AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. AGR19125EU (unflanged) AGR19125EF (flanged) Figure 1. Available Packages Features Typical 2 carrier, N-CDMA performance for VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz, F2 = 1961.25 MHz, IS-95 (pilot, paging, sync, traffic channels 8—13) 1.2288 MHz channel bandwidth (BW). Adjacent channels measured over a 30 kHz BW at F1 – 0.885 MHz and F2 + 0.885 MHz. Intermodulation distortion products measured over a 1.2288 MHz BW at F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average (P/A) = 9.72 dB at 0.01% probability on CCDF: — Output power: 24 W. — Power gain: 15 dB. — Efficiency: 24%. — ACPR: –48 dBc. — IMD3: –34 dBc. — Return loss: –10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W continuous wave (CW) output power. Large signal impedance parameters available. Parameter Thermal Resistance, Junction to Case: AGR19125EU AGR19125EF Sym Value Unit Rı JC Rı JC 0.5 0.5 °C/W °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR19125EU AGR19125EF Derate Above 25 °C: AGR19125EU AGR19125EF Operating Junction Temperature Storage Temperature Range Sym Value Unit 65 Vdc VDSS VGS –0.5, +15 Vdc PD PD 350 350 W W — — TJ 2.0 2.0 200 W/°C W/°C °C TSTG –65, +150 °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR19125E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Symbol Min Typ Max Unit Drain-source Breakdown Voltage (VGS = 0, ID = 400 200 µA) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) V(BR)DSS IGSS IDSS 65 — — — — — — 4 200 12 Vdc µAdc µAdc Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 1200 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) GFS VGS(TH) VGS(Q) VDS(ON) — — — — 9 — 3.8 0.08 — 4.8 — — S Vdc Vdc Vdc Off Characteristics On Characteristics Table 5. RF Characteristics Parameter Symbol Min Typ Max U nit CRSS — 3.0 — pF Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Supplied Test Fixture) Functional Tests (in (in Agere Systems Supplied Test Fixture) Common-source Amplifier Power Gain* Drain Efficiency* Third-order Intermodulation Distortion* (IMD3 measured over 1.2288 MHz BW @ f1 – 2.5 MHz and f2 + 2.5 MHz) Adjacent Channel Power Ratio* (ACPR measured over BW of 30 kHz @ f1 – 0.885 MHz and f2 + 0.885 MHz) Input Return Loss* Power Output, 1 dB Compression Point (VDD = 28 V, fC = 1960.0 MHz) Output Mismatch Stress (VDD = 28 V, POUT = 125 W (CW), IDQ = 1250 mA, fC = 1960.0 MHz VSWR = 10:1; [all phase angles]) GPS η IM3 14 — — 15 24 –34 — — — dB % dBc ACPR — –48 — dBc IRL P1dB — — –10 125 — — dB W * IS-95 N-CDMA P/A = 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz. VDD = 28 Vdc, IDQ = 1250 mA, and POUT = 24 W avg. ψ No degradation in output power. AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Test Circuit Illustrations for AGR19125E FB1 VGG R1 VDD R3 R2 + C2 C3 C4 C5 Z7 C6 C7 C8 RF INPUT C1 Z2 Z3 Z4 Z5 C9 C10 C11 C12 C13 C14 C15 Z6 Z8 Z1 + + + 2 1 3 Z9 Z10 PINS: 1. DRAIN 2. GATE 3. SOURCE DUT Z11 C16 C17 Z13 RF OUTPUT A. Schematic Parts List: ? Microstrip Line: Z1 0.785 in. x 0.065 in. Z2 0.205 in. x 0.065 in. Z3 