Ordering number : ENN7199 MCH3319 P-Channel Silicon MOSFET MCH3319 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3319] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65 0.07 1.6 2.1 3 2.0 3 (Bottom view) 0.85 1 : Gate 2 : Source 3 : Drain Specifications 1 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2 SANYO : MCPH3 (Top view) Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS ±8 V --2.6 A Drain Current (DC) Drain Current (Pulse) ID IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) --10.4 A 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Conditions ID=--1mA, VGS=0 VDS=--12V, VGS=0 Ratings min typ max --12 Unit V --10 µA ±10 µA --1.0 V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current VGS=±6.4V, VDS=0 VDS=--6V, ID=--1mA --0.3 Forward Transfer Admittance IGSS VGS(off) yfs VDS=--6V, ID=--1.3A 2.9 ID=--1.3A, VGS=--4.5V ID=--0.7A, VGS=--2.5V 75 98 mΩ Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 110 155 mΩ RDS(on)3 ID=--0.3A, VGS=--1.8V 150 255 mΩ Cutoff Voltage Marking : JU 4.2 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41002 TS IM TA-3486 No.7199-1/4 MCH3319 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz Turn-ON Delay Time td(on) Rise Time tr td(off) Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings Conditions min typ Unit max 450 pF 100 pF 85 pF See specified Test Circuit. 15 ns See specified Test Circuit. 70 ns See specified Test Circuit. 65 ns See specified Test Circuit. 50 ns VDS=--6V, VGS=--4.5V, ID=--2.6A VDS=--6V, VGS=--4.5V, ID=--2.6A 6.5 nC 0.8 nC VDS=--6V, VGS=--4.5V, ID=--2.6A IS=--2.6A, VGS=0 2.0 nC --0.87 --1.5 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --1.3A RL=4.6Ω VIN D VOUT PW=10µs D.C.≤1% G MCH3319 50Ω S ID -- VDS --3.0 V 8 --1. V --1.5 --1.5 --1.0 --0.5 --0.1 --0.2 --0.3 --0.4 Drain-to-Source Voltage, VDS -- V --1.0 25 0 --0.2 --0.5 150 ID= --0.7A --1.3A 100 50 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V --7 --8 IT04327 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 IT04326 RDS(on) -- Ta 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 --0.6 Gate-to-Source Voltage, VGS -- V Ta=25°C 0 --0.4 IT04325 RDS(on) -- VGS 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.5 --0.5 VGS= --1.0V 0 0 --2.0 °C --25 °C --2.0 Drain Current, ID -- A 5V --2.5 --4 . Drain Current, ID -- A V .5 --2 --3 . --2.5 ID -- VGS VDS= --6V °C 5V --3 . 0V --3.0 Ta= 75 P.G 250 200 .8V I D= 150 , --0.3A = --1 VGS V = --2.5 A, V GS .7 I D= --0 --4.5V A, V GS= I D= --1.3 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT04328 No.7199-2/4 MCH3319 yfs -- ID 5 °C --25 Ta= 3 C 75° 2 1.0 7 5 3 2 7 2 3 5 7 2 --1.0 3 5 --0.1 --0.4 7 --0.8 f=1MHz Ciss 5 Ciss, Coss, Crss -- pF tr 100 td(off) 7 tf 5 3 3 2 Coss 100 Crss 7 2 td(on) 5 3 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 0 --10 7 5 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 3 2 --0.5 3 2 2 3 4 5 6 Total Gate Charge, Qg -- nC 7 IT04333 PD -- Ta 1.2 1.0 --10 --12 IT04332 <10µs 1m s 10 ID= --2.6A DC 100 op ms er ati on 3 2 --1.0 1 --8 IDP= --10.4A --1.0 7 5 --0.1 7 5 0 --6 ASO 2 --3.5 0 --4 Drain-to-Source Voltage, VDS -- V VDS= --6V ID= --2.6A --4.0 --2 IT04331 VGS -- Qg --4.5 --1.2 IT04330 7 2 10 --0.1 --1.0 Ciss, Coss, Crss -- VDS 1000 VDD= --6V VGS= --4.5V 3 --0.6 Diode Forward Voltage, VSD -- V IT04329 SW Time -- ID 5 Switching Time, SW Time -- ns --1.0 --25°C 5 2 25°C 25°C 7 3 Ta= 75°C 10 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V VGS=0 7 2 5 --0.1 Allowable Power Dissipation, PD -- W IF -- VSD --10 VDS= --6V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 ms Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 IT04334 Drain-to-Source Voltage, VDS -- V M ou nt 0.8 ed on ac er am ic 0.6 bo ar 0.4 d( 90 0m m2 ✕ 0.8 m 0.2 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04335 No.7199-3/4 MCH3319 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2002. Specifications and information herein are subject to change without notice. PS No.7199-4/4