PIN diodes MA2SP01 Silicon epitaxial planar type Unit: mm For high frequency switch 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 0.01±0.01 5˚ (0.60) (0.60) 0.80±0.05 (0.80) • Low terminal capacitance: Ct ≤ 0.8 pF • Low forward dynamic resistance: rf ≤ 1.0 Ω • Miniature package and surface mounting type 1.60±0.05 1 ■ Features 2 0.30±0.05 0+0 –0.05 5˚ Symbol Rating Unit VR 60 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (0.15) Parameter Reverse voltage (DC) 0.01±0.01 ■ Absolute Maximum Ratings Ta = 25°C 1: Anode 2: Cathode SSMini2-F1 Package Marking Symbol: 2P ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 60 V 100 nA Forward voltage (DC) VF IF = 10 mA 1.0 V Terminal capacitance Ct VR = 1 V, f = 1 MHz 0.8 pF Forward dynamic resistance rf IF = 10 mA, f = 100 MHz 1.0 Ω Publication date: April 2002 SKL00010AED 1 MA2SP01 IF V F I R VR Ct VR 103 103 1 Ta = 150°C 2 10 Ta = 150°C 1 25°C Terminal capacitance Ct (pF) −20°C 100°C 10 Reverse current IR (nA) Forward current IF (mA) 102 100°C 10 1 10−1 −2 10 25°C 10−1 f = 1 MHz Ta = 25°C 0.9 10−3 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10−4 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 rf I F Forward dynamic resistance rf (Ω) 103 f = 100 MHz Ta = 25°C 102 10 1 10−1 0.01 0.1 1 10 Forward current IF (mA) 2 50 Reverse voltage VR (V) Forward voltage VF (V) SKL00010AED 60 0 0 10 20 30 40 50 Reverse voltage VR (V) 60 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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