Fairchild FJX3906 General purpose transistor Datasheet

FJX3906
FJX3906
3
General Purpose Transistor
2
1
SOT-323
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
-40
Units
V
VCES
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-200
mA
PC
Collector Power Dissipation
350
mW
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
IC= -10µA, IE=0
Min.
-40
* Collector-Emitter Breakdown Voltage
IC= -1.0mA, IB=0
-40
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
ICEX
Collector Cut-off Current
VCE= -30V, VEB= -3V
hFE
* DC Current Gain
VCE= -1V, IC= -0.1mA
VCE= -1V, IC= -1mA
VCE= -1V, IC= -10mA
VCE= -1V, IC= -50mA
VCE= -1V, IC= -100mA
Symbol
Parameter
BVCBO
Collector-Base Breakdown Voltage
BVCEO
BVEBO
Test Condition
VCE (sat)
* Collector-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
VBE (sat)
* Base-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
fT
Current Gain Bandwidth Product
IC= -10mA, VCE= -20V
Cob
Output Capacitance
VCB= -5V, IE=0
f=1.0MHz
NF
Noise Figure
tON
tOFF
Max.
V
-5
V
-50
60
80
100
60
30
-0.65
Units
V
nA
300
-0.25
-0.4
V
V
-0.85
-0.95
V
V
250
MHz
4.5
pF
IC= -10µA, VCE= -5V
RS=1KΩ
f=10Hz to 15.7KHz
4
dB
Turn On Time
VCC= -3V, VBE= -0.5V
IC= -10mA, IB1= -1mA
70
ns
Turn Off Time
VCC= -3V, IC= -10mA
IB1=IB2=1mA
300
ns
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Marking
S2A
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJX3906
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = -1V
100
10
1
-1
-10
-100
-10
IC = 10 IB
VBE(sat)
-1
-0.1
VCE(sat)
-0.01
-0.1
-1000
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
-10
-100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
12
8
6
4
2
0
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Output Capacitance
©2002 Fairchild Semiconductor Corporation
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
1000
IE = 0
f = 1MHz
10
Cob [pF], CAPACITANCE
-1
IC[mA], COLLECTOR CURRENT
VCE = -20V
100
10
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A2, August 2002
FJX3906
Package Dimensions
SOT-323
2.00±0.20
3°
1.25±0.10
2.10±0.10
0.95±0.15
0.90
±0.10
+0.05
0.05 –0.02
1.00±0.10
1.30±0.10
0.275±0.100
3°
+0.04
0.135 –0.01
0.10 Min
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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