0.070 in. x 0.255 in. Z4 0.378 in. x 0.065 in. Z5 0.177 in. x 0.860 in. Z6 0.050 in. x 0.247 in. Z7 0.050 in. x 0.593 in. Z8 0.500 in. x 1.030 in. Z9 0.323 in. x 0.185 in. Z10 0.465 in. x 0.115 in. Z11 0.075 in. x 0.065 in. Z12 0.252 in. x 0.065 in. ® ? ATC chip capacitor: C1 10 pF 100B100JW500X C5, C14, C15: 5.6 pF100B5R6BW500X C9 6.8 pF 100B6R8JW500X C10 1.2 pF 100B1R2BW500X C16: 15 pF 100B150JW500X. ® ? Sprague tantalum surface-mount chip capacitor: C2, C4, C11, C12: 22 µF, 35 V. ® ? Kemet 1206 size chip capacitor: C6, C13: 0.1 µF C1206104K5RAC7800. ® ? Murata 0805 size chip capacitor: C8 0.01 µF GRM40X7R103K100AL. ® ? Johanson Giga-Trim variable capacitor: C17 0.6 pF to 4.5 pF 27271SL. ? 1206 size chip capacitor: C3, C7: 22000 pF. ? 1206 size chip resistor: R1 1 kΩ; R2 560 kΩ; R3 4.7 Ω. ® ? Fair-Rite ferrite bead: FB1 2743019447. ® ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. B. Component Layout Figure 2. AGR19125E Test Circuit AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor U CT 0.6 90 IN D 0. 8 0.1 0.4 20 50 20 10 5.0 4.0 3.0 2.0 1.6 1.8 1.4 1.2 50 1.0 0.9 0.7 0.8 0.5 0.6 0.4 0.3 0.2 0.1 0.2 20 ZL o) jB/ Y E (NC 0 1. A PT CE US ES DU IV CT IN 0 1.8 2. -110 0.11 -100 -90 0.13 0.36 0.12 0 -12 0.1 - 06 -70 0. 07 30 -1 43 0. 8 0.0 2 0.4 9 0.0 1 0.4 0.4 0.39 0.38 F 0.37 0.6 1.6 0.14 0.35 -60 1.4 1.2 5 -4 -80 0.8 1.0 0 -4 0.15 0.9 -70 - 6 4 -75 R 0.7 0.1 0.3 50 35 5 3 -60 -5 7 VE (-j 0 14 Z X/ 0.1 0.3 CA P AC I TI T 5 ,O o) 0.2 -30 32 CE CO M 0 -65 .5 18 0. RE AC TA N EN 0. 0 -5 -25 0. PO N 0. 0.4 0.0 0.6 0 3. -20 31 0. 19 0. 44 0.8 0 -15 4.0 4 0.0 0 -15 -80 0 0.4 0 1. 8 0.3 .45 2 0.2 0.2 0.2 0 -4 4 0. .29 ZS f1 1 -30 0.3 f3 5.0 -85 8 0. 0.2 0.2 6 0.6 -10 0.48 f1 0.4 -20 D< RD L OA TOW A 7 TH S 0.4 -170 EN G V EL A W <Ð -90 -160 0.2 f3 10 Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 0.49 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES 10 0.1 Z0 = 10 Ω L E OF ANG 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 ± 180 170 Typical Performance Characteristics MHz (f ) 1930 (f1) 1960 (f2) 1990 (f3) ZL Ω ZS Ω (Complex Source Impedance) (Complex Optimum Load Impedance) 4.22 – j6.13 1.63 – j1.42 4.02 – j5.80 1.60 – j1.19 3.91 – j5.55 1.74 – j1.18 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 0.0 120.0 -5.0 POUT 100.0 IRL, INPUT RETURN LOSS (dB)S POUT, OUTPUT POWER (W), EFFICIENCY (%)S 140.0 -10.0 80.0 -15.0 60.0 IRL -20.0 40.0 0.0 -25.0 EFFICIENCY 20.0 0.00 1.00 2.00 3.00 4.00 5.00 -30.0 6.00 PIN, INPUT POWER (W)S TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz. Figure 4. Output Power and Efficiency vs. Input Power 16.00 Gps, POWER GAIN (dB)S IDQ = 1500 mA 15.00 IDQ = 1250 mA 14.00 IDQ = 900 mA 13.00 12.00 1.00 10.00 100.00 POUT, OUTPUT POWER (W)S TEST CONDITIONS: VDD = 28 V, F = 1960 MHz, CW MEASUREMENT. Figure 5. Power Gain vs. Output Power 1000.00 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) Gps, POWER GAIN (dB)S 16 IDQ = 1500 mA 15 IDQ = 1250 mA IDQ = 900 mA 14 13 12 10 100 TEST CONDITIONS: VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING. 1000 POUT, OUTPUT POWER (W) PEPS Figure 6. Two-Tone Gain vs. Output Power 45 5 EFFICIENCY 0 35 -5 30 25 IRL 20 Gps 15 -25 -30 IMD3 5 1880 -15 -20 10 0 -10 1900 1920 1940 1960 1980 2000 2020 f, FREQUENCY (MHz)S TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING. Figure 7. Two-Tone Broadband Performance -35 2040 IRL, INPUT RETURN LOSS (dB), IMD3,S INTERMODULATION DISTORTIONS (dBc)S Gps, POWER GAIN (dB), DRAINS EFFICIENCY (%)S 40 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor IMD, INTERMODULATION DISTORTION (dBc)S Typical Performance Characteristics (continued) IMD3 -25 -35 IMD5 IMD7 -45 -55 100 1000 10000 100000 TONE SPACING (kHz)S TEST CONDITIONS: VDD = 28 V, F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP). 44 5 43 0 42 -5 EFFICIENCY 41 -10 40 -15 39 -20 38 37 36 -25 IMD3 24 25 -30 26 27 28 29 30 IMD3, INTERMODULATIONS DISTORTION (dBc)S DRAIN EFFICIENCY (%)S Figure 8. Two-Tone Intermodulation Products vs. Tone Spacing -35 VDD, DRAIN SUPPLY (V)S TEST CONDITIONS: F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING. Figure 9. Two-Tone Intermodulation Distortion and Efficiency vs. Drain Supply AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) IMD3, THIRD ORDER INTERMODULATIONS DISTORTION (dBc)S -10 -15 -20 -25 IDQ = 900 mA -30 -35 -40 IDQ = 1250 mA -45 IDQ = 1500 mA -50 -55 -60 10 100 1000 POUT, OUTPUT POWER (W) PEPS TEST CONDITIONS: VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING. Figure 10. Third Order Intermodulation Distortion vs. Output Power 0.0 50.0 45.0 EFFICIENCY 40.0 -20.0 3rd ORDER 35.0 -30.0 30.0 5th ORDER -40.0 25.0 -50.0 20.0 -60.0 7th ORDER 15.0 -70.0 -80.0 10.0 1.00 10.00 100.00 5.0 1000.00 Pout, OUTPUT POWER (WATTS) PEP TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz, 100 kHz TONE SPACING. Figure 11. Intermodulation Distortion Products vs. Output Power DRAIN EFFICIENCY (%)S IMD, INTERMODULATION DISTORTION (dBc)S -10.0 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 40.00 0.0 -10.0 EFFICIENCY 30.00 -20.0 IMD3 25.00 20.00 -30.0 Gps -40.0 15.00 -50.0 10.00 ACPR 5.00 0.00 1.00 IMD3 (dBc), ACPR (dBc)S Gps, POWER GAIN (dB) DRAINSEFFICIENCY (%) S 35.00 -60.0 -70.0 100.00 10.00 POUT, OUTPUT POWER (W)S TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, F1 = 1960 MHz, F2 = 1962.5 MHz. 9 IS-95 CHANNELS/CARRIER, P/A RATIO = 9.72 dB AT 0.01% PROBABILITY. Figure 12. Two Carrier IS-95 CDMA Performance vs. Output Power 5 EFFICIENCY 25 20 -5 -15 IRL Gps 15 10 IMD3 5 0 1880 -25 ACPR 1900 1920 1940 TEST CONDITIONS: VDD = 28 V, IDQ = 1250 mA, POUT = 24 W, 2 CARRIERS. 2.5 MHz SPACING, P/A RATIO = 9.72 dB AT 0.01%. 1960 1980 2000 2020 -35 -45 -55 2040 f, FREQUENCY (MHz)S Figure 13. Two Carrier CDMA (IS-95) Broadband Performance IRL, INPUT RETURN LOSS (dB), IMD3,S INTERMODULATION DISTORTION, AND ACPR (dBc)S Gps, POWER GAIN (dB), DRAINS EFFICIENCY (%)S 30 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain. AGR19125EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR19125EU 1 3 XXXX 3 2 2 AGR19125EF 1 PEAK DEVICES AGR19125EF 1 3 3 XXXX 2 XXXX - 4 Digit Trace Code PINS: 1. DRAIN 2. GATE 3. SOURCE 2