ 25°C
125
190
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
15
30
VDD = 0.5 VDSS
13
26
ID = ID[Cont.] @ 25°C
45
70
RG = 0.6Ω
5
10
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
Characteristic / Test Conditions
MIN
31.5
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
126
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
690
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
15.9
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.28
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 5.04mH, R = 25Ω, Peak I = 31.5A
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5827 Rev B
0.3
t1
0.01
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
°C/W
APT6017WVR
100
VGS=6V, 7V, 10V & 15V
5.5V
80
60
5V
40
4.5V
20
4V
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
TJ = +25°C
80
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
40
TJ = +125°C
20
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
32
24
16
8
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
4.5V
20
4V
1.6
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.4
VGS=10V
1.2
VGS=20V
1.0
0.8
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
1.2
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
40
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.5
5V
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
20
40
60
80
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
TJ = -55°C
60
5.5V
0
0
100
VGS=6V, 7V, 10V & 15V
80
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5827 Rev B
ID, DRAIN CURRENT (AMPERES)
100
APT6017WVR
30,000
10µS
100
OPERATION HERE
LIMITED BY RDS (ON)
50
100µS
1mS
10
5
10mS
100mS
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
DC
.1
VDS=120V
VDS=300V
12
VDS=480V
8
4
0
1,000
Crss
500
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
16
Coss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = I [Cont.]
D
5,000
100
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
Ciss
10,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
200
0
100
200
300
400
500
600
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
50
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-267 Package Outline
20.45 (.805)
20.20 (.795)
1.80 (.071)
1.25 (.049)
10.23 (.403)
10.10 (.398)
4.19 (.165)
3.95 (.156)
24.15 (.951)
23.60 (.929)
20.32 (.800)
20.07 (.790)
16.90 (.665)
16.40 (.646)
Drain
19.05 (.750)
12.70 (.500)
Source
Gate
4.20 (.165) BSC
1.65 (.065) Dia. Typ.
1.40 (.055) 3 Leads
050-5827 Rev B
7.40 (.291)
6.60 (.260)
5.00 (.197) BSC
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058