SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A ᴌComplementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MAXIMUM RATING (Ta=25ᴱ) Voltage MPSA63/64 Collector-Emitter MPSA62 Voltage MPSA63/64 J -20 VCBO -30 -20 VCES -30 UNIT V V VEBO -10 V Collector Current IC -500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Emitter-Base Voltage Storage Temperature Range H F F 1 2 3 C MPSA62 RATING M Collector-Base SYMBOL L CHARACTERISTIC G D MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Collector-Emitter Breakdown Voltage MPSA62 Collector Cut-off Current MPSA62 MPSA63/64 MPSA63/64 SYMBOL V(BR)CES ICBO IEBO Emitter Cut-off Current TEST CONDITION MIN. TYP. MAX. -20 - - -30 - - - - -0.1 Ọ A - - -0.1 Ọ A 20,000 - - 5,000 - - 10,000 - - 10,000 - - 20,000 - - IC=-10mA, IB=-0.01mA - - -1.0 IC=-100mA, IB=-0.1mA - - -1.5 IC=-10mA, VCE=-5V - - -1.4 IC=-100mA, VCE=-5V - - -2.0 125 - - IC=-0.1mA, IB=0 VCB=-15V, IE=0 VCB=-30V, IE=0 VEB=-10V, IC=0 MPSA62 IC=-10mA, VCE=-5V MPSA63 DC Current Gain MPSA64 hFE MPSA63 IC=-100mA, VCE=-5V MPSA64 Collector-Emitter Saturation Voltage Base Emitter Voltage Current Gain Bandwith Product MPSA62 MPSA63/64 MPSA62 MPSA63/64 MPSA63/64 VCE(sat) VBE fT IC=-10mA, f=100MHz, VCE=-5V UNIT V V V MHz *Pulse Test : Pulse Width⏊300Ọ S, Duty Cycle⏊2% 1999. 11. 30 Revision No : 3 1/2 MPSA62/63/64 DC CURRENT GAIN h FE 1000k VCE =-5V 500k 300k 100k 50k 30k 10k 5k 3k 1k -3 -10 -30 -100 -300 -1k 100 50 30 10 5 3 VCE =-5V 1 -1 -3 -10 -30 -100 -300 VBE(sat) , VCE(sat) - I C V BE(on) - I C VBE(sat) -1 VCE(sat) -0.5 -0.3 -0.1 -0.05 -0.03 I C /I B =1000 -0.01 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) 1999. 11. 30 1k 500 300 COLLECTOR CURRENT I C (mA) -10 -5 -3 -1 f T - IC COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) SATURATION VOLTAGE VBE(sat) , VCE(sat) (V) -1 CURRENT GAIN BANDWIDTH PRODUCT f T (MHz) h FE - I C Revision No : 3 -1k -200 -1k VCE =-5V -100 -50 -30 -10 -5 -3 -1 0 -0.4 -0.8 -1.2 -1.6 -2.2 -2.6 BASE EMITTER VOLTAGE V BE (V) 2/2