yangjie MT60CB18T1 Thyristor/diode module Datasheet

MT60CB-T1
RoHS
COMPLIANT
Thyristor/Diode Modules
VRRM / VDRM
IFAV / ITAV
800 to 1800V
60Amp
Applications




Circuit
Features

1
2
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control

3


5
4


International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040

Module Type
TYPE
VRRM/VDRM
VRSM
MT60CB08T1
MT60CB12T1
MT60CB16T1
MT60CB18T1
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
Item
Conditions
ID
Output Current(D.C.)
Tc=85℃
IFSM
Surge forward current
t=10mS Tvj =45℃
2
it
Visol
Tvj
Tstg
Mt
Isolation Breakdown Voltage(R.M.S)
60
A
1500
A
11000
As
3000
V
-40 to +125
℃
a.c.50HZ;r.m.s.;1min
Operating Junction Temperature
-40 to +125
℃
3±15%
Nm
To heatsink(M6)
5±15%
Nm
100
g
Module(Approximately)
Thermal Impedance, max.
2
To terminals(M5)
Storage Temperature
Mounting Torque
Thermal Characteristics
Symbol
Item
Thermal
Impedance,
max.
Rth(j-c)
Rth(c-s)
Units
Circuit Fusing Consideration
Ms
Weight
Values
Values
Units
Junction to Case
Conditions
0.29
℃/W
Case to Heatsink
0.10
℃/W
Electrical Characteristics
Symbol
Item
VFM
Forward Voltage Drop, max.
IRRM
Repetitive Peak Reverse Current,
max.
S-M047
Rev.2.0, 27-May-17
Conditions
T=25℃ IF =200A
Tvj =25℃ VRD=VRRM
Tvj =125℃ VRD=VRRM
Values
Min.
Typ.
Max.
1.65
≤0.5
≤6
Units
V
mA
mA
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MT60CB-T1
◆Thyristor
Maximum Ratings
Symbol
Item
Conditions
RoHS
COMPLIANT
Values
Units
60
A
o
ITAV
Average On-State Current
Sine 180 ;Tc=85℃
ITSM
Surge On-State Current
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
1500
1250
A
Circuit Fusing Consideration
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
11000
8000
A2s
Isolation Breakdown Voltage(R.M.S)
a.c.50HZ;r.m.s.;1min
3000
V
Operating Junction Temperature
-40 to +125
℃
Storage Temperature
-40 to +125
℃
To terminals(M5)
3±15%
Nm
To heatsink(M6)
5±15%
Nm
2
it
Visol
Tvj
Tstg
Mt
Mounting Torque
Ms
di/dt
Critical Rate of Rise of On-State
Current
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
150
A/us
dv/dt
Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM ,2/3VDRM linear voltage rise
1000
V/us
a
Maximum allowable acceleration
50
m/s
Thermal Characteristics
Symbol
Item
Thermal Impedance, max.
Rth(j-c)
Rth(c-s)
Thermal Impedance, max.
Conditions
2
Values
Units
Junction to Case
0.57
℃/W
Case to Heatsink
0.20
℃/W
Electrical Characteristics
Symbol
Item
VTM
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
Conditions
Values
Min. Typ. Max.
Units
1.65
V
TVJ=TVJM ,VR=VRRM ,VD=
VDRM
15
mA
On state threshold voltage
For power-loss
calculations only
(TVJ =125℃)
0.9
V
Value of on-state
slope resistance. max
TVJ =TVJM
3.5
mΩ
VGT
Gate Trigger Voltage, max.
TVJ =25℃ , VD =6V
3.0
V
IGT
Gate Trigger Current, max.
TVJ =25℃ , VD =6V
150
mA
VGD
Non-triggering gate voltage, max.
TVJ=125℃,VD =2/3VDRM
0.25
V
IGD
Non-triggering gate current, max.
TVJ =125℃, VD =2/3VDRM
6
mA
IL
Latching current, max.
TVJ =25℃ , RG = 33 Ω
300
600
mA
IH
Holding current, max.
TVJ =25℃ , VD =6V
150
250
mA
tgd
Gate controlled delay time
TVJ=25℃,
IG=1A, diG/dt=1A/us
1
us
tq
Circuit commutated turn-off time
TVJ =TVJM
80
us
IRRM/IDRM
VTO
rT
S-M047
Rev.2.0, 27-May-17
T=25℃ IT =200A
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MT60CB-T1
RoHS
COMPLIANT
Performance Curves
90
100
A
sin.180
W
DC
rec.120
72
DC
75
rec.60
sin.180
54
rec.120
rec.30
50
rec.60
36
rec.30
25
18
PTAV
ITAVM
0
0
ITAV
25
25
0
A 75
0
Fig1. Power dissipation
Tc
50
℃ 130
100
Fig2.Forward Current Derating Curve
2000
1.0
50HZ
℃/ W
A
Zth(j-S)
Zth(j-C)
0.5
1000
0
0
0.001
t 0.01
0.1
1
10
S 100
10
Fig3. Transient thermal impedance
ms 1000
Fig4. Max Non-Repetitive Forward Surge
Current
250
A
100
Typ.
200
150
max.
100
25
25℃
- - -125℃
IT
0
0
VTM
0.5
1.0
1.5
2.0
V
2.5
Fig5. Forward Characteristics
S-M047
Rev.2.0, 27-May-17
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MT60CB-T1
RoHS
COMPLIANT
100
1/2·MT60CB18T1
V
20V;20Ω
15
0W
(0
10
10
(0
50
.5
W
(8
m
m
VGT
.1
m
s)
0W
s)
s)
∧
1
PG(tp)
-40℃
Tvj 25℃
125℃
VG
IGT
VGD125℃
IGD125℃
0.1
0.001
IG
0.01
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
YJ
Dimensions in mm
S-M047
Rev.2.0, 27-May-17
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