CY62138F MoBL® 2-Mbit (256 K × 8) Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description ■ High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW). ■ Wide voltage range: 4.5 V to 5.5 V ■ Pin compatible with CY62138V ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 5 A ■ Ultra low active power ❐ Typical active current: 1.6 mA @ f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 32-pin SOIC and 32-pin thin small outline package (TSOP) II packages To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A17). To read from the device, take Chip Enable (CE1 LOW and CE2 HIGH) and output enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW and CE2 HIGH and WE LOW). The CY62138F device is suitable for interfacing with processors that have TTL I/P levels. It is not suitable for processors that require CMOS I/P levels. Please see Electrical Characteristics on page 4 for more details and suggested alternatives. Logic Block Diagram Cypress Semiconductor Corporation Document Number: 001-13194 Rev. *G • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised June 4, 2013 CY62138F MoBL® Contents Pin Configurations ........................................................... 3 Product Portfolio .............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ...................................................................... 5 Thermal Resistance .......................................................... 5 AC Test Loads and Waveforms ....................................... 5 Data Retention Characteristics ....................................... 6 Data Retention Waveform ................................................ 6 Switching Characteristics ................................................ 7 Switching Waveforms ...................................................... 8 Truth Table ...................................................................... 10 Document Number: 001-13194 Rev. *G Ordering Information ...................................................... 11 Ordering Code Definitions ......................................... 11 Package Diagrams .......................................................... 12 Acronyms ........................................................................ 14 Documents Conventions ............................................... 14 Units of Measure ....................................................... 14 Document History Page ................................................. 15 Sales, Solutions, and Legal Information ...................... 16 Worldwide Sales and Design Support ....................... 16 Products .................................................................... 16 PSoC Solutions ......................................................... 16 Page 2 of 16 CY62138F MoBL® Pin Configurations Figure 1. 32-pin SOIC/TSOP II Pinout (Top View) A17 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 32 31 2 3 4 30 29 5 6 28 27 26 25 7 8 9 10 24 23 22 11 12 13 14 15 16 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 Product Portfolio Power Dissipation VCC Range (V) Product CY62138FLL Speed (ns) Min Typ [1] Max 4.5 V 5.0 V 5.5 V 45 Operating ICC (mA) f = 1 MHz f = fmax Standby ISB2 (A) Typ [1] Max Typ [1] Max Typ [1] Max 1.6 2.5 13 18 1 5 Note 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. Document Number: 001-13194 Rev. *G Page 3 of 16 CY62138F MoBL® DC Input Voltage [2, 3] ......... –0.5 V to 6.0 V (VCCmax + 0.5 V) Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ............................... –65 °C to + 150 °C Ambient temperature with power applied ......................................... –55 °C to + 125 °C Supply voltage to ground potential ............................. –0.5 V to 6.0 V (VCCmax + 0.5 V) DC voltage applied to outputs in High Z state [2, 3] ............. –0.5 V to 6.0 V (VCCmax + 0.5 V) Output Current into Outputs (LOW) ............................ 20 mA Static Discharge Voltage (MIL–STD–883, Method 3015) .............................. > 2001 V Latch-up Current .................................................... > 200 mA Operating Range Device CY62138FLL Range Industrial Ambient Temperature VCC [4] –40 °C to +85 °C 4.5 V to 5.5 V Electrical Characteristics Over the Operating Range Parameter VOH Description Output HIGH voltage Test Conditions VCC = 4.5 V VCC = 5.5 V VOL Output LOW voltage IOL = 2.1 mA IOH = –1.0 mA IOH = –0.1 mA 45 ns Min Typ [5] Max 2.4 – – 3.4 Unit V [6] – – – – 0.4 V VIH Input HIGH voltage VCC = 4.5 V to 5.5 V 2.2 – VCC + 0.5 V VIL Input LOW voltage VCC = 4.5 V to 5.5 V –0.5 – 0.8 V IIX Input leakage current GND < VI < VCC –1 – +1 A IOZ Output leakage current GND < VO < VCC, Output disabled –1 – +1 A ICC VCC operating supply Current f = fmax = 1/tRC – 13 18 mA – 1.6 2.5 – 1 5 ISB2 [7] f = 1 MHz VCC = VCC(max), IOUT = 0 mA, CMOS levels Automatic CE Power-down CE1 > VCC – 0.2 V or CE2 < 0.2 V, current CMOS inputs VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0, VCC = VCC(max) A Notes 2. VIL(min) = –2.0 V for pulse durations less than 20 ns. 3. