Gunter Semiconductor GmbH GFC244 N Channel Power MOSFET with extremely low RDS(on) Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ ℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * Extremely low RDS(on) Mechanical Data: D21 4.11mmx 5.56mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 15 mil Al Absolute Maximum Rating Characteristics @Ta=25℃ ℃ Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 250 V VGS=0V, ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 0.28 Ω VGS=10V, ID=7Α Continuous Drain current ( in target package) ID@25℃ 14 A VGS=10V Continuous Drain current ( in target package) ID@100℃ 8.9 A VGS=10V Tj -55~150 ℃ TSTR -55~150 ℃ PD 139 W Operation Junction Storage Temperature Target Device: IRF644 TO-220AB @Tc=25℃