CEM8809 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 16A, RDS(ON) = 6.2mΩ @VGS = 10V. RDS(ON) = 9 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS D D D D 8 7 6 5 1 S 2 S 3 S 4 G TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 30 Units V Gate-Source Voltage VGS ±20 V ID 16 A IDM 60 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 50 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 4. 2010.Dec http://www.cetsemi.com Details are subject to change without notice . 1 CEM8809 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 8A 1 4.8 6.2 mΩ VGS = 4.5V, ID = 8A 6 9 mΩ Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1.0 MHz 2970 pF 600 pF 450 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 6.5A, VGS = 10V, RGEN = 4.7Ω 20 40 ns 13 26 ns ns 74 148 Turn-On Fall Time tf 24 48 ns Total Gate Charge Qg 72 94 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 24V, ID = 13A, VGS = 10V 8 nC 20 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 2.1A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 2.1 A 1.3 V CEM8809 10 20 8 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5V VGS=3V 6 4 2 16 12 8 25 C TJ=125 C 4 -55 C 0 0 0.2 0.4 0.6 0.8 0 1 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 2400 1800 1200 Coss 600 2 4 6 8 10 2.2 1.9 5 6 ID=16A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 VDS, Drain-to-Source Voltage (V) IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage Crss 1.2 3 Figure 2. Transfer Characteristics Ciss 1.3 2 Figure 1. Output Characteristics 3000 0 1 VGS, Gate-to-Source Voltage (V) 3600 0 0 VDS, Drain-to-Source Voltage (V) -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 V =24V DS ID=13A 10 6 4 2 0 0 2 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM8809 20 40 60 80 100 10 1 10 0 10 -1 10 -2 1ms 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 Single Pulse 10 -3 10 -4 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2