AP9585GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Lower Gate Charge D D G SO-8 S S -80V RDS(ON) 180mΩ ID ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -2.7A S Description AP9585 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Drain Current, VGS @ 10V 3 Drain Current, VGS @ 10V 3 1 Rating Units -80 V +20 V -2.7 A -2.1 A -20 A IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 ℃/W 1 201501122 AP9585GM-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -80 - - V VGS=-10V, ID=-2.7A - - 180 mΩ VGS=-4.5V, ID=-2.5A - - 200 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-2.7A - 5 - S IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-64V, VGS=0V - - -25 uA Gate-Source Leakage - - +100 nA o IGSS VGS=+20V, VDS=0V Qg Total Gate Charge ID=-2.7A - 18 28 nC Qgs Gate-Source Charge VDS=-64V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 7 - nC td(on) Turn-on Delay Time VDS=-40V - 10 - ns tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 67 - ns tf Fall Time RD=40Ω - 30 - ns Ciss Input Capacitance VGS=0V - 1790 2860 pF Coss Output Capacitance VDS=-25V - 140 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 98 - pF Min. Typ. IS=-2A, VGS=0V - - -1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-2.7A, VGS=0V, - 80 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 320 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 ; 125 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9585GM-HF 30 40 -10V -6.0V -5.0V -4.5V -ID , Drain Current (A) 35 30 -10V -6.0V -5.0V -4.5V TA=150oC 25 -ID , Drain Current (A) o T A = 25 C 25 20 15 V G = -3.0 V 20 15 V G = -3.0 V 10 10 5 5 0 0 0 4 8 12 16 20 0 Fig 1. Typical Output Characteristics 4 6 8 10 12 14 Fig 2. Typical Output Characteristics 150 2.2 2.0 I D = -2.5 A T A =25 ℃ I D = -2.7 A V G =-10V 1.8 Normalized RDS(ON) 145 RDS(ON) (mΩ ) 2 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 140 135 1.6 1.4 1.2 1.0 0.8 130 0.6 0.4 125 3 4 5 6 7 8 9 10 11 -50 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 6 2.5 2 T j =150 o C -VGS(th) (V) -IS(A) 4 T j =25 o C 1.5 1 2 0.5 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9585GM-HF f=1.0MHz 10000 I D = -2.7A V DS = -64V 8 C iss 1000 6 C (pF) -VGS , Gate to Source Voltage (V) 10 C oss C rss 4 100 2 0 10 0 10 20 30 40 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thja) Duty factor=0.5 10 -ID (A) 100us 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC 0.01 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W 0.001 0.1 1 10 100 1000 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9585GM-HF MARKING INFORMATION Part Number 9585GM YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5