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns. 4. Full device AC operation assumes a 100 s ramp time from 0 to VCC(min) and 200 s wait time after VCC stabilization. 5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 6. Please note that the maximum VOH limit does not exceed minimum CMOS VIH of 3.5 V. If you are interfacing this SRAM with 5 V legacy processors that require a minimum VIH of 3.5 V, please refer to Application Note AN6081 for technical details and options you may consider. 7. Chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating. Document Number: 001-13194 Rev. *G Page 4 of 16 CY62138F MoBL® Capacitance Parameter [8] CIN Description Test Conditions Input capacitance COUT TA = 25 °C, f = 1 MHz, VCC = VCC(typ) Output capacitance Max Unit 10 pF 10 pF Thermal Resistance Parameter [8] Description JA Thermal resistance (Junction to Ambient) JC Thermal resistance (Junction to Case) Test Conditions 32-pin SOIC Still air, soldered on a 3 × 4.5 inch two-layer printed circuit board 32-pin TSOP II Unit 44.53 44.16 C/W 24.05 11.97 C/W AC Test Loads and Waveforms Figure 2. AC Test Loads and Waveforms R1 VCC OUTPUT ALL INPUT PULSES 3.0 V 30 pF INCLUDING JIG AND SCOPE 90% 10% R2 GND Rise Time = 1 V/ns Equivalent to: 90% 10% Fall Time = 1 V/ns THEVENIN EQUIVALENT OUTPUT RTH Parameters 5.0 V Unit R1 1800 R2 990 RTH 639 VTH 1.77 V V Note 8. Tested initially and after any design or process changes that may affect these parameters. Document Number: 001-13194 Rev. *G Page 5 of 16 CY62138F MoBL® Data Retention Characteristics Over the Operating Range Parameter VDR ICCDR Description Conditions VCC for Data retention [10] Data retention current VCC = VDR, CE1 > VCC 0.2 V or CE2 < 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V Min Typ [9] Max Unit 2.0 – – V – 1 5 A tCDR [9] Chip deselect to data retention time 0 – – ns tR [11] Operation recovery time 45 – – ns Data Retention Waveform Figure 3. Data Retention Waveform [12] DATA RETENTION MODE VCC VCC(min) tCDR VDR > 2.0 V VCC(min) tR CE Notes 9. Tested initially and after any design or process changes that may affect these parameters. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 10. Chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating. 11. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at VCC(min) > 100 s. 12. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH. Document Number: 001-13194 Rev. *G Page 6 of 16 CY62138F MoBL® Switching Characteristics Over the Operating Range Parameter [13] Description 45 ns Min Max Unit Read Cycle tRC Read cycle time 45 – ns tAA Address to data valid – 45 ns tOHA Data hold from address change 10 – ns tACE CE1 LOW and CE2 HIGH to data valid – 45 ns tDOE OE LOW to data valid – 22 ns 5 – ns – 18 ns 10 – ns OE LOW to low Z tLZOE [14] OE HIGH to high Z tHZOE [14, 15] [14] tLZCE CE1 LOW and CE2 HIGH to low Z tHZCE CE1 HIGH or CE2 LOW to high Z [14, 15] – 18 ns tPU CE1 LOW and CE2 HIGH to power-up 0 – ns CE1 HIGH or CE2 LOW to power-down – 45 ns tWC Write cycle time 45 – ns tSCE CE1 LOW and CE2 HIGH to write end 35 – ns tAW Address setup to write end 35 – ns tHA Address hold from write end 0 – ns tSA Address setup to write start 0 – ns tPWE WE pulse width 35 – ns tSD Data setup to write end 25 – ns tHD Data hold from write end 0 – ns tHZWE WE LOW to high Z [14, 15] – 18 ns 10 – ns tPD Write Cycle tLZWE [16] WE HIGH to low Z [14] Notes 13. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1 V/ns) or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the Figure 2 on page 5. 14. At any given temperature and voltage condition, tHZCE is less than tLZCE , tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 15. tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high impedance state. 16. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. Document Number: 001-13194 Rev. *G Page 7 of 16 CY62138F MoBL® Switching Waveforms Figure 4. Read Cycle 1 (Address Transition Controlled) [17, 18] tRC RC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Figure 5. Read Cycle No. 2 (OE Controlled) [18, 19, 20] ADDRESS tRC CE tACE OE tHZOE tDOE tHZCE tLZOE HIGH IMPEDANCE DATA OUT DATA VALID tLZCE tPD tPU VCC SUPPLY CURRENT HIGH IMPEDANCE 50% 50% ICC ISB Figure 6. Write Cycle No. 1 (WE Controlled) [20, 21, 22, 23] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE OE tSD DATA I/O NOTE 24 tHD DATA VALID tHZOE Notes 17. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 18. WE is HIGH for read cycle. 