EMD12 / UMD12N Transistors Power management (dual digital transistors) EMD12 / UMD12N zFeatures 1) Both the DTA144E and DTC144E in a EMT or UMT package. 0.22 (5) (2) (1) (1) 0.5 zEquivalent circuit R1 (2) 1.2 1.6 0.13 (6) (3) (3) (4) 0.5 0.5 1.0 1.6 EMD12 ROHM : EMT6 Each lead has same dimensions R2 DTr1 1.3 2.0 (3) (2) 1.25 0.65 R1=47kΩ R2=47kΩ (1) (6) (6) (5) (5) R1 0.2 (4) (4) R2 0.65 UMD12N DTr2 Type 0.1Min. UMD12N EMD12 Package EMT6 UMT6 Marking D12 D12 Code T2R TR Basic ordering unit (pieces) 8000 3000 ROHM : UMT6 EIAJ : SC-88 0~0.1 0.9 zPackage, marking, and packaging specifications 0.7 0.15 2.1 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol VCC VIN Input voltage Output current Power dissipation Unit V Limits 50 40 V −10 IC 100 IO 30 Pd 150(TOTAL) mA mA mW ∗1 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 120mW per element must not be exceeded. PNP type negative symbols have been omitted zExternal dimensions (Units : mm) zElectrical characteristics (Ta=25°C) Parameter Input voltage Symbol Min. Typ. Max. Unit VI (off) − − 0.5 V VCC=5/−5V, IO=100/−100µA VO=0.3/−0.3V, IO=2/−2mA VI (on) 3 − − V Output voltage Input current VO (on) II − − 0.1 − 0.3 0.18 V mA Output current IO (off) − − 0.5 µA DC current gain GI 68 − − − Transition frequency Input resistance fT R1 − 32.9 250 47 − 61.1 MHz kΩ R2 / R1 0.8 1 1.2 − Resistance ratio ∗Transition frequency of the device. Conditions IO=10/−10mA, II=0.5/−0.5mA VI=5/−5V VCC=50/−50V, VI=0V IO=5/−5mA, VO=5/−5V VCE=10/−10V, IE=−5/5mA, f=100MHz ∗ − − PNP type negative symbols have been omitted Rev.A 1/3 EMD12 / UMD12N Transistors zElectrical characteristics curves DTr1 (DTC144E) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) 2m Ta=100°C 25°C 1m −40°C 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VO=5V 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 2/3 EMD12 / UMD12N Transistors zElectrical characteristics curves DTr2 (DTA144E) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) 2m Ta=100°C 25°C 1m −40°C 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VO=5V 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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