DCR1374SBA DCR1374SBA Phase Control Thyristor Replaces February 2001 version, DS4597-5.1 DS4597-5.2 July 2001 FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Turn-on Losses KEY PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt 1800V 2694A 50000A 1000V/µs 1000A/µs APPLICATIONS ■ High Voltage Power Converters ■ DC Motor Control ■ High Voltage Power Supplies VOLTAGE RATINGS Part and Ordering Number DCR1374SBA18 DCR1374SBA16 DCR1374SBA14 DCR1374SBA12 DCR1374SBA10 DCR1374SBA08 Repetitive Peak Voltages VDRM and VDRM V 1800 1600 1400 1200 1000 800 Conditions Tvj = 0˚ to 125˚C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: MU140 (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1374SBA16 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/9 www.dynexsemi.com DCR1374SBA CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Parameter Symbol Test Conditions Max. Units 2694 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 4230 A Continuous (direct) on-state current - 3682 A 1965 A IT Single Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 3086 A Continuous (direct) on-state current - 2534 A Max. Units 2084 A IT Tcase = 80˚C unless stated otherwise. Parameter Symbol Test Conditions Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 3275 A Continuous (direct) on-state current - 2770 A 1500 A IT Single Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 2350 A Continuous (direct) on-state current - 1875 A IT 2/9 www.dynexsemi.com DCR1374SBA SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Test Conditions Max. Units 40 kA 8 x 106 A2s 50 kA 12.5 x 106 A2s 10ms half sine, Tcase = 125˚C VR = 50% VRRM - 1/4 sine Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125˚C I2t for fusing VR = 0 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Test Conditions Min. Max. Units Double side cooled DC - 0.013 ˚CW Single side cooled Anode DC - 0.021 ˚CW Cathode DC - 0.034 ˚CW Double side - 0.003 ˚CW (with mounting compound) Single side - 0.006 ˚CW On-state (conducting) - 135 ˚C Reverse (blocking) - 125 ˚C Clamping force 40.0kN Tstg Storage temperature range –55 125 ˚C Fm Clamping force 36.0 44.0 kN 3/9 www.dynexsemi.com DCR1374SBA SURGE RATINGS Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125˚C - 150 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 4600A - 500 A/µs - 1000 A/µs IRRM/IRRM Repetitive 50Hz Gate source 20V, 20Ω, Non-repetitive tr ≤ 0.5µs, Tj = 125˚C Threshold voltage At Tvj = 125˚C - 0.92 V rT On-state slope resistance At Tvj = 125˚C - 0.119 mΩ tgd Delay time VD = 67% VDRM, gate source 30V, 15Ω - 1.5 ns VT(TO) tr = 0.5µs, Tj = 25˚C tq Turn-off time IT = 800A, tp = 1ms, Tj =125˚C, µs 3001 VR = 50V, dIRR/dt = 20A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear IL Latching current Tj = 25˚C, VD = 10V - 350 mA IH Holding current Tj = 25˚C, VG–K = ∞ - 175 mA Note 1: Typical value 4/9 www.dynexsemi.com DCR1374SBA GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 350 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 30 A PGM Peak gate power See table fig. 5 150 W PG(AV) Mean gate power 10 W - - CURVES 5000 8000 Measured under pulse conditions Tj = 125˚C 4000 6000 Mean power dissipation - (W) Instantaneous on-state current, IT - (A) 7000 5000 4000 3000 2000 3000 2000 1000 d.c. Half wave 3 phase 6 phase 1000 0 0.5 0 1.0 1.5 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.√IT 2.0 0 1000 2000 3000 Mean on-state current IT(AV) - (A) 4000 Fig.3 Power dissipation Where A = 0.4846543 B = 8.508026 x 10–5 C = 0.05408984 D = 1.863019 x 10–3 these values are valid for Tj = 125˚C for IT 500A to 8000A 5/9 www.dynexsemi.com DCR1374SBA Tj = 25˚C Gate trigger voltage, VGT - (V) Tj = 125˚C er Low VGD dI/dt 5% limi 50 it 9 W U lim W QS 1 r ppe 20 IT 5W 1000 10 Pulse width Pulse frequency Hz µs 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1ms 150 100 25 10 10ms 20 - 10 Total stored charge QS - (µC) Table gives pulse power PGM in Watts 0W W Conditions: Tj = 125˚C IT = 800A VR = 100V tp = 1ms - Trapezoidal Tj = –40˚C 100 10000 t 5% Region of certain triggering IRR 100 0.1 1.0 10 0.1 0.001 100 Rate of decay of on-state current dI/dt - (A/µs) Fig.4 Stored charge 0.01 0.1 1 Gate trigger current IGT - (A) 10 Fig.5 Gate characteristics 100 0.1 Anode side cooled 50 8 7 6 25 5 I2t 4 0 1 10 ms 1 2 3 45 10 3 20 30 50 Cycles at 50Hz Thermal impedance - (˚C/W) 75 I2t value - (A2s x 106) Peak half sine wave on-state current - (kA) I2t = Î2 x t 2 Double side cooled 0.01 0.001 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.0001 0.001 0.01 Effective thermal resistance Junction to case ˚C/W Double side 0.0130 0.0141 0.0170 0.0200 0.1 1 Time - (s) Anode side 0.0210 0.0221 0.0250 0.0280 10 100 Duration Fig.6 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase 125˚C) Fig.7 Maximum (limit) transient thermal impedance junction to case (˚C/W) 6/9 www.dynexsemi.com DCR1374SBA PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.1 approx (In both electrodes) Cathode tab Cathode Ø102 max Ø63 ± 1 33.5 ± 0.6 Ø1.5 Gate Ø63 ± 1 Anode Ø92 max Nominal weight: 1100g Clamping force: 40kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: MU140 7/9 www.dynexsemi.com DCR1374SBA POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4597-4 Issue No. 5.2 July 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/9 www.dynexsemi.com