ESD7382MUT5G ESD Protection Diodes Micro−Packaged Diodes for ESD Protection The ESD7382 is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. www.onsemi.com 1 Cathode 2 Anode Features Ultra−Low Capacitance: 0.37 pF Low Clamping Voltage Small Body Outline Dimensions: 0.60 mm x 0.30 mm Low Body Height: 0.3 mm Stand−off Voltage: 5.0 V Low Leakage Insertion Loss: 0.030 dBm Response Time is < 1 ns Low Dynamic Resistance < 1 W IEC61000−4−2 Level 4 ESD Protection These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM PIN 1 X3DFN2 CASE 152AF 2 M 2 • • • • • • • • • • • M = Specific Device Code (Rotated 270°) = Date Code X2DFN2 CASE 714AB (In Development) XX M G XX = Specific Device Code M = Date Code G = Pb−Free Package Typical Applications • RF Signal ESD Protection • RF Switching, PA, and Antenna ESD Protection • Near Field Communications ORDERING INFORMATION MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) Symbol Contact Air Value Unit ±20 ±20 kV Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance, Junction−to−Ambient °PD° 250 mW RqJA 400 °C/W Junction and Storage Temperature Range TJ, Tstg −40 to +125 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Device Package Shipping† ESD7382MUT5G X3DFN2 (Pb−Free) 10,000 / Tape & Reel ESD7382N2T5G (In Development) X2DFN2 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2017 January, 2017 − Rev. 2 1 Publication Order Number: ESD7382/D ESD7382MUT5G ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) IF Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR V IR VF IT Maximum Reverse Leakage Current @ VRWM VBR IT VC VBR VRWM Working Peak Reverse Voltage Breakdown Voltage @ IT Test Current *See Application Note AND8308/D for detailed explanations of datasheet parameters. IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage (Note 2) Symbol Conditions Min Typ Max Unit 5.0 V VRWM VBR IT = 1 mA 5.2 V Reverse Leakage Current IR VRWM = 5.0 V 1.0 mA Clamping Voltage (Note 3) VC IPP = 1 A 8.0 V Clamping Voltage (Note 3) VC IPP = 3 A 10 V ESD Clamping Voltage VC Per IEC61000−4−2 See Figures 1 and 2 Junction Capacitance CJ VR = 0 V, f = 1 Mhz VR = 0 V, f < 1 GHz 0.37 0.25 0.55 0.55 pF Dynamic Resistance RDYN TLP Pulse 0.32 W f = 1 Mhz f = 8.5 GHz 0.030 0.573 dB Insertion Loss 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 2 ESD7382MUT5G 1.E−02 2.0 1.E−03 1.8 1.E−04 1.6 1.4 1.E−05 I1 (A) C (pF) 1.E−06 1.E−07 1.E−08 1.2 1.0 0.8 0.6 1.E−09 0.4 1.E−10 0.2 1.E−11 −1 0 1 2 3 4 5 6 7 8 0 0 9 0.5 1 1.5 V1 (V) 2 2.5 3 3.5 4 VBias (V) Figure 3. IV Characteristics Figure 4. CV Characteristics 1 0.6 0 0.5 −1 CAPACITANCE (pF) −2 dB −3 −4 −5 −6 −7 −8 0.4 0.3 3.3 V 0V 0.2 0.1 −9 −10 1.E+06 1.E+07 1.E+08 1.E+09 0.0 0.E+00 1.E+10 5.E+08 1.E+09 FREQUENCY (Hz) 2.E+09 3.E+09 3.E+09 FREQUENCY Figure 5. RF Insertion Loss Figure 6. Capacitance over Frequency 35 −35 30 −30 25 −25 CURRENT (A) CURRENT (A) 2.E+09 20 15 −20 −15 10 −10 5 −5 0 0 0 2 4 6 8 10 12 14 16 0 18 −2 −4 −6 −8 −10 −12 VOLTAGE (V) VOLTAGE (V) Figure 7. Positive TLP I−V Curve Figure 8. Negative TLP I−V Curve www.onsemi.com 3 −14 ESD7382MUT5G IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 9. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 10. Diagram of ESD Test Setup ESD Voltage Clamping at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 11. 8 X 20 ms Pulse Waveform www.onsemi.com 4 80 ESD7382MUT5G PACKAGE DIMENSIONS X3DFN2, 0.62x0.32, 0.355P, (0201) CASE 152AF ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B D PIN 1 INDICATOR (OPTIONAL) DIM A A1 b D E e L2 E TOP VIEW 0.05 C MILLIMETERS MIN MAX 0.25 0.33 −−− 0.05 0.22 0.28 0.58 0.66 0.28 0.36 0.355 BSC 0.17 0.23 A 0.05 C 2X A1 SIDE VIEW C RECOMMENDED MOUNTING FOOTPRINT* SEATING PLANE 0.74 e 2X 1 1 b 2 2X 2X 0.05 M 2X 0.30 0.05 L2 M C A B 0.31 DIMENSIONS: MILLIMETERS C A B See Application Note AND8398/D for more mounting details BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 ESD7382MUT5G PACKAGE DIMENSIONS X2DFN2 1.0x0.6, 0.65P CASE 714AB ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. 0.10 C ÉÉ ÉÉ A B D PIN 1 INDICATOR E DIM A A1 b D E e L 0.05 C TOP VIEW NOTE 3 0.10 C A MILLIMETERS MIN MAX 0.34 0.40 −−− 0.05 0.45 0.55 1.00 BSC 0.60 BSC 0.65 BSC 0.20 0.30 0.10 C A1 C SIDE VIEW RECOMMENDED SOLDER FOOTPRINT* SEATING PLANE 1.20 e 2X b e/2 0.05 M C A B 2X 0.47 0.60 PIN 1 1 DIMENSIONS: MILLIMETERS 2X L 0.05 M BOTTOM VIEW C A B *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative ESD7382/D