isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW72 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max.) @IC= 4A ·High Speed Switching APPLICATIONS ·Designed for use in clocked voltage converters. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW72 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 450V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE DC Current Gain IC= 4A; VCE= 5V 2.0 μs 4.0 μs 1.2 μs 400 UNIT V 15 Switching times ton Turn-on Time ts Storage Time tf Fall Time isc website：www.iscsemi.cn IC= 5A; IB1= -IB2= 0.5A; RL= 10Ω 2