19. Address valid before or similar to CE1 transition LOW and CE2 transition HIGH. 20. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH. 21. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 22. Data I/O is high impedance if OE = VIH. 23. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state. 24. During this period, the I/Os are in output state. Do not apply input signals. Document Number: 001-13194 Rev. *G Page 8 of 16 CY62138F MoBL® Switching Waveforms (continued) Figure 7. Write Cycle No. 2 (CE1 or CE2 Controlled) [25, 26, 27, 28] tWC ADDRESS tSCE CE tSA tAW tHA tPWE WE tSD DATA I/O tHD DATA VALID Figure 8. Write Cycle No. 3 (WE Controlled, OE LOW) [25, 28] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE tSD DATA I/O NOTE 29 tHD DATA VALID tHZWE tLZWE Notes 25. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH. 26. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 27. Data I/O is high impedance if OE = VIH. 28. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state. 29. During this period, the I/Os are in output state. Do not apply input signals. Document Number: 001-13194 Rev. *G Page 9 of 16 CY62138F MoBL® Truth Table CE1 CE2 WE OE Inputs/Outputs Mode Power [30] X X High Z Deselect/Power-down Standby (ISB) X[30] L X X High Z Deselect/Power-down Standby (ISB) L H H L Data out Read Active (ICC) L H H H High Z Output disabled Active (ICC) L H L X Data in Write Active (ICC) H X Note 30. The ‘X’ (Don’t care) state for the Chip enables (CE1 and CE2) in the truth table refer to the logic state (either HIGH or LOW). Intermediate voltage levels on these pins is not permitted. Document Number: 001-13194 Rev. *G Page 10 of 16 CY62138F MoBL® Ordering Information Speed (ns) 45 Package Diagram Ordering Code CY62138FLL-45SXI Package Type 51-85081 32-pin SOIC (Pb-free) Operating Range Industrial Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY 621 3 8 F LL - 45 XX X I Temperature Grade: I = Industrial Pb-free Package Type: XX = S or ZS S = 32-pin SOIC ZS = 32-pin TSOP II Speed Grade: 45 ns LL = Low Power F = Process Technology 90 nm Bus width = × 8 Density = 2-Mbit Family Code: MoBL SRAM family Company ID: CY = Cypress Document Number: 001-13194 Rev. *G Page 11 of 16 CY62138F MoBL® Package Diagrams Figure 9. 32-pin SOIC (450 Mil) S32.45/SZ32.45 Package Outline, 51-85081 51-85081 *E Document Number: 001-13194 Rev. *G Page 12 of 16 CY62138F MoBL® Package Diagrams (continued) Figure 10. 32-pin TSOP II (20.95 × 11.76 × 1.0 mm) ZS32 Package Outline, 51-85095 51-85095 *B Document Number: 001-13194 Rev. *G Page 13 of 16 CY62138F MoBL® Acronyms Acronym Documents Conventions Description Units of Measure CMOS Complementary Metal Oxide Semiconductor I/O Input/Output °C degree Celsius OE Output Enable MHz megahertz SOIC Small Outline Integrated Circuit A microampere SRAM Static Random Access Memory s microsecond TSOP Thin Small Outline Package mA milliampere WE Write Enable ns nanosecond ohm % percent pF picofarad V volt W watt Document Number: 001-13194 Rev. *G Symbol Unit of Measure Page 14 of 16 CY62138F MoBL® Document History Page Document Title: CY62138F MoBL®, 2-Mbit (256 K × 8) Static RAM Document Number: 001-13194 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 797956 See ECN VKN New Data Sheet *A 940341 See ECN VKN Added footnote #7 related to ISB2 and ICCDR *B 3055174 13/10/2010 RAME Updated As per new template Added Acronyms and Units of Measure table. Added Ordering Code Definitions. Footnotes updated Updated Package Diagram Figure 9 and Figure 10. *C 3061313 15/10/2010 RAME Minor change: Corrected “IO” to “I/O” *D 3232735 04/18/2011 RAME Removed the Note “For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com ” in page 1. *E 3287636 06/20/2011 RAME Updated Package Diagrams. Updated in new template. *F 3846281 12/19/2012 TAVA Updated Ordering Information (Updated part numbers). Updated Package Diagrams: spec 51-85081 – Changed revision from *C to *E. *G 4013949 06/04/2013 MEMJ Updated Functional Description. Updated Electrical Characteristics: Added one more Test Condition “VCC = 5.5 V, IOH = –0.1 mA” for VOH parameter and added maximum value corresponding to that Test Condition. Added Note 6 and referred the same note in maximum value for VOH parameter corresponding to Test Condition “VCC = 5.5 V, IOH = –0.1 mA”. Document Number: 001-13194 Rev. *G Page 15 of 16 CY62138F MoBL® Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2007-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. 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Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-13194 Rev. *G Revised June 4, 2013 Page 16 of 16 MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All products and company names mentioned in this document may be the trademarks of their respective holders.