Fairchild FDD6644 30v n-channel powertrench mosfet Datasheet

FDD6644/FDU6644
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 67 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V
RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
Applications
• Low gate charge (25 nC typical)
• DC/DC converter
• High power and current handling capability
D
D
G
S
D-PAK
TO-252
(TO-252)
I-PAK
(TO-251AA)
G D S
Absolute Maximum Ratings
Symbol
G
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±16
V
ID
Drain Current
67
A
– Continuous
(Note 1a)
– Pulsed
PD
100
Maximum Power Dissipation
(Note 1)
68
(Note 1a)
3.8
1.6
(Note 1b)
TJ, TSTG
W
-55 to +175
°C
(Note 1)
2.2
°C/W
(Note 1b)
96
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
Quantity
FDD6644
FDD6644
D-PAK (TO-252)
13’’
12mm
2500 units
FDU6644
FDU6644
I-PAK (TO-251)
Tube
N/A
75
2001 Fairchild Semiconductor Corporation
FDD/FDU6644 Rev C(W)
FDD6644/FDU6644
April 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
Drain-Source Avalanche Energy
IAR
Drain-Source Avalanche Current
Single Pulse, VDD = 15 V, ID=17A
240
mJ
17
A
Off Characteristics
VGS = 0 V, ID = 250 µA
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
30
ID = 250 µA, Referenced to 25°C
V
27
mV/°C
1
µA
VGS = 16 V, VDS = 0 V
100
nA
VGS = –16 V, VDS = 0 V
–100
nA
3
V
(Note 2)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
–5
6.5
7.5
10
ID(on)
On–State Drain Current
VGS = 10 V, ID = 16 A
VGS = 4.5 V, ID = 15 A
VGS = 10 V, ID = 16.5A,TJ=125°C
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 16 A
1
1.5
mV/°C
8.5
10.5
13
50
mΩ
A
74
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
3087
pF
489
pF
185
pF
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
10
20
ns
12
22
ns
ns
td(off)
Turn–Off Delay Time
48
77
tf
Turn–Off Fall Time
10
20
ns
Qg
Total Gate Charge
25
35
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V, ID = 16 A,
VGS = 5 V
7.5
6.5
FDD/FDU6644 Rev C(W)
FDD6644/FDU6644
Electrical Characteristics
TA = 25°C unless otherwise noted
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.7 A
Voltage
0.7
(Note 2)
3.2
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD/FDU6644 Rev C(W)
FDD6644/FDU6644
Electrical Characteristics (continued)
FDD6644/FDU6644
Typical Characteristics
2
50
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
VGS = 10V
6.0V
3.0V
40
4.5V
30
20
2.5V
10
1.75
VGS = 3.0V
1.5
3.5V
4.0V
1.25
4.5V
6.0V
10V
1
0.75
0
0
0.5
1
0
1.5
10
20
Figure 1. On-Region Characteristics.
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.024
ID = 16A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
ID = 8 A
0.02
0.016
TA = 125oC
0.012
0.008
TA = 25oC
0.6
-50
-25
0
25
50
75
100
125
150
0.004
175
2
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
70
60
IS, REVERSE DRAIN CURRENT (A)
25oC
TA = -55oC
VDS = 5V
ID, DRAIN CURRENT (A)
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
o
125 C
50
40
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD/FDU6644 Rev C(W)
FDD6644/FDU6644
Typical Characteristics
4000
ID = 16A
VDS = 5V
f = 1MHz
VGS = 0 V
3500
10V
CISS
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
15V
6
4
3000
2500
2000
1500
1000
2
COSS
500
CRSS
0
0
0
10
20
30
40
0
50
5
Figure 7. Gate Charge Characteristics.
20
25
30
80
P(pk), PEAK TRANSIENT POWER (W)
100µs
1ms
10ms
100ms
RDS(ON) LIMIT
10
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
0.1
o
RθJA = 96 C/W
o
TA = 25 C
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
70
60
50
40
30
20
10
0
0.01
0.01
0.1
1
10
100
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
15
Figure 8. Capacitance Characteristics.
100
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R θJA (t) = r(t) + R θJA
R θJA = 96 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
T J - T A = P * R θJA (t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
FDD/FDU6644 Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET 
VCX™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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