BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC ITO-220AB 2 3 1 2 3 1 BYV32 Series BYVF32 Series PIN 1 PIN 2 PIN 3 CASE PIN 1 PIN 2 PIN 3 TO-263AB K TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. 2 1 BYVB32 Series PIN 1 K PIN 2 HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 18 A VRRM 50 V to 200 V IFSM 150 A trr 25 ns VF 0.85 V TJ max. 150 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TC = 125 °C IF(AV) 18 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A TJ, TSTG - 65 to + 150 °C VAC 1500 V Operating storage and temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Document Number: 88558 Revision: 05-May-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode (1) IF = 20 A IF = 5.0 A SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT TJ = 25 °C TJ = 100 °C VF 1.15 0.85 V TJ = 25 °C TJ = 100 °C IR 10 600 µA Maximum reverse recovery time per diode IF = 1 A, VR = 30 V, dI/dt = 100 A/µs, Irr = 10 % IRM trr 25 ns Typical junction capacitance per diode 4.0 V, 1 MHz CJ 45 pF Maximum DC reverse current per diode at rated DC blocking voltage Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case per diode SYMBOL BYV BYVF BYVB UNIT RθJC 1.6 5.0 1.6 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.85 45 50/tube Tube TO-220AB BYV32-200-E3/45 ITO-220AB BYVF32-200-E3/45 1.97 45 50/tube Tube TO-263AB BYVB32-200-E3/45 1.35 45 50/tube Tube TO-263AB BYVB32-200-E3/81 1.35 81 800/reel Tape and reel TO-220AB BYV32-200HE3/45 (1) 1.85 45 50/tube Tube ITO-220AB BYVF32-200HE3/45 (1) 1.97 45 50/tube Tube TO-263AB BYVB32-200HE3/45 (1) 1.35 45 50/tube Tube TO-263AB BYVB32-200HE3/81 (1) 1.35 81 800/reel Tape and reel Note: (1) Automotive grade AEC Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88558 Revision: 05-May-08 BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Resistive or Inductive Load 18 Instantaneous Reverse Leakage Current (µA) Average Forward Rectified Current (A) 20 16 12 8 4 10 1 TC = 25 °C 0 0.1 0 25 50 75 100 125 150 0 20 40 60 80 100 Case Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics Per Diode 60 150 TJ = 150 °C 10 ms Single Half Sine-Wave 125 Junction Capacitance (pF) Peak Forward Surge Current (A) TC = 100 °C 100 100 75 50 25 0 TJ = 25 °C f = 1.0 MHz Vsig = 5 mVp-p 50 40 30 20 10 0 1 100 10 1 10 100 Number of Cycles at 50 Hz Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 5. Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.1 Pulse Width = 300 µs 1 % Duty Cycle 0.3 0.5 0.7 0.9 1.1 1.3 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88558 Revision: 05-May-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7° REF. 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88558 Revision: 05-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000