SavantIC Semiconductor Product Specification BD132 Silicon PNP Power Transistors DESCRIPTION ·Complement to type BD131 ·With TO-126 package ·High current (Max:- 3A) ·Low voltage (Max: -45V) APPLICATIONS ·For general purpose power applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -45 V VCEO Collector-emitter voltage Open base -45 V VEBO Emitter -base voltage Open collector -4 V IC Collector current (DC) -3 A ICM Collector current-Peak -6 A IBM Base current-Peak -0.5 A Pt Total power dissipation 15 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Tmb560 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal resistance from junction to ambient Rth j-mb Thermal resistance from junction to mounting base VALUE UNIT 100 K/W 6 K/W SavantIC Semiconductor Product Specification BD132 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat-1 Collector-emitter saturation voltage VCEsat-2 MAX UNIT IC=-0.5A; IB=-50mA -0.3 V Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.7 V VBEsat-1 Base-emitter saturation voltage IC=-0.5A; IB=-50mA -1.2 V VBEsat-2 Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V VCB=-50V; IE=0 -50 nA VCB=-50V; IE=0 Tj=150 -10 µA -50 nA ICBO CONDITIONS MIN Collector cut-off current IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.5A ; VCE=-12V 40 hFE-2 DC current gain IC=-2A ; VCE=-1V 20 Transition frequency IC=-0.25A; VCE=-5V ;f=100MHz 60 fT TYP. 2 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD132