ADVANCE TECHNICAL INFORMATION High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE(sat) tfi IXBH 28N170A IXBT 28N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C 14 A ICM TC = 25°C, 1 ms 60 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 60 V CES = 1350 A V PC TC = 25°C 300 W TO-268 (IXBT) G E G -55 ... +150 °C 150 °C Tstg -55 ... +150 °C Features °C z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 (TO-247) 300 °C 260 1.13/10Nm/lb.in. G = Gate, E = Emitter, z z z 6 4 g g z z Symbol BVCES VGE(th) Test Conditions IC = 250 µA, VGE = 0 V Temperature Coefficent IC = 250 µA, VCE = VGE Temperature Coefficent ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC 1700 0.10 3.0 - 0.24 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V TJ = 125°C © 2005 IXYS All rights reserved 4.7 5.0 V %/K 6.0 V %/K 10 100 µA µA ±100 nA 6.0 V V (TAB) TO-247 AD (IXBH) TJM TJ = 1700 V = 30 A = 6.0 V = 50 ns C (TAB) C E C = Collector, TAB = Collector High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications z z z z AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge circuits Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS99333(02/05) IXBH 28N170A IXBT 28N170A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 12 17 S ∅P 2800 pF 132 pF Cres 42 pF Qg 105 nC 20 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 35 nC td(on) 35 ns 36 ns 265 ns 50 ns Eoff 1.2 mJ td(on) 35 ns tri Inductive load, TJ = 25°°C td(off) IC = IC90, VGE = 15 V VCE = 850 V, RG = Roff = 10 Ω tfi tri Eon Inductive load, TJ = 125°°C td(off) IC tfi = IC90, VGE = 15 V VCE = 850 V, RG = Roff = 10 Ω Eoff 36 ns 0.7 mJ 290 ns 150 ns 2.3 mJ RthJC RthCK TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.42 K/W (TO-247) Reverse Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF t = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% IRM t rr IF vR = IC90, VGE = 0 V, -diF/dt = 50 A/us = 100 V 3.0 25 360 V A ns Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343