6 3 DS5549-5 June 2009 (LN26749) 14 ±0.2 ±0.2 Replaces DS5549-4.1 June 2002 Dual Switch IGBT Module 11.5 DIM400DDM17-A000 FEATURES ±0.2 ±0.2 10µs Short Circuit Withstand 18 6 x O7 KEY PARAMETERS 28 ±0.5 High44 Thermal ±0.2 Cycling Capability Non Punch Silicon ±0.2 57 Through VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the auxiliary terminals Lead Free construction 55.2 ± 0.3 ±0.2 11.85 APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM400DDM17-A000 is a dual switch 1700V, nchannel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. 1(E) 1700V 2.7 V screwing depth 400A max 8 800A 2(C) 5(E) 12(C) 6(G) 11(G) 7(C) 10(E) 3(C) 4(E) Fig. 1 Circuit configuration The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM400DDM17-A000 Note: When ordering, please use the complete part number Outline type code: D (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1 /8 DIM400DDM17-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V Max. Units 1700 V ±20 V Continuous collector current Tcase = 75°C 400 A IC(PK) Peak collector current 1ms, Tcase = 110°C 800 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 150°C 3470 W 30 kA s 4000 V 10 pC Max Units 36 °C/kW 80 °C/kW 8 °C/kW Transistor 150 °C Diode 125 °C 125 °C Mounting – M6 5 Nm Electrical connections – M4 2 Nm Electrical connections – M8 10 Nm 2 It 2 Diode I t value VR = 0, tp = 10ms, Tj = 125ºC Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz QPD Partial discharge – per module IEC1287, V1 = 1800V, V2 = 1300V, 50Hz RMS 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 20mm Clearance: 10mm CTI (Comparative Tracking Index): 350 Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Tstg Parameter Thermal resistance – transistor (per switch) Thermal resistance – diode (per switch) Thermal resistance – case to heatsink (per module) Min Continuous dissipation junction to case Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Typ. Junction temperature Storage temperature range Screw torque 2/8 Test Conditions - -40 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400DDM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Max Units VGE = 0V, VCE = VCES 1 mA VGE = 0V, VCE = VCES, Tcase = 125°C 12 mA Gate leakage current VGE = ± 20V, VCE = 0V 2 μA Gate threshold voltage IC = 20mA, VGE = VCE 5.5 6.5 V Collector-emitter saturation voltage VGE = 15V, IC = 400A 2.7 3.2 V VGE = 15V, IC = 400A, Tj = 125°C 3.4 4.0 V IF Diode forward current DC 400 A IFM Diode maximum forward current tp = 1ms 800 A VF Diode forward voltage ICES Test Conditions Min Typ Collector cut-off current IGES VGE(TH) VCE(sat) Parameter † 4.5 IF = 400A 2.2 2.5 V IF = 400A, Tj = 125°C 2.3 2.6 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 30 nF Qg Gate charge ±15V 4.5 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz - nF LM Module inductance – per switch - 20 nH Internal transistor resistance – per switch - 270 μ I1 1850 A I2 1600 A RINT Tj = 125°C, VCC = 1000V SCData Short circuit current, ISC tp ≤ 10μs, VGE ≤ 15V * VCE (max) = VCES – L x dI/dt IEC 60747-9 Note: † Measured at the power busbars, not the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /8 DIM400DDM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol td(off) tf Parameter Test Conditions Min Turn-off delay time IC = 400A Fall time Typ. Max Units 1150 ns 100 ns VGE = ±15V EOFF Turn-off energy loss VCE = 900V 120 mJ td(on) Turn-on delay time RG(ON) = 4.7 250 ns 250 ns 150 mJ 100 μC tr RG(OFF) = 4.7 Rise time LS ~ 100nH EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current VCE = 900V 230 A Erec Diode reverse recovery energy dIF/dt = 3000A/μs 70 mJ IF = 400A Tcase = 125°C unless stated otherwise Parameter Symbol td(off) tf Test Conditions Turn-off delay time IC = 400A Fall time Min Typ. Max Units 1400 ns 130 ns VGE = ±15V EOFF Turn-off energy loss VCE = 900V 180 mJ td(on) Turn-on delay time RG(ON) = 4.7 400 ns 250 ns 170 mJ 170 μC tr RG(OFF) = 4.7 Rise time LS ~ 100nH EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current VCE = 900V 270 A Erec Diode reverse recovery energy dIF/dt = 2500A/μs 100 mJ 4/8 IF = 400A Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400DDM17-A000 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /8 DIM400DDM17-A000 6/8 Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400DDM17-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 130±0.5 114 ±0.1 4 x M8 29.2 ±0.5 57 ±0.25 screwing depth max 16 11.5 ±0.2 6 x M4 6 x Ø7 16 ±0.2 18 ±0.2 40 ±0.2 53 ±0.2 screwing depth max 8 44 ±0.2 57 ±0.2 55.2 ±0.3 11.85 ±0.2 38 1(E) 5 ±0.2 +1.5 -0.0 14 ±0.2 35 ±0.2 140 ±0.5 124 ±0.25 30 ±0.2 5.25±0.3 57 ±0.25 2(C) 5(E) 12(C) 6(G) 11(G) 10(E) 7(C) 3(C) Nominal Weight: 4(E) 900g Module Outline Type Code: D Fig. 11 Module outline drawing Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /8 DIM400DDM17-A000 HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF, United Kingdom DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF, United Kingdom Fax: Tel: Fax: Tel: +44(0)1522 500020 +44(0)1522 502901 / 502753 email: [email protected] +44(0)1522 500550 +44(0)1522 500500 Dynex Semiconductor TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the company in writing) may not be used, appli ed or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee expressed or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the users responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com