SeCoS BC212B Pnp plastic encapsulated transistor Datasheet

BC212
-0.1A , -60V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
TO-92
General Purpose Switching and Amplification.
CLASSIFICATION OF hFE
Product-Rank
BC212
BC212B
BC212C
Range
140~600
140~400
350~600
1 Emitter
2 Base
3 Collector
Base
2
3
REF.
Collector
A
B
C
D
E
1
Emitter
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
Millimeter
Min.
Max.
0.30
0.51
1.27 TYP.
1.10
1.40
2.42
2.66
0.36
0.76
REF.
F
G
H
J
K
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-60
-50
-5
-0.1
350
357
150, -55~150
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
BC212
DC Current Gain
BC212B
BC212C
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
-60
-50
-5
140
140
350
200
-
-15
-0.1
-15
600
400
600
-0.6
-1.2
-0.72
6
-
V
V
V
nA
µA
nA
http://www.SeCoSGmbH.com/
18-Dec-2012 Rev. A
hFE
VCE(sat)
VBE(sat)
VBE
Cob
fT
Test Conditions
IC= -0.01mA, IE=0
IC= -2mA, IB=0
IE= -0.01mA, IC=0
VCB= -30V, IE=0
VCE= -30V, IB=0
VEB= -4V, IC=0
VCE= -5V, IC= -2mA
V
V
V
pF
MHz
IC= -100mA, IB= -5mA
IC= -100mA, IB= -5mA
VCE = -5V, IC= -2mA
VCB= -10V, IC=0, f=1MHz
VCE= -5V, IC= -10mA, f=100MHz
Any changes of specification will not be informed individually.
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