CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL D SO URCE DRAIN G ATE TO-3P Top View G S 1 2 N-Channel MOSFET 3 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Symbol Value Unit ID 14 A IDM 56 VGS ±20 V VGSM ±40 V PD 190 W 1.5 W/℃ Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ TJ, TSTG -55 to 150 ℃ EAS 588 mJ θJC 0.65 ℃/W θJA 40 TL 260 (VDD = 100V, VGS = 10V, IL = 14A, L = 6mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2002/12/18 Preliminary Champion Microelectronic Corporation ℃ Page 1 CMT14N50 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number Package CMT14N50N3P TO-3P ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT14N50 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Symbol Min V(BR)DSS 500 Typ Max Units V µA Drain-Source Leakage Current (VDS = 500 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125℃) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 8.4A) * RDS(on) 0.4 Ω Drain-Source On-Voltage (VGS = 10 V) (ID = 14 A) VDS(on) 7.5 V 25 250 2.0 Forward Transconductance (VDS = 50 V, ID = 8.4A) * gFS Input Capacitance Ciss 2038 Coss 307 pF pF Crss 10 pF td(on) 15 (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD = 250 V, ID = 14 A, RD = 17Ω, RG = 6.2Ω) * (VDS = 400 V, ID = 14 A, VGS = 10 V)* 9.3 mhos tr 36 ns ns td(off) 35 ns tf 29 ns Qg 64 Qgs 16 Qgd 26 nC nC nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 5.0 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 13 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 14 A, VGS = 0 V, dIS/dt = 100A/µs) VSD 1.5 ton ** trr 487 V ns 731 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2002/12/18 Preliminary Champion Microelectronic Corporation Page 2 CMT14N50 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2002/12/18 Preliminary Champion Microelectronic Corporation Page 3 CMT14N50 POWER FIELD EFFECT TRANSISTOR 2002/12/18 Preliminary Champion Microelectronic Corporation Page 4 CMT14N50 POWER FIELD EFFECT TRANSISTOR 2002/12/18 Preliminary Champion Microelectronic Corporation Page 5 CMT14N50 POWER FIELD EFFECT TRANSISTOR 2002/12/18 Preliminary Champion Microelectronic Corporation Page 6 CMT14N50 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION θ2 TO-3P A A1 A2 A3 b θ3 b1 C θ1 C1 D D1 D2 D3 D4 e f1 f2 L1 L2 L3 θ1 θ3 θ3 θ2 θ3 θ3 θ3 2002/12/18 Preliminary Champion Microelectronic Corporation Page 7 CMT14N50 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2002/12/18 Preliminary T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 8